UNISONIC TECHNOLOGIES CO., LTD
TIP112 NPN SILICON TRANSISTOR
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Copyright © 2012 Unisonic Technologies Co., Ltd QW-R203-022.D
NPN EPITAXIAL SILICON
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC TIP112 is designed for such applications as: DC/DC
converters supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
FEATURES
* High DC current gain : hFE = 1000 @ VCE =4V, IC=1A (Min)
* Low collector-emitter saturation voltage
EQUIVALENT TEST (R110k, R20.6k)
R1 R2
E
B
C
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
TIP112L-T60-K TIP112G-T60-K TO-126 E C B Bulk
TIP112L-TA3-T TIP112G-TA3-T TO-220 B C E Tube
TIP112L-TN3-R TIP112G-TN3-R TO-252 B C E
Tape Reel
TIP112L-TN3-T TIP112G-TN3-T TO-252 B C E Tube
TIP112 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 5 V
Collector Current DC IC 2
A
Peak ICM 4
Base Current (DC) IB 50 mA
Collector Dissipation
TO-126
PC
10
W TO-220 40
TO-252 15
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65~+150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage VCEO
(
SUS
)
IC=30mA, IB=0A 100 V
Collector-Emitter Saturation Voltage VCE
(
SAT
)
I
C=2A, IB=8mA 2.5 V
Base-Emitter Turn-On Voltage VBE
(
ON
)
V
CE=4V, IC=2A 2.8
Collector-Base Cut-Off Current ICBO V
CB=100V, IE=0A 1 mA
Collector-Emitter Cut-Off Current ICEO V
CE=50V, VB=0A 2 mA
Emitter-Base Cut-Off Current IEBO V
EB=5V, IC=0A 2 mA
DC Current Gain hFE VCE=4V, IC=1A 1000
VCE=4V, IC=2A 500
Collector Capacitance COB V
CB=10V, IE=0A, f=0.1MHz 100 pF
TIP112 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
IB=150uA
IB=200uA
IB=250uA
IB=300uA
IB=350uA
IB=500uA
IB=400uA
IB=450uA
Collector-Emitter Voltage, VCE (V)
Static Characteristics
Collector Current, IC(A)
012345
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0 VCE=4V
Collector Current, IC(A)
DC Current Gain
DC Current Gain, hFE
0.01 110
10
100
1000
10000
0.1
110
10
1
0.1
DC
5mS 1mS
100
Collector-Emitter Voltage, VCE (V)
Safe Operating Area
25
05075
100 125 150 175
0
10
20
30
40
50
60
70
80
Case Temperature, TC(°C)
Power Derating
TIP112 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R203-022.D
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.