SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL BCX70G AG
BCX70H AH
BCX70J AJ
BCX70K AK
BCX70GR AW
BCX70HR 9P
BCX70JR AX
BCX70KR P9
COMPLEMENTARY TYPE BCX71
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage VCES 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC200 mA
Base Current IB50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group G hFE
Group H hFE
Group J hFE
Group K
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
SWITCHING CIRCUIT
BCX70
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC
=2mA
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IEBO
=1µA
Collector-Emitter Cut-off Current ICES 20
20
nA
µA
VCES
=45V
VCES
=45V,
Tamb
=150oC
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.12
0.20
0.35
0.55
V
V
IC
=10mA,IB
= 0.25mA
IC
= 50mA, IB
=1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT) 0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC
=10mA,IB
=0.25mA,
IC
=50mA, IB
=1.25mA
Base - Emitter Voltage VBE 0.55
0.52
0.65
0.78
0.75
V
V
V
IC
=10µA, VCE
=5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE =1V
Static Forward Current
Transfer Ratio BCX70G hFE 120
50
78
170 220
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
BCX70H hFE
20
180
70
145
250 310
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
BCX70J hFE
40
250
90
220
350 460
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
BCX70K hFE
100
380
100
300
500 630
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
Transition Frequency fT125 250 MHz IC
=10mA, VCE =5V
f = 100MHz
Emitter-Base Capacitance Cebo 8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance Ccbo 4.5 pF VCBO
=10V, f =1MHz
Noise Figure N 2 6 dB IC
= 0.2mA, VCE = 5V
RG
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
IC
:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB
=3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCX70
C
B
E
R
1
R
2
R
L
50Ω
V
CC
(+10V)-V
BB
+10V t
r
< 5nsec
Z
in
≥ 100kΩ
Oscilloscope
1µsec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50Ω
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL BCX70G AG
BCX70H AH
BCX70J AJ
BCX70K AK
BCX70GR AW
BCX70HR 9P
BCX70JR AX
BCX70KR P9
COMPLEMENTARY TYPE BCX71
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage VCES 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC200 mA
Base Current IB50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group G hFE
Group H hFE
Group J hFE
Group K
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
SWITCHING CIRCUIT
BCX70
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC
=2mA
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IEBO
=1µA
Collector-Emitter Cut-off Current ICES 20
20
nA
µA
VCES
=45V
VCES
=45V,
Tamb
=150oC
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.12
0.20
0.35
0.55
V
V
IC
=10mA,IB
= 0.25mA
IC
= 50mA, IB
=1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT) 0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC
=10mA,IB
=0.25mA,
IC
=50mA, IB
=1.25mA
Base - Emitter Voltage VBE 0.55
0.52
0.65
0.78
0.75
V
V
V
IC
=10µA, VCE
=5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE =1V
Static Forward Current
Transfer Ratio BCX70G hFE 120
50
78
170 220
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
BCX70H hFE
20
180
70
145
250 310
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
BCX70J hFE
40
250
90
220
350 460
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
BCX70K hFE
100
380
100
300
500 630
IC
=10µA, VCE =5V
IC
=2mA, VCE =5V
IC
=50mA, VCE =1V
Transition Frequency fT125 250 MHz IC
=10mA, VCE =5V
f = 100MHz
Emitter-Base Capacitance Cebo 8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance Ccbo 4.5 pF VCBO
=10V, f =1MHz
Noise Figure N 2 6 dB IC
= 0.2mA, VCE = 5V
RG
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
IC
:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB
=3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCX70
C
B
E
R
1
R
2
R
L
50Ω
V
CC
(+10V)-V
BB
+10V t
r
< 5nsec
Z
in
≥ 100kΩ
Oscilloscope
1µsec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50Ω
