NPN Silicon AF Transistors BC 846 ... BC 850 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code (tape and reel) BC 846 A BC 846 B BC 847 A BC 847 B BC 847 C BC 848 A BC 848 B BC 848 C BC 849 B BC 849 C BC 850 B BC 850 C 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 Q62702-C1885 Q62702-C1712 1) Pin Configuration 1 2 3 B E C Package1) SOT-23 For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BC 846 ... BC 850 Maximum Ratings Parameter Symbol Unit BC 846 Values BC 847 BC 850 BC 848 BC 849 Collector-emitter voltage VCE0 65 45 30 V Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEB0 6 6 5 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 C Ptot 330 mW Junction temperature Tj 150 C Storage temperature range Tstg mA - 65 ... + 150 Thermal Resistance Junction - ambient1) Rth JA 310 Junction - soldering point Rth JS 240 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BC 846 ... BC 850 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage BC 846 IC = 10 mA BC 847, BC 850 BC 848, BC 849 V(BR)CE0 Collector-base breakdown voltage IC = 10 A BC 846 BC 847, BC 850 BC 848, BC 849 V(BR)CB0 Collector-emitter breakdown voltage BC 846 IC = 10 A, VBE = 0 BC 847, BC 850 BC 848, BC 849 V(BR)CES Emitter-base breakdown voltage BC 846, BC 847 IE = 1 A BC 848, BC 849, BC 850 V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C ICB0 DC current gain IC = 10 A, VCE = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B ... BC 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C IC = 2 mA, VCE = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B ... BC 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(on) 1) Pulse test: t 300 s, D = 2 %. Semiconductor Group 3 V 65 45 30 - - - - - - 80 50 30 - - - - - - 80 50 30 - - - - - - 6 5 - - - - - - - - 15 5 nA A - - - - 140 250 480 - - - 110 200 420 180 290 520 220 450 800 - - 90 200 250 600 - - 700 900 - - 580 - 660 - 700 770 mV BC 846 ... BC 850 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT - 250 - MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo - 3 - pF Input capacitance VCB = 0.5 V, f = 1 MHz Cibo - 8 - Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C h11e Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C h12e Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C h22e Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 30 Hz ... 15 kHz BC 849 BC 850 BC 849 f = 1 kHz, f = 200 Hz BC 850 F Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 10 Hz ... 50 Hz BC 850 Vn Semiconductor Group k - - - - - - 10- 4 - - - 1.5 2.0 3.0 - - - - - - - 200 330 600 - - - S - - - 4 2.7 4.5 8.7 18 30 60 - - - dB - - - - 1.4 1.4 1.2 1.0 4 3 4 4 - - 0.135 V BC 846 ... BC 850 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 846 ... BC 850 Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 846 ... BC 850 h parameter he = f (IC) VCE = 5 V h parameter he = f (VCE) IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 k, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, VCE = 5 V, RS = 2 k Semiconductor Group 7 BC 846 ... BC 850 Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8 PNP Silicon AF Transistors BC 856 ... BC 860 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type Marking Ordering Code (tape and reel) BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889 1) Pin Configuration 1 2 3 B E C Package1) SOT-23 For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BC 856 ... BC 860 Maximum Ratings Parameter Symbol Unit BC 856 Values BC 857 BC 860 BC 858 BC 859 Collector-emitter voltage VCE0 65 45 30 Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEB0 5 5 5 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 C Ptot 330 mW Junction temperature Tj 150 C Storage temperature range Tstg V mA - 65 ... + 150 Thermal Resistance Junction - ambient1) Rth JA 310 Junction - soldering point Rth JS 240 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BC 856 ... BC 860 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 65 45 30 - - - - - - 80 50 30 - - - - - - 80 50 30 - - - - - - 5 - - - - 1 - 15 4 DC characteristics Collector-emitter breakdown voltage BC 856 IC = 10 mA BC 857, BC 860 BC 858, BC 859 V(BR)CE0 Collector-base breakdown voltage IC = 10 A BC 856 BC 857, BC 860 BC 858, BC 859 V(BR)CB0 Collector-emitter breakdown voltage BC 856 IC = 10 A, VBE = 0 BC 857, BC 860 BC 858, BC 859 V(BR)CES Emitter-base breakdown voltage IE = 1 A V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C ICB0 DC current gain IC = 10 A, VCE = 5 V BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C IC = 2 mA, VCE = 5 V BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(on) 1) Pulse test: t 300 s, D = 2 %. Semiconductor Group 3 V nA A - - - - 140 250 480 - - - 125 220 420 180 290 520 250 475 800 - - 75 250 300 650 - - 700 850 - - 600 - 650 - 750 820 mV BC 856 ... BC 860 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT - 250 - MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo - 3 - pF Input capacitance VCB = 0.5 V, f = 1 MHz Cibo - 8 - Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C h11e Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C h12e Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A ... BC 859 A BC 856 B ... BC 860 B BC 857 C ... BC 860 C h22e Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 30 Hz ... 15 kHz BC 859 BC 860 BC 859 f = 1 kHz, f = 200 Hz BC 860 F Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 10 Hz ... 50 Hz BC 860 Vn Semiconductor Group k - - - - - - 10- 4 - - - 1.5 2.0 3.0 - - - - - - - 200 330 600 - - - S - - - 4 2.7 4.5 8.7 18 30 60 - - - dB - - - - 1.2 1.0 1.0 1.0 4 3 4 4 - - 0.110 V BC 856 ... BC 860 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 856 ... BC 860 Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 856 ... BC 860 h parameter he = f (IC) VCE = 5 V h parameter he = f (VCE) IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 k, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, RS = 2 k, VCE = 5 V Semiconductor Group 7 BC 856 ... BC 860 Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8