ie wy 2N929-2N930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstarker Applications: Low noise AF amplifiers Besondere Merkmale: Features: @ Besonders rauscharm bei kleinen @ Very low noise at small collector Kollektorstrmen current @ RauschmaB < 4 dB @ Noise figure <4 dB Abmessungen in mm Dimensions in mm Kollektor mit Gehause verbunden Collector connected with case Normgehause Case 18 A3 DIN 41876 JEDEC TO 18 Gewicht - Weight max. 0,5 g Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung UcBpo 45 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung UcEO 45 Vv Collector-emitter voltage ~ Emitter-Basis-Sperrspannung VEBO 5 Vv Emitter-base voltage Kollektorstrom Io 30 mA Collector current Gesamtverlustleistung Total power dissipation lamb = 25C Prot 300 mw lease = 25C Pot 600 mw Sperrschichttemperatur tj 175 C Junction temperature Lagerungstemperaturbereich stg -65... +175 C Storage temperature range B 2/V.2.545/0875 A 1 4552 N 929 - 2 N 930 Warmewiderstande Thermal resistances Sperrschicht-Umgebung Junction ambient Sperrschicht-Gehause Junction case Statische KenngrBen DC characteristics lamb = 25C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current Uce =45V UcE = 45V, lamb 175C Emitterreststrom Emitter cut-off current Veg =5V Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Io = 10 mA Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage Tg =10nA Kollektor-Sattigungsspannung Collector saturation voltage Ig = 10 mA, Ip =0,5mA Basis-Sattigungsspannung Base saturation voltage Io =10 mA, Ip =0,5mA Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio UcE =5Vilo= 10 pA 2N 929 2N 930 UcgE =8Vi Io = 101A, tamb = ~55C UcE =5V, Io = 500 pA Uce = 5Vi Io = 10mA *) AQL = 0,65%, **) AQL = 2,5%, 456 2N929 2N 930 2N 929 2N 930 2N929 2N 930 'p Min. Typ. Rihua Rthuc IcBo*) ICES . Ices *") TEBO Upryceo*)) 45 UpryeBO*) 5 UceEsat*) UBEsat *) hee) 40 hee *) 100 EE **) 10 hee **) 20 hee 60 Are 150 AEE 100 hee 200 rT 0,01, tp = 0,3 ms Max. 500 250 10 10 10 10 120 300 350 600 C/W C/W nA nA HA nA2 N 929 - 2N 930 Dynamische Kenngr6Gen AC characteristics tamb = 25C Transitfrequenz Gain bandwidth product UceE =5V, Io =0,5 mA, St = 30 MHz Kollektor-Basis-Kapazitat Collector-base capacitance Ucp = 5V, f= 1 MHz RauschmaB Noise figure UcE =5 V, Io = 10 HA, Rg = 10 kQ, f = 30 Hz... 15 kHz 2N929 2N 930 Vierpol KenngrBen Two port characteristics tamb = 25C Basisschaltung Common base configuration Ucg = 5V.ig=1mA, f =1kHz KurzschluB-Eingangswiderstand Short circuit input resistance Leerlauf-Spannungsriickwirkung Open circuit reverse voltage transfer ratio KurzschluB-Stromverstarkung Short circuit forward current transfer ratio Leerlauf-Ausgangsleitwert Open circuit output conductance ST CcBo hip hob Min. 30 25 150 Typ. Max. MHz 8 pF 4 dB 3 dB 32 Q 6 - 10% 600 1,0 ys 457