BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code (See Table Below) 1 1 BASE 2 SOT-23 1 2 EMITTER 2 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage BC847, BC848, Collector-Base Voltage BC847, BC848, Emitter-Base VOltage BC846 BC850 BC849 BC846 BC850 BC849 BC846 BC847, BC850 BC848, BC849 Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 65 45 30 80 50 30 6.0 6.0 5.0 Unit Vdc 100 mAdc Vdc Vdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage, Temperature Range Symbol PD Max Unit 225 1.8 mW mW/ C C/W R qJA 556 PD 300 2.4 R qJA 417 mW mW/ C C/W TJ,Tstg -55 to +150 C Device Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina WE ITR O N http://www.weitron.com.tw BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C Electrical Characteristics WE IT R ON (TA=25 C Unless Otherwise noted) Min Typ Max Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 45 30 - - V V(BR)CES Collector-Emitter Breakdown VoltageBC846A,B (IC=10 A ,VEB=0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 A) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 A) BC846A,B V(BR)EBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 6.0 6.0 5.0 - - V - - 15 5.0 nA mA 110 200 90 150 270 180 290 220 450 420 520 800 - 0.25 0.6 Characteristics Symbol Unit Off Characteristics Collector Cutoff Current (VCB=30V) (VCB=30V, TA=150 C) ICBO On Characteristics DC Current Gain (IC= 10A, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C hFE (IC= 2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC849B. BC850B, BC847C, BC848C, BC849C, BC850C Collector-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) VCE(sat) - VBE(sat) - Base-Emitter On Voltage (IC= 2.0mA, VCE=5.0V) (IC= 10mA, VCE=5.0V) VBE(on) 580 - -0.7 -0.9 - 660 - 700 770 - - V V V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10mA, VCE= 5.0Vdc, f=100MHz) Output Capacitance (VCB= 10V, f=1.0MHz) Noise Figure (IC= 0.2mA, VCE= 5.0Vdc, BC846A,B, BC847A,B,C, BC848A,B,C, Rs=2.0 k W , BC849B,C, BC850B,C f=1.0 kHz, BW=200Hz) WEITRON http://www.weitron.com.tw fT 100 - Cobo - - 4.5 MHz pF dB NF - - 10 4.0 BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C WE IT R ON 1.0 2.0 TA=25 C 0.9 VCE=10V TA=25 C 1.5 V, VOLTAGE (VOLTS) hFE,NORMALIZED DC CURRENT GAIN BC847/BC848/BC849/BC850 Series 1.0 0.8 0.6 0.4 0.8 VBE(sat)@IC/BC=10 0.7 VBE(ON)@VCE= 10V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat)@IC/BC=10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 0.1 200 2.0 1.6 IC= 200mA 1.2 IC= 10mA 0.4 0 IC= 100mA IC=-50mA IC= 20mA 0.02 0.1 1.0 10 20 Cib 3.0 1.0 0.4 Cob 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances WEITRON http://www.weitron.com.tw 40 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) C,CAPACITANCE (pF) TA=25 C 2.0 5.0 7.0 10 20 30 50 70 100 -55 C to +125 C 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 2.0 3.0 1.0 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 7.0 0.5 0.7 1.0 Firure2. "Saturation" And "On" Voltage TA=25 C 0.8 0.2 0.3 IC, COLLECTOR CURRENT (mAdc) qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mAdc) Figure1.Normalized DC Current Gain 400 300 200 VCE=10V TA= 25 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 6. Current-Gain- Bandwidth Product 50 BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C WE IT R ON 1.0 TA=25 C VCE=5V TA=25 C 0.8 VBE(sat)@IC/IB=10 2.0 V,Voltage (Volts) hFE, DC CURRENT GAIN (NORAMALIZED) BC846 Series 1.0 0.5 0.6 VBE@VCE=-5.0V 0.4 0.2 0.2 VCE(sat)@IC/IB=10 0.1 0.2 1.0 10 0 100 IC, COLLECTOR CURRENT (mA) 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT(mA) 2.0 TA=25 C 1.6 20mA 50mA 100mA 200mA 1.2 0.8 0.4 IC= 10mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 1.4 1.8 qVB for VBE -55 C to 125 C 2.2 2.6 3.3 20 0.2 0.5 1.0 IB, BASE CURRENT (mA) fT, CURRENT-GAIN-BANDWIDTH PRODUCT C. CAPACTIANCE (pF) TA=25 C Cib 10 8.0 6.0 2.0 0.1 Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance WEITRON http://www.weitron.com.tw 5.0 10 20 50 100 Figure 10. Base-Emitter Temperature Coefficient 40 4.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region 20 200 Figure 8. "ON" Voltage qVB TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7.DC Current Gain 100 50 100 500 VCE=5.0V TA=25 C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 12.Current-Gain-Bandwidth Product 200 BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C SOT-23 Package Outline Dimensions Unit:mm A B T OP V IE W E G Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M