© 2007 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ250 V
VGSM Transient ± 30 V
ID25 TC= 25°C*76 A
IDM TC= 25°C, pulse width limited by TJM 170 A
IAS TC= 25°C 8 A
EAS TC= 25°C 1.5 J
PDTC= 25°C 460 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
Plastic body for 10seconds 260 °C
MdMounting Torque TO-220,TO-3P,TO247 1.13 / 10 Nm/lb.in.
FCMounting Force TO-262,TO-263 10..65 / 2.2..14.6 N/lb.
Weight TO-262,TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
G = Gate D = Drain
S = Source TAB = Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ . Max.
BVDSS VGS = 0V, ID = 1mA 250 V
VGS = 0V, ID = 10A 300
VGS(th) VDS = VGS, ID = 1mA 3 5 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 2 μA
VGS = 0V TJ = 125°C 200 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 39 mΩ
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Features
zInternational standard packages
z Avalanche rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
VDSS = 250V
ID25 = 76A
RDS(on) ≤≤
≤≤
≤ 39mΩΩ
ΩΩ
Ω
DS99663C(10/07)
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T
IXTQ76N25T
Typical avalanche BV = 300V
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
zUninterruptible power supplies
zHigh speed power switching
applications
TO-3P (IXTQ)
G
DS(TAB)
TO-263 (IXTA)
GS
(TAB) GDS(TAB)
TO-247 (IXTH)
GDS(TAB)
TO-262 (IXTI) TO-220 (IXTP)
G(TAB)
DS
Preliminary Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 43 72 S
Ciss 4500 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 480 pF
Crss 46 pF
td(on) 22 ns
tr 25 ns
td(off) 56 ns
tf 29 ns
Qg(on) 92 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 25A 28 nC
Qgd 21 nC
RthJC 0.27 °C /W
RthCH TO-220 0.50 °C W
TO-3P, TO-247 0.21 °C W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 76 A
ISM Repetitive, pulse width limited by TJM 200 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 148 ns
IRM 21 A
QRM 1.6 μC
Notes: 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
*: Current may be limited by external lead limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = 38A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
© 2007 IXYS CORPORATION, All rights reserved
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
TO-263 (IXTA) Outline
TO-3P (IXTQ) Outline
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Leaded 262 (IXTI) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Fi g . 1. O u tp u t C h aracter i sti cs
@ 25º C
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- A mperes
V
GS
= 10V
8V
5V
6V
7V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 125ºC
0
10
20
30
40
50
60
70
80
01234567
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 38A Valu e
vs. Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centi grade
R
DS(on)
- N orma lize d
V
GS
= 10V
I
D
= 76A
I
D
= 38A
Fig. 5. R
DS(on)
Normalized to I
D
= 38A Value
vs. D r ain C u r ren t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
0 20 40 60 80 100 120 140 160 180
I
D
- A mp e re s
R
DS(on)
- N orma lize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. D r ai n C u rr en t vs. C ase Temper atu r e
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Deg ree s Centigrad e
I
D
- Am peres
© 2007 IXYS CORPORATION, All rights reserved
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS - V olts
ID - A m peres
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140 160 180
ID - Am peres
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.40.50.60.70.80.91.01.11.2
VSD - V olts
IS - A m peres
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar ge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
QG - NanoCou lom bs
VGS - V o lts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VDS - V olt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an si en t Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. 14. Resistive Turn-on
Rise T ime vs. Drain Current
8
10
12
14
16
18
20
22
24
26
28
30
32
34
15 20 25 30 35 40 45 50 55 60 65 70 75 80
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 15. R esi stive Turn-o n
Switchi n g Times vs. Gate R esistance
10
12
14
16
18
20
22
24
26
28
30
3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohm s
t
r
- Nanoseconds
20
21
22
23
24
25
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 76A
I
D
= 38A
I
D
=
38A
Fi g . 16. R esi sti ve Turn -o ff
Switching T imes vs. Junction T em perature
16
18
20
22
24
26
28
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
44
47
50
53
56
59
62
65
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 15V
V
DS
= 125V
I
D
= 38A
I
D
= 76A
Fi g . 17. R esi sti ve Turn -o ff
Switchi n g Times vs. D r ai n C u r r en t
12
14
16
18
20
22
24
26
28
30
15 20 25 30 35 40 45 50 55 60 65 70 75 80
I
D
- Amper es
t
f
- Nanoseconds
43
46
49
52
55
58
61
64
67
70
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 18. R esi sti ve Turn -o ff
Switchi n g Ti mes vs. Gate Resistance
10
20
30
40
50
60
70
80
3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
f
- Nanoseconds
50
70
90
110
130
150
170
190
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 38A, 76A
Fi g . 13. R esi sti ve Turn -o n
Rise Time vs. Jun ctio n Temp er atur e
10
12
14
16
18
20
22
24
26
28
30
32
34
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 15V
V
DS
= 125V
I
D
= 38A
I
D
= 76A
IXYS REF: T_76N25T(6E)06-28-06
