HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002. 03.28
Page No. : 1/4
HTIP112 HSMC Product Specification
HTIP112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Tempe ratu re........................................................................................................ -55 ~ +150 °C
Juncti on Tempera ture................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 50 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltag e................................................................................................. 100 V
BVCEO Collector to Emitter Voltag e.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (Continue) ......................................................................................................... 4 A
IC Collector Current (Peak)................................................................................................................ 6 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA
BVCEO 100 - - V IC=30mA
ICBO - - 1 mA VCB=100V
ICEO - - 2 mA VCE=50V
IEBO - - 2 mA VEB=5V
*VCE(sat ) - - 2.5 V IC=2A, I B=8m A
*VBE(on) - - 2.8 V IC=2A, VCE=4V
*hFE1 1 - - K IC=1A, VCE=4V
*hFE2 500 - - IC=2A, VCE=4V
Cob - - 200 pF VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
R2R1
C
E
B
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 2/4
HTIP112 HSMC Product Specificat i on
Characteristics Curve
Curren t Gain & Collect or Cur ren t
1
10
100
1000
10000
1 10 100 1000 10000
Collec tor Curr e nt- I
C
(mA)
hFE
25
o
C
125
o
C
75
o
C
hFE @ V
CE
=4V
Curren t Gain & Collect or Cur ren t
1
10
100
1000
10000
1 10 100 1000 10000
Collector Curren t-I
C
(mA)
hFE
25
o
C
125
o
C75
o
C
hFE @ V
CE
=3V
Satur ation Voltage & C ollect or Curren t
100
1000
10000
100 1000 10000
Collec tor Curr e nt- I
C
(mA)
Saturation Volta ge (mV)
V
CE(sat)
@ I
C
=100I
B
125
o
C75
o
C
25
o
C
Satur ation Volta ge & Collector Cu rr ent
100
1000
10000
100 1000 10000
Collec tor Curr e nt- I
C
(mA)
Saturation Volta ge (mV)
V
CE(sat)
@ I
C
=250I
B
125
o
C
75
o
C
25
o
C
Satur ation Voltage & C ollect or Curren t
100
1000
10000
100 1000 10000
Collec tor Curr e nt- I
C
(mA)
Sat u r ation Volt ag e ( mV)
V
BE(sat)
@ I
C
=250I
B
125
o
C
75
o
C
25
o
C
ON Voltage & Col lcetor Curren t
100
1000
10000
100 1000 10000
Collec tor Curr e nt- I
C
(mA)
O N Voltage ( m V)
V
BE(ON)
@ V
CE
=4V
25
o
C
75
o
C
125
o
C
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 3/4
HTIP112 HSMC Product Specificat i on
Switch in g Time & Col lector Curren t
0.1
1
10
110
Collector Curren t-I
C
(A)
Switching Times ( us)..
V
CC
=30V,I
C
=250I
B1
= -250I
B2
Tstg
Tf
Ton
ON Voltage & Col lcetor Curren t
100
1000
10000
100 1000 10000
Collec tor Curr e nt- I
C
(mA)
O N Voltage ( m V)
V
BE(ON)
@ V
CE
=3V
25
o
C
75
o
C
125
o
C
Capcitance & Reverse-Biased Volta ge
10
100
0.1 1 10 100
Re ver se Biased Voltage ( V)
Capacitanc e (pF)
Cob
Safe Oper atin g Area
0.01
0.1
1
10
1 10 100
Forwar d Vol t age ( V)
Collector Current-I
C
(A)
PT=1mS
PT=100mS
PT=1S
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 4/4
HTIP112 HSMC Product Specificat i on
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum th ickness of base material.
4.If there is any questi on with packi ng speci fi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 All oy; sol der pl ating
• Mold Compound: Epoxy resin fam ily, fl ammabi lity solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to mak e changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any consequence of customer product design, i nfringement of patents, or applic ati on assi stance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu I ndustrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
Marking:
Date Code Control Code
H
1TIP
12