General Purpose Transistor
NPN Silicon
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Symbol
VCEO
Value
65
45
30
Unit
Rating
1
2
3
BASE
COLLECTOR
EMITTER
SOT-23
BC846
BC847, BC850
BC848, BC849
BC846
BC847, BC850
BC848, BC849
BC846
BC847, BC850
BC848, BC849
IC
VCBO
VEBO
80
50
30
6.0
6.0
5.0
mAdc
Vdc
Vdc
Vdc
12
3
1
2
3MARKING DIAGRAM
XX = Device
Code (See
Table Below)
*Moisture Sensitivity Level: 1
*ESD Rating - Human Body Model:>4000V
-Machine Model:>400V
Collector Current-Continuous 100
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;
BC848B;=1K; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G
Device Marking
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
M aximum R atings ( TA=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
(Note 1.)
(Note 2.)
q
R JA
q
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WE IT R ON
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 10mA, VCE= 5.0Vdc, f=100MHz)
Output Capacitance
(VCB= 10V, f=1.0MHz)
Noise Figure
(IC= 0.2mA, VCE= 5.0Vdc,
Rs=2.0 k ,
f=1.0 kHz, BW=200Hz)
fT
Cobo
NF
MHz
pF
BC846A,B, BC847A,B,C, BC848A,B,C,
BC849B,C, BC850B,C
100
- -
- -
-
-
-
-
4.5
10
4.0
dB
W
V
V
V
DC Current Gain
(IC= 10µA, VCE=5.0V)
Collector-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter On Voltage
(IC= 2.0mA, VCE=5.0V)
(IC= 10mA, VCE=5.0V)
hFE
VCE(sat)
VBE(sat)
VBE(on)
On Characteristics
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC849B. BC850B,
BC847C, BC848C, BC849C, BC850C
-
-
-
110
200
420
-
-
-
-
-
-
660
-
-
-
580
-
90
150
270
-0.7
-0.9
-
-
-
220
450
800
0.25
0.6
700
770
-
(IC= 2.0mA, VCE=5.0V) 180
290
520
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
Collector-Emitter Breakdown Voltage
(IC= 10mA)
Collector-Emitter Breakdown Voltage
(IC=10 µA ,VEB=0)
Collector-Base Breakdown Voltage
(IC=10 µA)
Emitter-Base Breakdown Voltage
(IE=1.0 µA)
Collector Cutoff Current (VCB=30V)
(VCB=30V, TA=150 C)
V(BR)CEO
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO nA
mA
BC846A,B
BC847A,B,C BC850B.C
BC848A,B,C BC849B,C
BC846A,B
BC847A,B,C BC850B.C
BC848A,B,C BC849B,C
BC846A,B
BC847A,B,C BC850B.C
BC848A,B,C BC849B,C
BC846A,B
BC847A,B,C BC850B.C
BC848A,B,C BC849B,C
V
V
V
V
Characteristics Symbol Min Max Unit
Off Characteristics
Typ
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
5.0
Electrical Characteristics (TA=25 C Unless Otherwise noted)
WEITRON
WE IT R ON
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
http://www.weitron.com.tw
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
C,CAPACITANCE (pF)
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
10
7.0
5.0
3.0
2.0
1.0
Cib
TA=25 C
Cob
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain- Bandwidth Product
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
400
300
200
100
80
60
40
20
30
VCE=10V
TA= 25 C
Figure1.Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
hFE,NORMALIZED DC CURRENT GAIN
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
VCE=10V
TA=25 C
Firure2. "Saturation" And "On" Voltage
IC, COLLECTOR CURRENT (mAdc)
V, VOLTAGE (VOLTS)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TA=25 C
VBE(sat)@IC/BC=10
VBE(ON)@VCE= 10V
VCE(sat)@IC/BC=10
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
TA=25 C
IC= 200mA
IC=-50mA
IC= 20mA
IC=
10mA
IC= 100mA
0.02 0.1 1.0 10 20
2.0
1.6
1.2
0.8
0.4
0
qVB, TEMPERATURE COEFFICIENT (mV/ C)
-55 C to +125 C
1.0
1.2
1.6
2.0
2.4
2.8
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
BC847/BC848/BC849/BC850 Series
WEITRON
WE IT R ON
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
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IC=
10mA
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
0.4
0
2.0
1.6
1.2
0.8
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20mA 50mA 100mA 200mA
TA=25 C
0.2 0.5 1.0 -2.0 5.0 10 20 50 100 200
1.0
1.4
1.8
2.2
2.6
3.3
Figure 10. Base-Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
qVB TEMPERATURE COEFFICIENT (mV/ C)
qVB for VBE
-55 C to 125 C
0.1 0.2 0.5 1.0 2.0 5.0 10 50 10020
20
10
40
8.0
6.0
4.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
C. CAPACTIANCE (pF)
TA=25 C
Cib
Cob
Figure 11. Capacitance
1.0 10 100
Figure 12.Current-Gain-Bandwidth Product
IC, COLLECTOR CURRENT (mA)
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
500
200
100
50
20
VCE=5.0V
TA=25 C
5.0
50
0.1 0.2 1.0 10 100
2.0
1.0
0.5
0.2
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORAMALIZED)
Figure 7.DC Current Gain
VCE=5V
TA=25 C
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT(mA)
Figure 8. "ON" Voltage
V,Voltage (Volts)
1.0
0.8
0.6
0.4
0.2
0
TA=25 C
VBE(sat)@IC/IB=10
VCE(sat)@IC/IB=10
VBE@VCE=-5.0V
BC846 Series
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
EG
M
L
H
J
T OP VIE W
K
C
SOT-23 Package Outline Dimensions Unit:mm
WEITRON
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BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
