ON Semiconductor 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. * High Collector-Emitter Sustaining Voltage -- * * * 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) Low Collector-Emitter Saturation Voltage -- VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) Excellent Safe Operating Area -- 200 Watt dc Power Rating to 30 Vdc (2N5303) Complements to PNP 2N4398, 2N4399 and 2N5745 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII IIIIIIII III III IIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III *MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 80 Vdc VCB 40 60 80 Vdc Collector Current -- Continuous IC 30 30 20 Adc Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1.14 Watts W/C TJ, Tstg -65 to +200 C Collector-Emitter Voltage Collector-Base Voltage Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case JC 0.875 C/W Thermal Resistance, Case to Ambient CA 34 C/W *Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (C) 160 180 200 Figure 1. Power Temperature Derating Curve Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 1 1 Publication Order Number: 2N5301/D 2N5301 2N5302 2N5303 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 -- -- -- -- -- -- 5.0 5.0 5.0 -- -- -- 1.0 1.0 1.0 -- -- -- 10 10 10 -- -- -- 1.0 1.0 1.0 -- 5.0 40 15 15 5.0 5.0 -- 60 60 -- -- -- -- -- -- -- -- 0.75 1.0 1.5 2.0 2.0 3.0 -- -- -- -- -- 1.7 1.8 2.0 2.5 2.5 -- -- -- -- 1.5 1.7 25 3.0 Unit *OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5301 2N5302 2N5303 Vdc ICEO mAdc ICEX mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) *(IC = 1.0 Adc, VCE = 2.0 Vdc) *(IC = 10 Adc, VCE = 2.0 Vdc) *(IC = 15 Adc, VCE = 2.0 Vdc) *(IC = 20 Adc, VCE = 4.0 Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) ALL TYPES 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 hFE *Collector-Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) 2N5301, 2N5302 2N5303 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 *Base Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) ALL TYPES 2N5301, 2N5302 2N5303 2N5301, 2N5302 2N5303 *Base-Emitter On Voltage (Note 1) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 -- VCE(sat) Vdc VBE(sat) Vdc VBE(on) http://onsemi.com 2 Vdc 2N5301 2N5302 2N5303 IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIII IIIIIIIIIIIIIIII I IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII IIIII III IIII III IIIIIII IIIIIIIIIIIIIIII IIIII III IIII III Characteristic Symbol Min Max Unit Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.0 -- MHz Small-Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 -- -- *DYNAMIC CHARACTERISTICS *SWITCHING CHARACTERISTICS Rise Time Storage Time ((VCC = 30 Vdc, dc, IC = 10 0 Adc, dc, IB1 = IB2 = 1.0 0 Adc) dc) Fall Time tr -- 1.0 s ts -- 2.0 s tf -- 1.0 s *Indicates JEDEC Registered Data. Note 1: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS INPUT PULSE tr 20 ns PW = 10 to 100 s DUTY CYCLE = 2.0% VCC INPUT PULSE tr 20 ns PW = 10 to 100 s DUTY CYCLE = 2.0% +30 V 3.0 +11 V 10 -2.0 V VCC 3.0 +11 V TO SCOPE tr 20 ns 0 -9.0 V 10 D VBB = 7.0 V Figure 2. Turn-On time Figure 3. Turn-Off time http://onsemi.com 3 +30 V TO SCOPE tr 20 ns r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2N5301 2N5302 2N5303 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.01 0.03 0.02 0.01 0.02 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.02 SINGLE PULSE 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME (ms) 20 30 50 100 200 300 1000 2000 500 Figure 4. Thermal Response 100 3000 100 s 20 10 5.0 2000 2N5303 5.0 ms 2N5301, 5302 1.0 ms TJ = 200C Secondary Breakdown Limited Bonding Wire Limited TC = 25C Thermal Limitations Pulse Duty Cycle 10% 2N5301 2N5302 2N5303 2.0 1.0 0.5 0.2 0.1 1.0 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 50 dc TJ = 25C 1000 Cib 500 200 50 2.0 3.0 5.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.5 100 Figure 5. Active-Region Safe Operating Area TJ = 25C IC/IB = 10 ts 1.0 1.0 0.7 0.5 t, TIME (s) t, TIME (s) 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.0 tr @ VCC = 30 V 0.3 30 50 TJ = 25C IB1 = IB2 IC/IB = 10 ts ts - 1/8 tf 0.7 0.5 tf @ VCC = 30 V 0.3 0.2 0.07 0.05 0.03 0.05 1.0 Figure 6. Capacitance versus Voltage 5.0 3.0 0.1 Cob 300 tf @ VCC = 10 V tr @ VCC = 10 V td @ VOB = 2.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 0.1 0.03 0.05 20 30 Figure 7. Turn-On Time 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-Off Time http://onsemi.com 4 10 30 300 hFE, DC CURRENT GAIN VCE = 10 V VCE = 2.0 V TJ = 175C 200 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5301 2N5302 2N5303 25C 100 70 50 -55C 30 20 10 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 2.0 TJ = 25C 1.6 0.8 0.4 0 0.01 0.02 IC = 2 x ICES 105 IC ICES 40 60 80 100 140 180 160 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 11. Effects of Base-Emitter Resistance Figure 12. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) IC, COLLECTOR CURRENT (A) 1.0 0 0.03 0.05 200 103 102 TJ = 175C 100C 101 25C 100 IC = ICES 10-1 10-2 10-3 -0.4 -0.3 REVERSE -0.2 -0.1 FORWARD 0 0.1 0.2 10 1.2 TJ, JUNCTION TEMPERATURE (C) VCE = 30 V 5.0 1.4 0.2 120 2.0 TJ = 25C 0.4 TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 20 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 1.6 IC = 10 x ICES 0 0.05 1.8 V, VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 107 102 20 A 2.0 VCE = 30 V 103 10 A Figure 10. Collector Saturation Region 108 104 5.0 A 1.2 Figure 9. DC Current Gain 106 IC = 2.0 A 0.3 0.4 0.5 0.6 10 +2.5 TJ = -55C to +175C +2.0 +1.5 +1.0 *APPLIES FOR IC/IB < +0.5 hFE@VCE 2.0V 2 *VC for VCE(sat) 0 -0.5 -1.0 VB for VBE(sat) -1.5 -2.0 -2.5 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 13. Collector Cut-Off Region Figure 14. Temperature Coefficients http://onsemi.com 5 30 30 2N5301 2N5302 2N5303 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M http://onsemi.com 6 INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N5301 2N5302 2N5303 Notes http://onsemi.com 7 2N5301 2N5302 2N5303 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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