TIP112 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-022.D
ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 5 V
Collector Current DC IC 2
A
Peak ICM 4
Base Current (DC) IB 50 mA
Collector Dissipation
TO-126
PC
10
W TO-220 40
TO-252 15
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65~+150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage VCEO
SUS
IC=30mA, IB=0A 100 V
Collector-Emitter Saturation Voltage VCE
SAT
I
C=2A, IB=8mA 2.5 V
Base-Emitter Turn-On Voltage VBE
ON
V
CE=4V, IC=2A 2.8
Collector-Base Cut-Off Current ICBO V
CB=100V, IE=0A 1 mA
Collector-Emitter Cut-Off Current ICEO V
CE=50V, VB=0A 2 mA
Emitter-Base Cut-Off Current IEBO V
EB=5V, IC=0A 2 mA
DC Current Gain hFE VCE=4V, IC=1A 1000
VCE=4V, IC=2A 500
Collector Capacitance COB V
CB=10V, IE=0A, f=0.1MHz 100 pF