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2N7002W — N-Channel Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002W Rev. A1 2
Electrical Characteristics TA = 25°C unless otherwise noted
Off Characteristic s (Note1)
On Characteristics (Note1)
Dynamic Characteristics
Switching Characteristics
Note1 : Short duration test pulse used to mi nimize self-heating effect.
Symbol Parameter Test Condition Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Vo ltage VGS=0V, ID=10uA 60 78 - V
IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V
VDS=60V, VGS=0V, @TC=125C-0.001
71.0
500 A
IGSS Gate-Body Leakage VGS=±20V, VDS=0V - 0.2 ±10 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.0 1.76 2.0 V
RDS(ON) Static Drain-Source
On-Resistance VGS=5V, ID=0.05A,
VGS=10V, ID=0.5A, @TJ=125°C -
-1.6
2.53 7.5
13.5
ID(ON) On-State Drain Current VGS=10V, VDS=7.5V 0.5 1.43 - A
gFS Forward Tr ansconductance VDS=10V, ID=0.2A 80 356.5 - mS
Ciss Input Capacitance VDS=25V, VGS=0V, f=1.0MHz -37.850pF
Coss Output Capacitance - 12.4 25 pF
Crss Reverse Transfer Capacitance - 6.5 7.0 pF
tD(ON) Turn-On Delay Time VDD=30V, ID=0.2A, VGEN=10V
RL=150, RGEN=25
-5.8520
ns
tD(OFF) Turn-Off Delay Time - 12.5 20
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