MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9014C-TS01 Features * * * * * * TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9014 NPN Silicon Transistors TO-92 A C E BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 50 --- Vdc 45 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc B OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=50Vdc, IE =0) Collector Cutoff Current (VCE =35Vdc, IB =0) Emitter Cutoff Current (VEB =3.0Vdc, IC=0) C D ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain (IC=1.0mAdc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) 300 400 --- --- 0.3 Vdc --- 1.0 Vdc G SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=10mAdc, VCE=5.0Vdc, f=30MHz) DIMENSIONS 150 --- MHz INCHES DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com Revision: 2 2003/04/30