DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Preliminary Information Replaces August 2001, version DS5492-1.1 FEATURES DS5492-2.0 October 2001 KEY PARAMETERS 10s Short Circuit Withstand VCES High Thermal Cycling Capability VCE(sat) (typ) 3.2V Non Punch Through Silicon IC (max) 1200A Isolated MMC Base with AlN Substrates IC(PK) (max) 2400A 3300V External connection APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1200ESM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. C1 C2 C3 E1 E2 E3 Aux C G Aux E External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM1200ESM33-A000 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM1200ESM33-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V 20 V Continuous collector current Tcase = 80C 1200 A IC(PK) Peak collector current 1ms, Tcase = 115C 2400 A Pmax Max. transistor power dissipation Tcase = 25C, Tj = 150C 14.7 kW Diode I2t value VR = 0, tp = 10ms, Tvj = 125C 720 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS 10 pC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 33mm 20mm 175 Symbol Parameter Rth(j-c) Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 8.5 C/kW - - 17 C/kW - - 4 C/kW junction to case Rth(j-c) Thermal resistance (IGBT switch) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 C Diode - - 125 C -40 - 125 C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM1200ESM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 6 mA VGE = 0V, VCE = VCES, Tcase = 125C - - 90 mA Gate leakage current VGE = 20V, VCE = 0V - - 12 A VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 3.2 - V VGE = 15V, IC = 1200A, , Tcase = 125C - 4.0 - V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 1200 - A IFM Diode maximum forward current tp = 1ms - 2400 - A VF Diode forward voltage IF = 1200A - 2.5 - V IF = 1200A, Tcase = 125C - 2.5 - V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 270 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 15 - nF LM Module inductance - per arm - - 10 - nH Internal transistor resistance - per arm - - 0.09 - m RINT SCData Short circuit. ISC Tj = 125C, VCC = 2500V, I1 - 7800 - A tp 10s, VCE(max) = VCES - L*. di/dt I2 - 6600 - A IEC 60747-9 Note: L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Min. Typ. Max. Units IC = 1200A - 1800 - ns Fall time VGE = 15V - 250 - ns EOFF Turn-off energy loss VCE = 1800V - 1450 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1.5 - 500 - ns L = 100nH - 300 - ns Cge = 220nF - 1600 - mJ - 36 - C Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss Qg Gate charge Qrr Diode reverse recovery charge IF = 1200A, VR = 1800V, - 650 - C Irr Diode reverse recovery current dIF/dt = 5600A/s - 1000 - A Erec Diode reverse recovery energy - 750 - mJ Min. Typ. Max. Units IC = 1200A - 2000 - ns Fall time VGE = 15V - 300 - ns EOFF Turn-off energy loss VCE = 1800V - 1650 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1.5 - 550 - ns L ~ 100nH - 300 - ns Cge = 220nF - 2200 - mJ Tcase = 125C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss Qrr Diode reverse recovery charge IF = 1200A, VR = 1800V, - 1000 - C Irr Diode reverse recovery current dIF/dt = 4500A/s - 1050 - A Erec Diode reverse recovery energy - 1250 - mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM1200ESM33-A000 TYPICAL CHARACTERISTICS 2400 2400 2200 Common emitter. Tcase = 25C 2200 1800 1800 1600 1600 Collector current, IC - (A) 2000 Collector current, IC - (A) 2000 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 VGE = 20V VGE = 15V VGE = 12V VGE = 10V 200 0 0 Common emitter. Tcase = 125C 1 2 3 4 Collector-emitter voltage, Vce - (V) 5 VGE = 20V VGE = 15V VGE = 12V VGE = 10V 200 0 1 6 Fig. 3 Typical output characteristics 2 3 4 5 6 Collector-emitter voltage, Vce - (V) Conditions: Tcase = 125C IC = 1200A Vcc = 1800V 3200 Cge = 120nF Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 4000 Conditions: Tcase = 125C Rg = 1.5 Ohms Vcc = 1800V 2000 Cge = 120nF 1500 1000 2400 1600 800 500 Eon Eoff Erec 200 400 600 800 Collector Current, IC - (A) 1000 1200 Fig. 5 Typical switching energy vs collector current 6/10 8 Fig. 4 Typical output characteristics 2500 0 0 7 0 1 Eon Eoff Erec 2 3 4 Gate resistance, Rg - (Ohms) Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 2400 2600 Tj = 25C Tj = 125C 2200 2400 2000 2200 1800 2000 1800 Collector current, IC - (A) 1600 Forward current, IF - (A) Chip 1600 1400 Module 1400 1200 1200 1000 1000 800 800 600 600 400 400 Tcase = 125C 200 Vge = 15V Rg(min) = 1.5 0 0 500 1000 1500 2000 2500 3000 Collector emitter voltage, Vce - (V) 200 0 0.5 1 1.5 2 2.5 3 3.5 4 Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics 3500 Fig. 8 Reverse bias safe operating area 2000 10000 1800 1600 tp 1000 Reverse recovery current, Irr - (A) tp Collector Current, Ic - (A) 1400 tp 100 1200 1000 800 = 1 = 10 = 0 50 s s m s Ic (m ax ) DC 10 600 1 400 200 0 0 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 3500 0 1 Tvj = 125C, Tcase = 80C 10 100 1000 Collector emitter voltage, Vce - (V) Fig. 10 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 10000 7/10 DIM1200ESM33-A000 2200 100 1800 Diode DC collector current, IC - (A) Transient thermal impedance, Zth (j-c) - (C/kW ) 2000 1600 Transistor 10 1400 1200 1000 800 1 600 IGBT Diode 0.1 0.001 Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01 1 0.2357 0.0876 0.4646 0.0843 2 1.236 3.7713 2.46 3.7205 0.1 Pulse width, tp - (s) 3 1.747 33.5693 3.4987 33.2138 1 Fig. 11 Transient thermal impedance 8/10 4 5.2858 236.8023 10.5854 236.5275 10 400 200 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160 Fig. 12 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200ESM33-A000 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 DIM1200ESM33-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5492-1 Issue No. 2.0 October 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com