7-985
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
CD4068BMS
CMOS 8 Input NAND/AND Gate
Pinout CD4068BMS
TOP VIEW
Functional Diagram
K = A · B · C · D · E · F · G · H
A
B
C
D
NC
VSS
VDD
J = A · B · C · D · E · F · G · H
H
G
F
E
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
NC = NO CONNECTION
12
11
10
9
2
3
4
5
A
B
C
D
E
F
G
H
13 J
K
1
J = A · B · C · D · E · F · G · H
K = A · B · C · D · E · F · G · H
VDD = 14
VSS = 7
6, 8 = NO CONNECTION
Features
• High Voltage Type (20V Rating)
• Medium Speed Operation
- TPHL, TPLH = 75ns (Typ.) at VDD = 10V
• Buffered Inputs and Outputs
• 5V, 10V and 15V Parametric Ratings
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Description
CD4068BMS NAND/AND gate provides the system designer
with direct implementation of the positive logic 8 Input NAND and
AND functions and supplements the existing family of CMOS
gates.
The CD4068BMS is supplied in these 14 lead outline packages:
Braze Seal DIP H4H
Frit Seal DIP H1B
Ceramic Flatpack H3W
December 1992
Logic Diagram
FIGURE 1. LOGIC DIAGRAM
13 J
1K
2
A
3
B
4
C
5
D
9
E
10
F
11
G
12
H
File Number 3320
7-986
Specifications CD4068BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . . θja θjc
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K). . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 0.5 µA
2 +125oC-50µA
VDD = 18V, VIN = VDD or GND 3 -55oC - 0.5 µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
(Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
Input Voltage High
(Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
Input Voltage Low
(Note 2) VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC- 4 V
Input Voltage High
(Note 2) VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC11 - V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-987
Specifications CD4068BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTES 1, 2) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Propagation Delay TPHL
TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 300 ns
10, 11 +125oC, -55oC - 405 ns
Transition Time TTHL
TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns
10, 11 +125oC, -55oC - 270 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.25 µA
+125oC - 7.5 µA
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA
+125oC-15µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 µA
+125oC-30µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC-50mV
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC-50mV
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC4.95 - V
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC9.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
-55oC 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
-55oC 4.2 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
-55oC - -0.64 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
-55oC - -2.0 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
-55oC - -2.6 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
-55oC - -4.2 mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL <
1V 1, 2 +25oC, +125oC,
-55oC-3V
7-988
Specifications CD4068BMS
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL <
1V 1, 2 +25oC, +125oC,
-55oC7-V
Propagation Delay TPHL
TPLH VDD = 10V 1, 2, 3 +25oC - 150 ns
VDD = 15V 1, 2, 3 +25oC - 110 ns
Transition Time TTHL VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25oC - 80 ns
Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 2.5 µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage
Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage
Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL
TPLH VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x
+25oC
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER SYMBOL DELTA LIMIT
Supply Current - SSI IDD ±0.1µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
7-989
Specifications CD4068BMS
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS MIL-STD-883
METHOD
TEST READ AND RECORD
PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD 9V ± -0.5V
OSCILLATOR
50kHz 25kHz
Static Burn-In 1
Note 1 1, 6, 8, 13 2-5, 7, 9-12 14
Static Burn-In 2
Note 1 1, 6, 8, 13 7 2-5, 9-12, 14
Dynamic Burn-
In Note 1 6, 8 7 14 1, 13 2-5, 9-12
Irradiation
Note 2 1, 6, 8, 13 7 2-5, 9-12, 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V ± 0.5V
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
7-990
CD4068BMS
Schematic
FIGURE 2. SCHEMATIC DIAGRAM
11
12
10
9
*
n n n n
p
p
p
p
*
*
*
VSS
p p
n
n
VSS
n
p
VSS
VDD
VDD
n
p
13
n
p
VSS
VDD
1
n
p
VSS
VDD
3
2
4
5
*
n n n n
p
p
p
p
*
*
*
VDD
VDD
ALL INPUTS PROTECTED BY
*CMOS PROTECTION NETWORK
VDD
VSS
DETAIL OF INVERTERS
INVERTERS
7-991
CD4068BMS
Typical Performance Characteristics
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A
FUNCTION OF LOAD CAPACITANCE
10V
5V
AMBIENT TEMPERATURE (T A) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = 15V
0 5 10 15
15
10
5
20
25
30
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
10V
5V
AMBIENT TEMPERATURE (T A) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = 15V
0 5 10 15
7.5
5.0
2.5
10.0
12.5
15.0
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
-10V
-15V
AMBIENT TEMPERATURE (T A) = +25oC
GATE-TO-SOURCE VOLT AGE (VGS) = -5V
0
-5
-10
-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-20
-25
-30
0-5-10-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-15V
AMBIENT TEMPERATURE (T A) = +25oC0
-5
-10
-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 0-5-10-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
GATE-TO-SOURCE VOLT AGE (VGS) = -5V
AMBIENT TEMPERATURE (T A) = +25oC
LOAD CAPACITANCE (CL) (pF)
0 40 60 80 10020
0
50
100
150
200
SUPPLY VOLT AGE (VDD) = 5V
10V
15V
TRANSITION TIME (tTHL, tTLH) (ns)
LOAD CAPACITANCE (CL) (pF)
0
25
10 20 30 40 50 60 70 80 90 100
50
75
100
125
150
175
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
10V
15V
AMBIENT TEMPERATURE (T A) = +25oC
SUPPLY VOLT AGE (VDD) = 5V
992
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CD4068BMS
FIGURE 9. TYPICAL VOLTAGE TRANSFER
CHARACTERISTICS (NAND OUTPUT) FIGURE 10. TYPICAL DYNAMIC POWER DISSIPATION AS A
FUNCTION OF FREQUENCY
Chip Dimensions and Pad Layout
Dimensions in parenthesis are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch).
METALLIZATION: Thickness: 11kÅ−14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
Typical Performance Characteristics (Continued)
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE (VDD) = 15V
10V
5V
15
10
5
0 5 10 15 20 25
INPUT VOLTAGE (VI) (V)
OUTPUT VOLTAGE (VO) (V)
CL = 15pF
CL = 50pF
10V
5V
10V
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE (VDD) = 15V
105
103
10
POWER DISSIPATION (PD) (µW)
102
104
INPUT FREQUENCY (fI) (kHz)
11010
2103104
(ONE OUTPUT LOADED)
8642864286428642
8
6
4
2
8
6
4
2
8
6
4
2
8
6
4
2
