VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 1Document Number: 94292
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Schottky Rectifier, 2 x 15 A
FEATURES
150 °C TJ operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 15 A
VR45 V
VF at IFSee Electrical table
IRM max. 100 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 10 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform (per device) 30 A
VRRM 35/45 V
IFRM TC = 123 °C (per leg) 30 A
IFSM tp = 5 μs sine 1020
VF20 Apk, TJ = 125 °C 0.6 V
TJRange - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR3045CTPbF VS-MBR3045CT-N3 UNITS
Maximum DC reverse voltage VR45 45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg IF(AV) TC = 123 °C, rated VR
15
A
per device 30
Peak repetitive forward current per leg IFRM Rated VR, square wave, 20 kHz, TC = 123 °C 30
Non-repetitive peak surge current IFSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
1020
Surge applied at rated load conditions halfwave,
single phase, 60 Hz 200
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 5 mH 10 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 2Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
30 A TJ = 25 °C 0.76
V20 A TJ = 125 °C 0.6
30 A 0.72
Maximum instantaneous reverse current IRM (1) TJ = 25 °C Rated DC voltage 1mA
TJ = 125 °C 100
Threshold voltage VF(TO) TJ = TJ maximum 0.29 V
Forward slope resistance rt13.6 m
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 800 pF
Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ- 65 to 150 °C
Maximum storage temperature range TStg - 65 to 175
Maximum thermal resistance,
junction to case per leg RthJC DC operation 1.5
°C/W
Typical thermal resistance,
case to heatsink RthCS
Mounting surface, smooth and greased
Only for TO-220 0.50
Maximum thermal resistance,
junction to ambient RthJA DC operation
For D2PAK and TO-262 50
Approximate weight 2g
0.07 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB MBR3045CT
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 3Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
1.5
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.60 0.3 0.9 1.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
1
10
100
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
5040302010
0.01
0.001
TJ = 150 °C
1000
TJ = 50 °C
TJ = 100 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
1000
040
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
20
100
5030
10
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20 Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
PDM
t1
t2
0.01
100 10
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 4Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
015
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
120
5
See note (1)
10
150
Square wave (D = 0.50)
Rated VR applied
25
100
140 DC
20
110
130
0
015
6
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
5
3
25
15
9
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
2010
12
RMS limit
DC
100 1000
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
100
10 00010
1000
At any rated load condition
and with rated VRRM applied
following surge
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 5Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBR3045CTPbF 50 1000 Antistatic plastic tube
VS-MBR3045CT-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220AB PbF www.vishay.com/doc?95225
TO-220AB -N3 www.vishay.com/doc?95028
- Schottky MBR series
- Current rating (30 = 30 A)
- Voltage ratings (045 = 45 V)
- CT = Essential part number
Device code
62 43 5
MBR 30 45 CT PbF
1
VS-
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
1
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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MBR3045CT VS-MBR3045CTPBF MBR3045CT-1 VS-MBR3045CT-N3