Ordering number: EN 462E | 28C2078 NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amp Applications Absolute Maximum Ratings: at Ta=25C unit Collector-to-Base Voltage Vorpo 80 V Collector-to-Emitter Voltage Vorr Rpp= 1502 75 V Emitter-to-Base Voltage VeRO 5 V Collector Current Ie 3 A Collector Current (Pulse) Icp A Collector Dissipation Pe 1.2 W Te=50C 10 W Junction Temperature Tj 150 % Storage Temperature Tstg -55 to +150 % Electrical Characteristics Characteristics at Tax25C min typ max unit Collector Cutoff Current Tepo Veprh0v,I,=0 10, pA Emitter Cutoff Current TBO Vepti,Ie=0 10 A DC Current Gain hep Vop=5V,1e=0.5A 25% 200* Gain Bandwidth Product fp Vogt l0V,In=0.1A 100 150 MHz Cutput Capacitance Cob Vopzl0V, f= 1MHz 45 60 pF C-E Saturation Voltage Vor(sat) IctlA,Tpz0.1A 0.15 0.6 v B-E Saturation Voltage VBE( sat) IpetA,Ipe0.1A 0.9 1.2 V C-B Saturation Voltage Vepr)cpo Ic=100pA,I_=0 80 V C-E Saturation Voltage VO BR)CER Tp tmA, Rpp=1502 75 V E-B Saturation Voltage VBR)EBO Ip=100nA,1,=0 5 V [At specified test circuit] Output Power Po Veo 12V,f=27MHz,Pi=0.2W 4.0 W Power Efficiency Nn 60 % * The 2SC2078 is classified by 0.5A hyp as follows: (25 B 50 | 40 Cc 80 [60 D 120/100 E 200! Package Dimensions 2010B (unit: mm) 15.1 14.0 b+-4.0 a7 q E m G E: Emitter 31 4 C: Collector r | 0.4 3B: Base nm | JEDEC: TO-220AB ETAJ : SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D251MH/ 4147KI/ g145K/2274K1 No.4621/32502078 2802078 27MHz Output Power Test Circuit ~l00p ui Unit (Resistance : Q, Capacitance ; F) Coil data Li: 0.3mm tinned wire, 94 4T L2: 0.6mm tinned wire, 94 4T RFC 2.2uH. 20 Ic - Vee Ls gem Ll < w a bs 5 iz 16 or ts ene] 2 eee, ih fe S12 oe A en | A 1 20mA bm , 08 Yea | a LOmA a 3 Lt os Le | | Ip=0 0 04 0.8 4.2 1.6 Collector-to-Emitter Volage, Veg - Vv Ic - VBE Vop= 10 8 Collector Current,IZ, ~ mA 3 Base-to-Emitter Volage,Vpp - V hee - Ic Vom=5 a | it fa A R100 8 3 aS p 7 i = fi aft! NN 2 La] 2 | & pee \\ o o & A 4 * 0 E s S 307 35 oO op * Collector Current, Io ~ mA 2SC 2078 L2 ~100p Ic - VCE goo LA 450 fA 1400 A 450 & goo A ~ a n Tow A ne 150 BA, yoo A 50 pO J Collector Current ,Ip - mA om o Collector-to-Emitter Volage,Vop - V fT - Ic Voge 10V Gain Bandwidth Product,fp - MHz 0.1 1.0 Collector Current,I, - A ao1 Cob - T== | MHZ Inp=0 A. | ( 2 O 7 ; 2 oc 5 ag 2 0 1.0 0 5 100 Collector-to-Base Voltage,Vo, ~ No.462 2/32802078 Po - Pj Po, Mc ~ VEC = oz 4 i it o o m6 m6 5 5 : : Pg Cd Cd 2 2 ed pe 62 52 f=27NHz R= 500 0 8 9 10 n 12 13 14 5 16 Input Power,Pi - W Supply Voltage,Vae - v _ Pc - Te Pc Ta 2 Cc Collector Efficiency, ne - % _ tw . N\ N & N\ Vs oe 2 a 5 - Collector Dipgipation,Pc - W 2 7 me oa a Ne & TS. 2 N NY Collector Dissipation,Pc - W an \ \ IS o oo Mm mw wo o 7) )0640,~C<~ii(<ii SCC C m t T. C aa mperature, Tc Ambient Temperature,Ta - C ase temp , 160 M No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contral systems, vehicles, disaster/crime-pravention equipment and the like, the faiture of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third partes. No.46 2-3/3