GS9014
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88197
216-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current Gain Group A 60 —150
DC Current Gain BhFE VCE = 5V, IC= 1mA 100 —300 —
C 200 —600
D 400 —1000
Collector-Emitter Breakdown Voltage V(BR)CEO IC= 1mA, IB= 0 45 ——V
Collector-Base Breakdown Voltage V(BR)CBO IC= 100µA, IE= 0 50 ——V
Emitter-Base Breakdown Voltage V(BR)EBO IE= 100µA, IC= 0 5 ——V
Collector Cut-off Current ICBO VCB = 50V, IE= 0 ——50 nA
Emitter Cut-off Current IEBO VEB = 5V, IC= 0 ——50 nA
Collector-Emitter Saturation Voltage VCE(sat) IC= 100mA, IB= 5mA —0.14 0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC= 100mA, IB= 5mA —0.84 1.0 V
Base-Emitter ON Voltage VBE(on) VCE = 5V, IC = 2mA 0.58 0.63 0.70 V
Output Capacitance COB VCB = 10V, IE= 0, —2.2 3.5 pF
ƒ = 1 MHz
Gain-Bandwidth Product ƒTVCE = 5V, IC= 10mA 150 270 —MHz
Noise Figure NF VCE = 5V, IC= 0.2mA, —0.9 10 dB
ƒ = 1KHz, Rs = 2KΩ