Datasheet Rev. 1.4 1 2013-02-12
Smart Low Side Power Switch
HITFET® BTS3408G
Datasheet Rev. 1.4
Features
• Logic level input
• Compatible to 3V micro controllers
• ESD protection
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Over voltage protection
• Open load detection (during Off)
• Current limitation
• Direct parallel control of the inputs
• FREEZE functionality for multiplexing
• General fault flag
• Very low standby quiescent current
• Switching frequencies up to 50kHz
• Green Product (RoHS compliant)
• AEC Qualified
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V, 24 V and 42 V applications
• Replaces electromechanical relays and discrete circuits
• Line, stepper motor, lamp and relay driver
General Description
The BTS3408G is a dual channel Low-Side Switch with D-MOS output stages for driving
resistive, capacitive and inductive loads. The design is based on Infineons Smart Power
Technology (SPT) which allows bipolar, CMOS and power D-MOS devices on the same
monolithic circuit.
The BTS3408G is protected by embedded protection functions and designed for
automotive and industrial applications. It is especially suited for driving stepper motors
and lines.
Type Ordering Code Package
HITFET® BTS3408G on request PG-DSO-8-36
Datasheet Rev. 1.4 2 2013-02-12
HITFET® BTS3408G
Figure 1 Block Diagram
Figure 2 Pin Configuration
Product Summary
Parameter Symbol Value Unit
Supply voltage VS4.5 - 60 V
Continuous drain source voltage VDS 60 V
On-state resistance RDS(ON) 550 mΩ
Current limitation ID(lim) 1A
Nominal output current (individual channel) ID(Nom) 0.55 A
Clamping energy EAS 800 mJ
BTS 3408
Logic
OUT2
OUTPUT Stage
Protection
Open Load @ OFF
Short Circuit
Over Temp
Normal Function
VS
Protection
and
Diagnosis
Control
Output
Control
Freeze
functio-
nality
Open Drain
Status
Feedback
FAULT
GND
OUT1
IN1
IN2
ENA
V
bb
LOAD
1
FAULT
IN1
IN2
ENA
V
S
OUT1
GND
OUT2
2
3
4
8
7
6
5
Datasheet Rev. 1.4 3 2013-02-12
HITFET® BTS3408G
Pin Definitions and Functions
Pin Symbol Function
1FAULTGeneral Fault Flag; see Table 2 for operation mode.
2IN1Input 1; input of channel 1; has an internal pull down; TTL/
CMOS compatible input.
3IN2Input 2; input of channel 2; has an internal pull down; TTL/
CMOS compatible input.
4ENAEnable/Freeze; has an internal pull down; device is enabled
when voltage is higher then 1.2 volts; if the voltage is below 1.7
volts the output is freezed, input signals will be ignored; if the
voltage is above 2 volts input signals will be output ; see Table 1
for detailed information.
5OUT2Output 2; output of D-MOS stage 2.
6GNDGround.
7OUT1Output 1; output of D-MOS stage 1.
8VSPower supply.
Datasheet Rev. 1.4 4 2013-02-12
HITFET® BTS3408G
Circuit Description
Logic Supply
The logic is supplied with 4.5 up to 60 volt by the VS pin. If VS falls below max. 4.5 volts
the logic is shut down and the output stages are switched off.
Direct Inputs
ENA
The ENA/FREEZE input can be used to enable and/or to freeze the output control of the
IC or to cut off the complete IC.
By pulling the ENA input to low, i.e. applying a voltage VENAL , the IC is in disable mode.
The power stages are switched off and the current consumption is reduced to IS(stby).
By applying a voltage VENAFZ , the IC is in FREEZE mode. The output signals will remain
in their former state. All input signals will be ignored.
By pulling the input to high, the IC is in Enable mode. All input signals are output.
The ENA - pin has an internal pull-down.
IN1 / IN2
Each output is independently controlled via the respective input pin. The input pins are
high active. If the common enable pin is high, the individual input signals are output. The
input pins have an internal pull-down.
Table 1 Functional Table
VENA Mode IN1 IN2 IN1(-1) IN2(-1) OUT1 OUT2 Comment
≤0.8V Disable X 1)
1) X = not relevant
X 1) X 1) X 1) L L all outputs OFF
1.2 .. 1.7V Freeze X 1) X 1) L L L L former output state
1.2 .. 1.7V Freeze X 1) X 1) L H L H former output state
1.2 .. 1.7V Freeze X 1) X 1) H L H L former output state
1.2 .. 1.7V Freeze X 1) X 1) H H H H former output state
≥2.0V Enable L L X 1) X 1) L L input is output
≥2.0V Enable L H X 1) X 1) L H input is output
≥2.0V Enable H L X 1) X 1) H L input is output
≥2.0V Enable H H X 1) X 1) H H input is output
Datasheet Rev. 1.4 5 2013-02-12
HITFET® BTS3408G
Power stages
Each output is protected by embedded protection functions. In the event of an overload
or short to supply, the current is internally limited. The current limit is set to ID(lim). If this
operation leads to an overtemperature condition, a second protection level (about 165
°C) will turn the effected output into a PWM-mode (selective thermal shutdown with
restart) to prevent critical chip temperatures. The temperature hysteresis is typically 10K.
Zener clamping is implemented to limit voltages at the power transistors when inductive
loads are switched off.
Diagnostic
The general FAULT pin is an open drain output. The FAULT pin is low active. It signals
fault conditions of any of the two output stages. By doing so, single and/or dual fault
conditions can be monitored. Single fault conditions can be assigned.
Fault Distinction
Open load / short to ground is recognized during OFF-state. Overtemperature as a result
of an overload or short to battery can only arise during ON-state. If there is only one fault
at a time, it is possible to distinguish which channel is affected with which fault.
Table 2 Diagnostic Table
Operating Condition ENA INXOUTXFAULT
Standby L X 1)
1) X = not relevant
OFF H
Normal function H H ON H
Over temperature H H OFF 2)
2) selective thermal shutdown for each channel at overtemperature
L
Open load / short to ground H L OFF L
Datasheet Rev. 1.4 6 2013-02-12
HITFET® BTS3408G
Absolute Maximum Ratings 1)
Tj = -40°C to 150°C, unless otherwise specified
Parameter Symbol Values Unit Remarks
Supply voltage VS+4.5 .. +60 V –
Drain source voltage (OUT1, OUT2) VDS -0.3 .. +60 V –
Input voltage (IN1, IN2, ENA) VIN -0.3 … +7 V –
Continuous input current VIN>7V IIN 1mA–
FAULT output voltage VFault -0.3 … +7 V –
Operating temperature range
Storage temperature range
Tj
Tstg
-40 … +150
-55 … +150
°C
°C
–
Power dissipation (DC) 2) Ptot 0.88 W Ta = 25°C
Nominal load current 2)
one channel active
both channel active
ID(Nom) 0.55
0.45
AVDS≤0.5V,
Tj≤150°C,
TA=85°C,
VIN=5V
Unclamped single pulse inductive energy
one channel active
EAS 800 mJ ID=0.7A,
Tj(start)=25°C
Electrostatic discharge voltage (Human
Body Model)
according to ANSI/ESDA/JEDEC JS-001
(1.5 kΩ, 100 pF)
VESD 2000 V –
Thermal Resistance
Junction soldering point RthJS ≤ 10 K/W –
Junction - ambient @ min. footprint
Junction - ambient @ 6cm² cooling area 2) RthJA ≤ 185
≤ 142
K/W –
1) Not subject to production test, specified by design. Stresses above those listed here may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
2) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.
Datasheet Rev. 1.4 7 2013-02-12
HITFET® BTS3408G
Electrical Characteristics
VS = 4.5V to 18V; Tj = -40°C to 150°C; unless otherwise specified
Parameter Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
Power supply
Supply voltage VS4.5 – 60 V –
Supply current in enable mode IS(ON) – 1.5 4 mA ENA=High,
OUT1=OUT2=On
Supply current in standby mode 1) IS(stby) ––16μAENA=Low
Power outputs
Drain source clamp voltage VDS(AZ) 60 – 75 V ID = 1 mA
Output leakage current 2) IDSS –15μAENA=Low,
IN=Low,
VDS = 60 V
Output pull down current IPD(OL) 50 100 200 μA ENA=High,
IN=Low,
VDS = 42 V
On-state resistance
Tj = 25 °C
Tj = 150 °C
RDS(ON)–
–
480
800
550
1000
mΩID = 0.2 A,
VS = 5 V
Inverse diode forward voltage -VDS1,
-VDS2
–0.81.1VID = -0.2 A,
IN, ENA = 0V (low)
Current limit ID(lim) 11.52A–
Turn-on time IN=High to 90% ID:ton –28μsRL= 22Ω,
VBB=12V,VS=5V
Turn-off time IN=Low to 10% ID:toff –28μsRL= 22Ω,
VBB=12V,VS=5V
Digital inputs (IN1, IN2, ENA)
Input ’Low’ voltage
IN1, IN2:
ENA: VINL
VENAL
-0.3
-0.3
–
–
0.8
0.8
V–
ENA voltage for ’FREEZE’
functionality
VENAFZ 1.2 – 1.7 V –
Datasheet Rev. 1.4 8 2013-02-12
HITFET® BTS3408G
Input ’High’ voltage
IN1, IN2:
ENA: VINH
VENAH
2.0
2.0
–
–
–
–
V–
Input voltage hysteresis VINhys –300–mV–
Input pull down current
IN1, IN2:
ENA: IINPD
IENAPD
20
20
50
50
100
100
μA–
Digital Output (FAULT)
Output ’Low’ voltage VFLTL ––0.4VIFLTL=1.6mA,
Diagnostic Functions
Open load / short to ground
detection voltage
VDS(OL) 0.5*VS0.7*VS0.9*VSV–
Fault filter time for open load tfilter(OL) 30 100 200 μsVS=5V
Protection Functions 3)
Thermal overload trip
temperature
Tjt 150 165 180 °C–
Thermal hysteresis
Δ
Tjt –10–Κ–
Unclamped single pulse inductive
energy
one channel active,Tj(start)=25°C
both channel active,Tj(start)=25°C
one channel active,Tj(start)=150°C
both channel active,Tj(start)=150°C
EAS
800
550
240
240
mJ ID=0.7 A
1) See also diagram 4 on page 11.
2) See also diagram 5 on page 11.
3) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation. Not subject to production test, specified by design.
Electrical Characteristics (cont’d)
VS = 4.5V to 18V; Tj = -40°C to 150°C; unless otherwise specified
Parameter Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
HITFET® BTS3408G
Datasheet Rev. 1.4 9 2013-02-12
Terms
Figure 3 Input circuit
(ESD protection)
ESD zener diodes are not designed for DC
current.
Figure 4 Inductive and over
voltage output clamp
Figure 5 Application Circuit
I
IN1
V
FLT
I
S
OUT2
VS
FAULT
GND
OUT1
IN1
IN2
ENA
V
IN1
V
S
V
IN2
V
ENA
V
DS2
V
DS1
I
D1
I
D2
I
IN2
I
ENA
V
BB
I
FLT
Source
Drain
V
DS
I
D
V
AZ
Power
DMOS
LOAD
3408
OUT2
VS
FAULT
GND
OUT1
IN1
IN2
ENA
V
BB
uC
V
cc
GND
INT
Px.1
Px.2
Py.1 line
HITFET® BTS3408G
Datasheet Rev. 1.4 10 2013-02-12
Timing diagrams
Figure 6 Switching a resistive load
Figure 7 Switching an inductive
load
Figure 8 Short circuit
Characteristics
1. Max. allowable Power Dissipation
Ptot = f(Tamb)
2. On-state Resistance RDS(ON) = f(Tj);
ID = 0.2 A; VS = 5 V
t
V
DSx
t
I
Dx
t
on
t
off
IN
x
ENA
0.9*I
D
0.1*I
D
t
V
DSx
IN
x
t
I
Dx
V
BB
V
DS(AZ)
ENA
t
ϑ
jx
I
Dx
IN
x
ENA
t
FAULT
thermal hysteresis
°C
°C
HITFET® BTS3408G
Datasheet Rev. 1.4 11 2013-02-12
3. Typ. Short Circuit Current
ID(lim) = f(Tj)
4. Typ. Supply current in Standby mode
IS(stby) = f(Tj);VS = 5 V
5. Typ. Output leakage current
IDSS = f(Tj);VS = 18 V; VDS = 60 V
A
°C
A
°C
A
°C
HITFET® BTS3408G
Datasheet Rev. 1.4 12 2013-02-12
Package Outline
Figure 9 PG-DSO-8-36 (Plastic
Green Dual Small Outline
Package)
Green Product (RoHS compliant)
To meet the world-wide customer
requirements for environmentally friendly
products and to be compliant with
government regulations the device is
available as a green product. Green
products are RoHS-Compliant (i.e Pb-free
finish on leads and suitable for Pb-free
soldering according to IPC/JEDEC
J-STD-020).
+0.06
0.19
0.35 x 45˚
1)
-0.2
4C
8 MAX.
0.64
±0.2
6
±0.25
0.2 8x
M
C
1.27
+0.1
0.41 0.2
M
A
-0.06
1.75 MAX.
(1.45)
±0.07
0.175
B
8x
B
2)
Index Marking
5
-0.21)
41
85
A
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
GPS01181
0.1
ubes, trays etc. are contained in our
Device
Datasheet Rev. 1.4 13 2013-02-12
HITFET® BTS3408G
Revision History
Version Date Changes
Rev. 1.4 2013-02-12 minor updates in wording/spelling;
updated table foot note of Maximum Ratings and Protection
Functions - added: “not subject to production test..”
updated reference of ESD standard;
removed chapter “EMC characteristics”;
updated test condition for parameter ton and toff;
added parameter “Inverse diode forward voltage”;
Rev. 1.3 2008-01-09 Changed package outline drawing, updated package name
Rev. 1.2 2007-06-15 Released automotive green version
Package parameter (humidity and climatic) removed in
Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
AEC Stress Test Qualification added to the feature list
Package information updated to green
Green explanation added
removed order number
Rev. 1.1 2005-10-10 Released production version
Datasheet Rev. 1.4 14 2013-02-12
HITFET® BTS3408G
Edition 2013-02-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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