G E SOLID STATE O1 Def 3a7soa1 0017330 3 i 3878081 GE SOLID STATE ' O1E 17330 077-33 Darlington Power Transistors 29 TIP110, TIP111, TIP112 File Number 1336 2-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS . For Low and Medium Frequency Power E Switching, Hammer Driver, Audio Amplifier, and c a icati ance c Series and Shunt Regulator Applications (FLANGE) | @) Po Features: Operates from !C without predriver Gain of 1000 at 1A Low leakage at high temperatures Designed for completementary use with TIP=116, 116, and 117 Hard glass passivation Wire-bonded construction TOP VIEW 6 9209-39969 JEDEC TO-220AB The RCA-TIP110, TIP111 and TiP112 series monolithic n-p- n silicon Darlington transistors are designed for low and medium frequency power applications. The construction of these devices provides good forward-bias second-break- down capability; their high gain makes it possible for them to be driven directly from integrated circuits. These devices are supplied in the JEDECG TO-220AB : fo (VERSAWATT) plastic package. o2ts-2aser Fig, 1 - Schematic diagram for all types. MAXIMUM RATINGS, Absolute Maximum Values: TIP110 TIP111 TIP112 UNITS VOBO vee tee cece cnc en eet ee teen eee sneenen nes pec eccenenteesees taeee 60 80 100 Vv Vceo(sus) .. 60 80 100 v VEBO ore eee 5 Vv IG veverneeees 2 A IGM crcveener 4 A IQ cece ce eecee cece tneee teens sehen bee bs ee eay Heed eee tbat tbat ee sags 005 A Pr: To up to 25C _______.. 50 W Te above 26C wecceecesecneneeeceverrectan sss Oerate linearly at oO WiC Teytge Ty vce sececteeeeenvenueceteverensenns reaper neuene beveetsenees .. 6510 150 C TT At distance 1/8 in. (3.17 mm) from case for 10S MAX. oc. case c vee ee _ 260 C 332 0872 F-13 Te a _ a pn ee we ee eee SanaG E SOLID STATE a1 DE ff 3875081 0017331 5 ff 3875081 G E SOLID STATE ~ O1E 17331 0 133-29 Darlington Power Transistors TIP110, TIP111, TIP112 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) =25C TEST CONDITIONS LIMITS CHARACTERISTIC Voltage Current UNITS Vide Adc TIP110 TIP111 TIP112 VCE | Vpe le IB MIN. | MAX, | MIN. | MAX.] MIN. } MAX. IcBo see yy - | - | mt 1 -{[~-]-f - le= 0 808 _- - - _ _ _ 1 - _ 1008 _ _ - - _ - _ - 1 mA 30 _ a 0 - 2 - - _ - ICEO 40 - - 0 - _ 2 _ ~ 50 - 0 _ - - _- - 2 1EBO _ 5 0 _ - 2 - 2 - 2 mA Voeo(sus) _ - 0.035 0 60 - 80 _ 100 - V hee 4 4b ~ 1000 _ 1000 - 1000 - _ 4 _ ab - 500 - 500 _ 500 ~ VBE 4 - ab - _ 2.8 - 2.8 _ 2.8 v VoE(sat) _ = 2b | 0008 | 2.5 | 25 - 25 | _ Cobo 108 _ _ 100 - 100 100 pf intel 10 - 0.75 25 TYP, 25 TYP. 25 TYP. - f = 1.0 mHz IS/b t=0. 5s non- 40 -_ _ - 1.25 - 1.25 _ 1.25 ~ A rep. pulse Rec - _ _ - - 2.5 _ 25 2.5 C/W Rava _ - _ _ _ 62.5 - 62.5 - 62.5 i Vop value. b Pulsed: Pulsed duration = 300 ys, duty factor <2%, r Tes 2SC OR PERCENTAGE OF RATED CURRENT AT SPECIFIED VOLTAGE, 3 a a : 3 z i r 3 =z ge NOTE. CURRENT DERATING VOLTAGE APPLIES CHLY TO THE UNITED PORTION AND THE Ig7y PORTION OF MAXIE OF CURVE. 00 HOT OERAT SPECIFIED VALUE FOR Ke RATING AREA THE max CASE TEMPERATURE (Te}C 923-20696R Fig. 2 - Derating curve for all types, COLLECTOR CURRENT (I}-A tcs-34524 lo Fig. 3 - Typical dc-beta characteristics for all types. 333G E SOLID STATE Ol Ej 3a750a1 oO17392 7 Tt 3875081 GE SOLID STATE O1 17332 ot3329 . Darlington Power Transistors TIP110, TIP1414, TIP112 CASE TEMPERATURE(T)= 25C {CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE} no INGLE Bi PETITIVE GH 1 NRE fit OC OPERATION DISSIPATION- LIMITEO COLLECTOR CURRENT (Ig )A 60 (TIPIIO VoEo(MAX1s 8OV(TIPHI Voeo (MAX 16 OV ( TIPII2 1 7 Fey z 4 100 +, COLLECTOR- TO- EMITTER VOLTAGE (Yoel- i O2CM-34089 Fig. 4 - Maximum operating areas for all types (To = 25C). COLLECTOR ~ TO~EMITTER VOLTAGE (Yop) #3 COLLECTOR CURRENT (I, 1-A o 1 2 3 o 1 2 3 COLLECTOR CURRENT (Lc)-A BASE -T6- EMITTER VOLTAGE (Vpe)-V 9205-34525 S2C$-54526 Fig. 5 - Typical saturation characteristics for ail types. Fig. 6 - Typical transter characteristics for all types. Ipj"Tag" INPUT CAPACITANCE (Cjp,.)~pF OR COMMOH~ BASE OUTPUT CAPACITANCE (Coto! PF, COLLECTOR- TO-8ASE VOLTAGE {Veg ) VOR enca-54588 EMITTER-TO-BASE VOLTAGE (Vegi V 9268-34527 Fig. 7 - Typical common-base input (Cjpo) or output (Cobo) Capactatance characteristic {all types). Fig.8-Typical saturated switching characteristics (all types). 334G E SOLID STATE O1 DE ff 3a7soa1 0017333 4 , O1E 17333 Bt - Dartington power Peed , TIP110, TIP111, TIP112 NC isaaw Yann age Yee NON IND Ql, Q2 s 2N6354 Tg CURRENT O3 2N3762 lec Rew 04,05, 0.00pra , g CURREN 96,07 CA3725 QUAD AT Soa S47a Son PROBE "TRANSISTOR 5 5 . ARRAY. * THIS CONNECTION SHOULD BE MADE AS CLOSE AS POSSIBLE To COLLECTOR OF TRANSISTOR UNDER TEST ins 2.2K AIN3591 T= VB{CL AMP) 7 4v 0.005 pF . eH KELVIN SENSING 224690 1 ** CONNECTION : NOTE: BATTERY SYMBOLS Voc, Vg) Vago. Fr 80 er Va (cuAMp) INDICATE RIGOROUSLY FILTERED VOLTAGE SOURCES AT THE CIRCUIT TERMINALS 2ovr> TO ACCOMODATE THE FAST t; AND ty TIMES Lio vey AND HIGH CURRENTS PRESENT IN THE CIRCUIT, 20 pS = 5 Yee = 92CM+34640 ADd FOR Igo FREQ* 500 hz Fig. 9 - Circuit for measuring switching times. WrAB qe Xey 92C8-3038IR2 etc | y=V-z tyantition " X-W NOTE: TRANSITION TIME FROM 90% la, TO 90% pp MUST BE LESS THAN 0.6 us, Fig. 10- Phase relationship between input and output currents showing reference points for specification of switching times. . 335 0875 G-02