© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 76 A
IDM TC= 25C, Pulse Width Limited by TJM 204 A
IATC= 25C25A
EAS TC= 25C3J
PDTC= 25C 595 W
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
IISOL 1mA, t = 1s 3000 V~
MdMounting Torque for Base Plate 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 650 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS= 0V 25 A
TJ = 125C 350 A
RDS(on) VGS = 10V, ID = 51A, Note 1 30 m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTN102N65X2 VDSS = 650V
ID25 = 76A
RDS(on)
30m
DS100669(6/15)
X2-Class
Power MOSFET
Features
International Standard Package
miniBLOC with Aluminum Nitride
Isolation
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Advance Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN102N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 102 A
ISM Repetitive, Pulse Width Limited by TJM 408 A
VSD IF = IS , VGS = 0V, Note 1 1.4 V
trr 450 ns
QRM 11.7 μC
IRM 52 A
IF = 51A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 51A, Note 1 50 82 S
RGi Gate Input Resistance 0.7
Ciss 10.9 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 6100 pF
Crss 12.6 pF
Co(er) 367 pF
Co(tr) 1420 pF
td(on) 37 ns
tr 28 ns
td(off) 67 ns
tf 11 ns
Qg(on) 152 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 51A 57 nC
Qgd 33 nC
RthJC 0.21 C/W
RthCS 0.05 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 51A
RG = 2(External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
(M4 screws (4x) supplied)
SOT-227B (IXTN) Outline
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2015 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics @ T
J
= 2 5ºC
0
10
20
30
40
50
60
70
80
90
100
110
00.511.522.533.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
110
0123456789
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
4V
Fig. 4. R
DS(on)
No rmalized to I
D
= 51A Value vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150
T
J
- D egr ees Centi grade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 102A
I
D
= 51A
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
8V
Fig. 5. R
DS(on)
No rmalized t o I
D
= 51A Value vs.
Dra in Curr ent
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 40 80 120 160 200 240
I
D
- Amperes
R
DS(on)
- Normalized
VGS
= 10V
TJ = 125º C
TJ = 25ºC
Fig. 6. Maximum Drain Current v s .
Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTN102N65X2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN102N65X2
Fig. 7. Input Admittanc e
0
20
40
60
80
100
120
140
160
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160
I
D
- A m peres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 51A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Output Capacitance Stored Energy
0
10
20
30
40
50
60
70
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoul es
© 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_102N65X2(X8-R4T50) 6-16-15-A
Fig. 14. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Secon ds
Z
(th)JC
- ºC / W
Fig. 13. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pu lse
25µs
1ms
10ms
100µs
R
DS(
on
)
Limit
DC
IXTN102N65X2
