NSR2030QMUTAG - ON SEMICONDUCTOR - Datasheet.Technology

May, 2017 − Rev. 1 Publication Order Number:

NSR2030QMU/D

NSR2030QMUTWG

2A, 30V Schottky Full Bridge

These full bridge Schottky barrier diodes are designed for the

rectification of the high speed signal of wireless charging. The

NSR2030QMUTWG has a very low forward voltage that will reduce

conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package

that is ideal for space constrained wireless applications.

Features

•Extremely Fast Switching Speed

•Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A

•These Devices are Pb−Free, Halogen Free and are RoHS Compliant

Typical Applications

•Low Voltage Full Bridge Rectification & Wireless Charging

MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) (Note 1)

Rating Symbol Value Unit

Reverse Voltage VR30 V

Forward Current (DC) IF2.0 A

Forward Current Surge Peak

(60 Hz, 1 cycle) IFSM 12.5 A

Non−Repetitive Peak Forward Current

(Square Wave, TJ = 25°C prior to surge)

t = 1 ms

t = 1 s

IFSM

3.0

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. All specifications pertain to a single diode.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR-5 Board

TA = 25°C

Derate above 25°C

(Note 2) 2.08

20.8

mW/°C

Thermal Resistance Junction to Ambient RqJA

(Note 2) 48 °C/W

Total Device Dissipation FR-5 Board

TA = 25°C

Derate above 25°C

(Note 3) 0.75

7.6

mW/°C

Thermal Resistance Junction to Ambient RqJA

(Note 3) 132 °C/W

Total Device Dissipation FR-5 Board

TA = 25°C

Derate above 25°C

(Note 4) 0.87

8.8

mW/°C

Thermal Resistance Junction to Ambient RqJA

(Note 4) 114 °C/W

Junction Temperature TJ+125 °C

Storage Temperature Range Tstg −55 to

+150 °C

2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm2, 1 oz. copper trace, still air.

3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 1 oz. copper trace, still air.

4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 2 oz. copper trace, still air.

MARKING

DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

UDFN4 3.5x3.5

CASE 517DA

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NSR2030QMUTWG UDFN4

(Pb−Free) 3000 / Tape &

Reel

2030

AYWWG

2030 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

PIN CONNECTIONS

DEVICE SCHEMATIC

NSR2030QMUTWG

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 5)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage (IR = 1.0 mA) V(BR) 30 − − V

Reverse Leakage (VR = 30 V) IR− 5.0 20 mA

Forward Voltage (IF = 0.5 A) VF− 0.41 0.455 V

Forward Voltage (IF = 1.0 A) VF− 0.46 0.55 V

Forward Voltage (IF = 2.0 A) VF− 0.54 0.65 V

Reverse Recovery Time

(IF = IR = 10 mA, IR(REC) = 1.0 mA) trr − 34 − ns

Input Capacitance (pins 1 to 3) (VR = 1.0 V, f = 1.0 MHz) CT− 102 − pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. All specifications pertain to a single diode.

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2.0 k

820 W

0.1 mF

D.U.T.

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

trtpt

10%

90%

trr t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

NSR2030QMUTWG

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Forward Voltage Figure 2. Reverse Leakage

Figure 3. Input Capacitance Figure 4. Forward Surge Current

0.001

0.01

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6

1.0E−09

1.0E−07

1.0E−05

1.0E−01

5 10152025

IR, REVERSE CURRENT (mA)

125°C85°C

150°C

−55°C

25°C

150°C

85°C

25°C

125°C

100

0 5 10 15 20

1.0E−03

VR, REVERSE VOLTAGE (V)

IF, FORWARD CURRENT (A)

25 30

CI, INPUT CAPACITANCE (pF)

25 30

VR, REVERSE VOLTAGE (V)

VF, FORWARD VOLTAGE (V)

1.0E−10

1.0E−08

1.0E−06

1.0E−02

1.0E−04

−55°C

TA = 25°C

110 Based on square wave currents

TJ = 25°C prior to surge

0.001 0.01 0.1 1 10 100 1000

IFSM, FORWARD SURGE MAX CURRENT (A)

Tp, PULSE ON TIME (ms)

0.1

0.2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

r(t)

(°C/W)

PULSE TIME (s)

Figure 5. Thermal Response

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100

0.1

100

NSR2030QMUTWG

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PACKAGE DIMENSIONS

UDFN4 3.5x3.5, 1.55P

CASE 517DA

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN

0.05 AND 0.15 MM FROM THE TERMINAL TIP.

4. COPLANARITY APPLIES TO THE EXPOSED

PADS AS WELL AS THE TERMINALS.

5. POSITIONAL TOLERANCE APPLIES TO ALL

OF THE EXPOSED PADS.

SEATING

PLANE

D B

0.10 C

AA3

ÍÍ

PIN ONE

INDICATOR

2X 0.10 C

0.05 C

NOTE 3

DIM MIN MAX

MILLIMETERS

A0.45 0.55

A1 0.00 0.05

A3 0.13 REF

b0.35 0.45

D3.50 BSC

D2 1.15 1.25

E3.50 BSC

E2 2.25 2.35

e1.55 BSC

L0.35 0.55

E3 0.95 1.05

NOTE 4

TOP VIEW

SIDE VIEW

BOTTOM VIEW

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

F0.925 BSC

RECOMMENDED

G0.58 BSC

D3 1.35 1.45

0.10 BC

0.05 C

0.10 BC

NOTE 5

e/2

BOTTOM VIEW

SUPPLEMENTAL

DIMENSIONS: MILLIMETERS

3.80

2.52

0.63

12X

0.50

PITCH

1.55

1.60 1.40

0.56

0.925

1.20

1.17

0.75

NSR2030QMU/D

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