Semiconductor Group 1
NPN Silicon AF Transistors BC 846
... BC 850
Type Marking Package1)
Pin Configuration
BC 846 A
BC 846 B
BC 847 A
BC 847 B
BC 847 C
BC 848 A
BC 848 B
BC 848 C
BC 849 B
BC 849 C
BC 850 B
BC 850 C
Q62702-C1772
Q62702-C1746
Q62702-C1884
Q62702-C1687
Q62702-C1715
Q62702-C1741
Q62702-C1704
Q62702-C1506
Q62702-C1727
Q62702-C1713
Q62702-C1885
Q62702-C1712
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
SOT-23
123
Ordering Code
(tape and reel)
B E C
1) For detailed information see chapter Package Outlines.
●
For AF input stages and driver applications
●
High current gain
●
Low collector-emitter saturation voltage
●
Low noise between 30 Hz and 15 kHz
●
Complementary types: BC 856, BC 857,
BC 859, BC 860 (PNP)
07.94
Semiconductor Group 2
BC 846
... BC 850
Maximum Ratings
Parameter Symbol BC 846 Unit
Collector-emitter voltage VCE0 65 V
Collector-base voltage VCB0 80
Emitter-base voltage VEB0
Collector current ICmA
Peak emitter current IEM
Total power dissipation, TS = 71 ˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient1) Rth JA ≤ 310 K/W
Peak collector current ICM
Peak base current IBM
BC 847
BC 850
45
50
100
200
330
150
200
200
Values BC 848
BC 849
30
30
Collector-emitter voltage VCES 80 50 30
665
Junction - soldering point Rth JS ≤ 240
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 3
BC 846
... BC 850
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
IC = 10 mA BC 846
BC 847, BC 850
BC 848, BC 849
V(BR)CE0 65
45
30
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0 –
––
–15
5
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 10 µA BC 846
BC 847, BC 850
BC 848, BC 849
V(BR)CB0 80
50
30
–
–
–
–
–
–
Emitter-base breakdown voltage
IE = 1 µA BC 846, BC 847
BC 848, BC 849, BC 850
V(BR)EB0 6
5–
––
–
mV
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat –
–90
200 250
600
–DC current gain
IC = 10 µA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
IC = 2 mA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
hFE
–
–
–
110
200
420
140
250
480
180
290
520
–
–
–
220
450
800
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat –
–700
900 –
–
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 BC 846
BC 847, BC 850
BC 848, BC 849
V(BR)CES 80
50
30
–
–
–
–
–
–
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on) 580
–660
–700
770
1) Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group 4
BC 846
... BC 850
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
UnitValuesParameter Symbol
min. typ. max.
MHzTransition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz fT– 250 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –3–
Input capacitance
VCB = 0.5 V, f = 1 MHz Cibo –8–
kΩShort-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h11e
–
–
–
2.7
4.5
8.7
–
–
–
dBNoise figure
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 30 Hz … 15 kHz BC 849
BC 850
f = 1 kHz, ∆ f = 200 Hz BC 849
BC 850
F
–
–
–
–
1.4
1.4
1.2
1.0
4
3
4
4
10– 4
Open-circuit reverse voltage transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h12e
–
–
–
1.5
2.0
3.0
–
–
––Short-circuit forward current transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h21e
–
–
–
200
330
600
–
–
–
µSOpen-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
BC 846 B … BC 850 B
BC 847 C … BC 850 C
h22e
–
–
–
18
30
60
–
–
–
µVEquivalent noise voltage
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 10 Hz … 50 Hz BC 850
Vn– – 0.135
Semiconductor Group 5
BC 846
... BC 850
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group 6
BC 846
... BC 850
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
DC current gain hFE = f (IC)
VCE = 5 V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
Semiconductor Group 7
BC 846
... BC 850
h parameter he = f (IC)
VCE = 5 V
Noise figure F = f (VCE)
IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
h parameter he = f (VCE)
IC = 2 mA
Noise figure F = f (f)
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
Semiconductor Group 8
BC 846
... BC 850
Noise figure F = f (IC)
VCE = 5 V, f = 120 Hz
Noise figure F = f (IC)
VCE = 5 V, f = 10 kHz
Noise figure F = f (IC)
VCE = 5 V, f = 1 kHz
Semiconductor Group 1
PNP Silicon AF Transistors BC 856
... BC 860
Type Marking Package1)
Pin Configuration
BC 856 A
BC 856 B
BC 857 A
BC 857 B
BC 857 C
BC 858 A
BC 858 B
BC 858 C
BC 859 A
BC 859 B
BC 859 C
BC 860 B
BC 860 C
Q62702-C1773
Q62702-C1886
Q62702-C1850
Q62702-C1688
Q62702-C1851
Q62702-C1742
Q62702-C1698
Q62702-C1507
Q62702-C1887
Q62702-C1774
Q62702-C1761
Q62702-C1888
Q62702-C1889
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
SOT-23
123
Ordering Code
(tape and reel)
B E C
1) For detailed information see chapter Package Outlines.
●
For AF input stages and driver applications
●
High current gain
●
Low collector-emitter saturation voltage
●
Low noise between 30 Hz and 15 kHz
●
Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
07.94
Semiconductor Group 2
BC 856
... BC 860
Maximum Ratings
Parameter Symbol BC 856 Unit
Collector-emitter voltage VCE0 65 V
Collector-base voltage VCB0 80
Emitter-base voltage VEB0
Collector current ICmA
Peak emitter current IEM
Total power dissipation, TS = 71 ˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient1) Rth JA ≤ 310 K/W
Peak collector current ICM
Peak base current IBM
BC 857
BC 860
45
50
100
200
330
150
200
200
Values BC 858
BC 859
30
30
Collector-emitter voltage VCES 80 50 30
555
Junction - soldering point Rth JS ≤ 240
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 3
BC 856
... BC 860
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
IC = 10 mA BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CE0 65
45
30
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0 –
–1
–15
4
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 10 µA BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CB0 80
50
30
–
–
–
–
–
–
Emitter-base breakdown voltage
IE = 1 µAV(BR)EB0 5––
mV
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat –
–75
250 300
650
–DC current gain
IC = 10 µA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
IC = 2 mA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
hFE
–
–
–
125
220
420
140
250
480
180
290
520
–
–
–
250
475
800
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat –
–700
850 –
–
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CES 80
50
30
–
–
–
–
–
–
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on) 600
–650
–750
820
1) Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group 4
BC 856
... BC 860
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
UnitValuesParameter Symbol
min. typ. max.
MHzTransition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz fT– 250 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –3–
Input capacitance
VCB = 0.5 V, f = 1 MHz Cibo –8–
kΩShort-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h11e
–
–
–
2.7
4.5
8.7
–
–
–
dBNoise figure
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 30 Hz … 15 kHz BC 859
BC 860
f = 1 kHz, ∆ f = 200 Hz BC 859
BC 860
F
–
–
–
–
1.2
1.0
1.0
1.0
4
3
4
4
10– 4
Open-circuit reverse voltage transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h12e
–
–
–
1.5
2.0
3.0
–
–
––Short-circuit forward current transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h21e
–
–
–
200
330
600
–
–
–
µSOpen-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
h22e
–
–
–
18
30
60
–
–
–
µVEquivalent noise voltage
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 10 Hz … 50 Hz BC 860
Vn– – 0.110
Semiconductor Group 5
BC 856
... BC 860
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group 6
BC 856
... BC 860
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
DC current gain hFE = f (IC)
VCE = 5 V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
Semiconductor Group 7
BC 856
... BC 860
h parameter he = f (IC)
VCE = 5 V
Noise figure F = f (VCE)
IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
h parameter he = f (VCE)
IC = 2 mA
Noise figure F = f (f)
IC = 0.2 mA, RS = 2 kΩ, VCE = 5 V
Semiconductor Group 8
BC 856
... BC 860
Noise figure F = f (IC)
VCE = 5 V, f = 120 Hz
Noise figure F = f (IC)
VCE = 5 V, f = 10 kHz
Noise figure F = f (IC)
VCE = 5 V, f = 1 kHz
