TIP112G - ON Semiconductor L.L.C. - Datasheet.Technology

September, 2011 − Rev. 7

1Publication Order Number:

TIP110/D

TIP110, TIP111, TIP112

(NPN); TIP115, TIP116,

TIP117 (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

•High DC Current Gain −

hFE = 2500 (Typ) @ IC

= 1.0 Adc

•Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115

= 80 Vdc (Min) − TIP111, TIP116

= 100 Vdc (Min) − TIP112, TIP117

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.5 Vdc (Max) @ IC

= 2.0 Adc

•Monolithic Construction with Built−in Base−Emitter Shunt Resistors

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 50 WATTS

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123

TIP11x = Device Code

x = 0, 1, 2, 5, 6, or 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

TIP11xG

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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MAXIMUM RATINGS

Rating Symbol

TIP110,

TIP115

TIP111,

TIP116

TIP112,

TIP117 Unit

Collector−Emitter Voltage VCEO 60 80 100 Vdc

Collector−Base Voltage VCB 60 80 100 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current −Continuous

−Peak

IC2.0

4.0

Adc

Base Current IB50 mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD50

0.4

W/°C

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD2.0

0.016

W/°C

Unclamped Inductive Load Energy − Figure 13 E 25 mJ

Operating and Storage Junction TJ, Tstg –65 to +150 °C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0) TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP110, TIP115

(VCE = 40 Vdc, IB = 0) TIP111, TIP116

(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117

ICEO

−

2.0

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP110, TIP115

(VCB = 80 Vdc, IE = 0) TIP111, TIP116

(VCB = 100 Vdc, IE = 0) TIP112, TIP117

ICBO

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO −2.0 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

hFE

1000

500

−

Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) −2.5 Vdc

Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) −2.8 Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − −

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

Cob

−

200

100

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

ORDERING INFORMATION

Device Package Shipping

TIP110 TO−220 50 Units / Rail

TIP110G TO−220

(Pb−Free)

50 Units / Rail

TIP111 TO−220 50 Units / Rail

TIP111G TO−220

(Pb−Free)

50 Units / Rail

TIP112 TO−220 50 Units / Rail

TIP112G TO−220

(Pb−Free)

50 Units / Rail

TIP115 TO−220 50 Units / Rail

TIP115G TO−220

(Pb−Free)

50 Units / Rail

TIP116 TO−220 50 Units / Rail

TIP116G TO−220

(Pb−Free)

50 Units / Rail

TIP117 TO−220 50 Units / Rail

TIP117G TO−220

(Pb−Free)

50 Units / Rail

00 20 40 60 80 100 120 160

Figure 2. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

2.0

1.0

3.0

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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Figure 3. Switching Times Test Circuit

4.0

0.04

Figure 4. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.8

0.2

0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

0.6

PNP

NPN

td @ VBE(off) = 0

approx

+8.0 V

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

51 D1

+4.0 V

VCC

-30 V

TUT

≈ 8.0 k ≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25°C

Figure 5. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC(t) = r(t) RqJC

RqJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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1.0

Figure 6. TIP115, 116, 117

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1

10 60 80 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

IC, COLLECTOR CURRENT (AMPS)

TJ = 150°Cdc

1ms

TIP115

TIP116

TIP117

SECONDARY BREAKDOWN LIMITED

5ms

CURVES APPLY BELOW

RATED VCEO

1.0

Figure 7. TIP110, 111, 112

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1 10 80 100

IC, COLLECTOR CURRENT (AMPS)

TIP110

TIP111

TIP112

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

ACTIVE−REGION SAFE−OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 6 and 7 is based on TJ(pk) = 150°C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150°C. TJ(pk) may be calculated from the data in Figure 5.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

C, CAPACITANCE (pF)

TC = 25°C

Cib

Cob

PNP

NPN

Figure 8. Capacitance

100

6.0 10 20

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

6.0 k

0.04

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4

NPN

TIP110, 111, 112

PNP

TIP115, 116, 117

Figure 10. Collector Saturation Region

3.4

0.1

IB, BASE CURRENT (mA)

0.6

0.2 1.0 2.0 20 100

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0

2.2

0.04

IC, COLLECTOR CURRENT (AMP)

0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 11. “On” Voltages

VBE @ VCE = 3.0 V

4.0 k

3.0 k

TJ = 125°C

25°C

-55°C

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 125°C

25°C

-55°C

1.4

2.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

2.0

0.4

6.0 k

0.04

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

1.0 k

2.0 k

0.4

4.0 k

3.0 k

2.0

2.2

1.0

4.0 A

3.4

0.1

0.6

0.2 1.0 2.0 20 100

1.8

2.6

3.0

0.5 5.0 50

1.4

2.2

1.0

IC =

0.5 A 1.0 A 2.0 A 4.0 A

2.2

0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2 0.4

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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Figure 12. Temperature Coefficients

NPN

TIP110, 111, 112

PNP

TIP115, 116, 117

Figure 13. Collector Cut-Off Region

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-0.8

-1.6

-2.4

-3.2

-4.0

-4.8

*APPLIES FOR IC/IB ≤ hFE/3

*qVC for VCE(sat)

qVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

-55°C to 25°C

0.1

25°C to 150°C

-55°C to 25°C

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-0.8

-1.6

-2.4

-3.2

-4.0

-4.8

*APPLIES FOR IC/IB ≤ hFE/3

*qVC for VCE(sat)

qVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

-55°C to 25°C

0.1

25°C to 150°C

-55°C to 25°C

105

-0.6

103

102

100

104

101

10-1

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT (A)μIC

105

-0.6

103

102

100

104

101

10-1

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT (A)μIC

Figure 14. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.71 A,

NPN test shown; for PNP test

reverse all polarity and use MJE224 driver.

0.71 A

0 V

-5 V

tw ≈ 3.5 ms (SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

20 V

100 ms

VCE(sat)

INPUT MJE254

50 W

RBB1

2kW

RBB2

100 W

VBB2 = 0

TUT

VCE MONITOR

100 mH

VCC = 20 V

MONITOR

RS =

0.1 W

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS

VBB1 = 10 V +

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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TIP110/D

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