BFQ19S Low Noise Silicon Bipolar RF Transistor * For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA * Pb-free (RoHS compliant) package * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFQ19S Marking FG Pin Configuration 1=B 2=C 3=E Package SOT89 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 120 Base current IB 12 Total power dissipation1) Ptot 1 W Junction temperature TJ 150 C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 V mA TS 85C Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1T S is 2For Value Unit 65 K/W measured on the collector lead at the soldering point to the pcb the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-03 BFQ19S Electrical Characteristics at T A = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 10 A ICBO - - 100 nA IEBO - - 100 A hFE 70 100 140 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V, pulse measured 2 2014-04-03 BFQ19S Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT 4 5.5 - Ccb - 1.05 1.35 Cce - 0.4 - Ceb - 3.9 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 20 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz - 1.8 - f = 1.8 GHz - 3 - IC = 70 mA, VCE = 8 V, ZS = ZSopt, Z L = ZLopt, f = 900 MHz - 11.5 - f = 1.8 GHz - 7 - Power gain, maximum available1) Gma |S21e|2 Transducer gain dB IC = 30 mA, VCE = 8 V, ZS = Z L = 50, f = 900 MHz - 9.5 - f = 1.8 GHz - 4 - IP3 - 32 - P-1dB - 22 - Third order intercept point at output2) dBm VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz 1dB Compression point VCE = 8 V, IC = 70 mA, ZS = ZSopt , ZL = ZLopt, f = 1.8 GHz 2 1/2 ma = |S21 /S12| (k-(k -1) ) 1G 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.2 MHz to 12 GHz 3 2014-04-03 BFQ19S Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 2 1200 mW 1000 K/W RthJS Ptot 900 800 700 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = (tp ) P totmax/PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2014-04-03 BFQ19S SPICE GP model For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. 5 2014-04-03 Package SOT89 6 BFQ19S 2014-04-03 BFQ19S Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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