Order this document by 2N5877/D SEMICONDUCTOR TECHNICAL DATA ! . . . designed for general-purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS 150 WATTS * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc * Low Leakage Current -- ICEX = 0.5 mAdc (Max) @ Rated Voltage * Excellent DC Current Gain -- hFE = 20 (Min) @ IC = 4.0 Adc * High Current Gain -- Bandwidth Product -- fT = 4.0 MHz (Min) @ IC = 0.5 A IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol 2N5877 2N5878 Unit VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 10 20 Adc Base Current IB 4.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 0.857 Watts W/_C TJ, Tstg - 65 to + 200 _C Collector-Emitter Voltage Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JC 1.17 _C/W Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 80 -- -- Vdc -- -- 1.0 1.0 -- -- -- -- 0.5 0.5 5.0 5.0 -- -- 0.5 0.5 -- 1.0 35 20 4.0 -- 100 -- -- -- 1.0 3.0 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N5877 2N5878 ICEO 2N5877 2N5878 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) 2N5877 2N5878 2N5877 2N5878 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5877 2N5878 mAdc ICEX mAdc ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IE = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 10 Adc, IB = 2.5 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 2.5 Adc) Base-Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(sat) VBE(on) -- 2.5 Vdc -- 1.5 Vdc fT Cob 4.0 -- MHz -- 300 pF hfe 20 -- -- tr ts tf -- 0.7 s -- 1.0 s -- 0.8 s DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (2) (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5877, 2N5878 Small-Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Rise Time (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, See Figure 2) Storage Time Fall Time * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest. v v 2.0%. VCC - 30 V 7.5 RC SCOPE RB 0.3 25 0 51 D1 -11 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% For PNP test circuit, reverse all polarities. + 7.0 V FOR CURVES OF FIGURES 3 and 6, RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA Figure 2. Switching Time Test Circuit 2 t, TIME ( s) + 9.0 V 1.0 0.7 0.5 tr VCC = 30 V IC/IB = 10 TJ = 25C 0.2 0.1 0.07 0.05 td @ VBE(off) = 5.0 V 0.03 0.02 2N5877, 2N5878 (NPN) 0.01 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 P(pk) JC(t) = r(t) JC JC = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.2 0.3 0.1 0.5 2.0 3.0 5.0 t, TIME (ms) 1.0 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMPERES) 20 0.1 ms 1.0 ms 10 7.0 5.0 TJ = 200C dc 5.0 ms 3.0 2.0 1.0 0.7 0.5 0.3 0.2 5.0 0.5 ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5875, 2N5877 2N5876, 2N5878 7.0 70 20 10 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 Figure 5. Active-Region Safe Operating Area 700 10 7.0 5.0 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C C, CAPACITANCE (pF) t, TIME ( s) 3.0 TJ = 25C 500 2.0 ts 1.0 0.7 0.5 tf 0.3 0.2 Cib 300 200 Cob 100 2N5877, 2N5878 (NPN) 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPERES) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 2N5877, 2N5878 (NPN) 10 70 0.5 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 7. Capacitance 3 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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