SMBJ5.0 thru 188CA Surface Mount Transient Voltage Suppressors SYNSEMI SEMICONDUCTOR Peak Pulse Power GOOW Stand-off Voltage 5.0 to 188V Features @ Plastic package has Underwriters Laboratory Flammability Classification 947-0 @ Low profile package with built-in strain relief for surface mounted applications @ Glass passivated junction @ Low incremental surge resistance, excellent clamping capability @ SOOW peak pulse power capability with a 10/1000us . waveform, repetition rate fduty cycle}: 0.01% DO-214AA (SMB) @ Very fastresponse time oe @ High temperature soldering guaranteed: S761 83 | ol 250C/10 seconds at terminals i | } 1474.73) ' | | 131848) q a 1874.75) | TET td 25) $05, 18) -_ Mechanical Data i \ @ Case JEDEC DO-2144A/ SMB J-Bend) molded plastic over 1032.61 passivated junction ara xs 1 ge iat | f @ Terminals: Solder plated, solderable per MIL-STD-70, od a Method 2026 asia) oe oat @ Polarity: For unidirectional types the band denotes the cathode, which is positive with respect to the anode under narmal TVS = aan _ operation Dimensions in inches and (millimeters) @ Weight 0.00307. 0.093q Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. SMBI1TOCA). Electrical characteristics apply in both directions. Maximum Ratings and Thermal Characteristics (Ratings at 2590 arnbientternperature unless othenaise specified.) Parameter Symbol Value Unit ere eee Pm | _miirumono | w Peak pulse current with a 10/1 000us wavetornmn lea See Next Table A Peak fonvard sume current 8.3ms single half sine-waye uni-directional onty #! su 100 A Typical thernal resistance, junctionte arnbiert (4 Pau 400 er Typical thennal resistance, junction to lead Ren 20 eon Operating junction and storage temperature range Tei Gad -65 to +160 oS Notes: 1. Nor-repetitive current pulse, per Fig.3 and derated above T,=26C per Fig. 2 2, Mountecdon 2 0.2"(6.02 5.0 mir copper pads to each terminal 3. Mounted on minimum recommended pad layoutSMBJ5.0 thru 188CA Electrical Characteristics Ratings at 26C ambient termperature unless otherwise specified. Vv =3.5 atl 504 (unidirectional only) Maximum Maximum Deseret aealeen voltage reverse peak pulse | Maximum Sah {volts} a Test Stand-off kakage surge chmping current yoltage at Vea, current voltage atl, Vis Le len atl... Device Type UNI Bl Min. Max. {mA} {Volts} (wA} {A} ,, (olts) SMMBJIS.0 Ko AG 640 82 14 6.0 acid 62.5 9.6 SMBJIS.GA (4 KE AE 640 FOF 10 6.0 aog 65.2 a2 SMBIG.0 KF AF 6.67 8.15 10 6.0 800 52.6 114 SMBIE.GA, KS AG Gar .3F 10 6.0 Bog 683 10.3 SMBIG.5 KH AH F.2e a.62 10 6.6 500 40.8 12.3 SMBIG. 5A, KE AK Te 98 10 6.6 Bod 63.6 12 SMBJ?.0 KL AL 748 9.64 14 0) 200 451 13.3 SMB? GA, Et Alu 778 8.60 14 7.0 200 50.0 12.0 SMBJS?.6 Kh AM 6.93 12 1.0 #6 10 420 14.3 SMB? 5A, KP AP 6.93 94 1.0 76 re) 46.5 129 SMBJIE.0 KG AG 6.09 10.9 1.0 8.0 50) 40.0 16.9 SMBIE.A, KR AR 8.89 983 1.0 8.0 50) 44 13.6 SMBIE.5 KS AS Gdd 11.6 1.0 8.6 20) art 16.9 SMBIE.5A, KT AT Gadd 1i4 1.0 8.6 20 417 id4 SMBIS.0 Kl AU 19.0 12.2 1.0 9.0 10 36.5 16.9 SMBIS 0A, Kt AM 10.0 WA 1.0 9.0 10 39.0 16.4 SMBIIG KY AAU W144 13.6 1.0 10 5.0 41.9 18.8 SMBITO4, Ky AX W4 12.5 1.0 10 6.0 36.3 17.0 SMBII1 KY Aur 12.2 14.9 1.0 1 6.0 29.9 20.1 SMBII1A Kz Ag 12.2 13.6 1.0 1 6.0 33.0 182 SMBIT2 LO BD 13.3 16.3 1.0 12 6.0 274 22.0 SMBI1 24 LE BE 13.3 147 1.0 12 5.0 30.2 19.9 SMBII3 LF BF Idd 7.6 1.0 13 1.0 26.2 23.8 SMBIT 34 LS BS 144 16.9 1.0 13 1.4 27.9 21.6 SMBI14 LH BH 16.6 19.4 1.0 14 14 23.3 25.8 SMBI144 LK BE 16.6 2 1.0 14 1.0 26.9 23.2 SMBIT5 LL BL 16.7 204 1.0 16 1.0 22.4 26.9 SMBIT54, LM BM 167 16.6 1.0 16 1.0 44.5 44.4 SMBII6 LH BH 7.8 #18 1.0 16 14 20.8 28.8 SMBIT64, LF BP 7.8 17 1.0 16 1.4 23.4 25.0 SMBIV? La BQ 18.9 234 1.0 W 14 197 30.5 SMBITFA LR BR 18.9 20.9 1.0 WF 1.0 217 27.6 SMBITE LS BS 20.0 dd 1.0 18 1.0 184 2.2 SMBIT 84, LT BT 20.0 22.1 1.0 18 1.0 20.5 29.2 SMBJZ0 LU Bu 222 27 1.0 20 1.4 148 35.8 SMBIZO4, Ly BY 22.2 44.5 1.0 20 1.0 185 g2.4 SMBIZ2 Lay Buy edd 29.8 1.0 22 14 162 39.4 SMBIZ24, Lx Bx edd 26.9 1.0 22 1.0 169 36.5 SMBJ2d LY By 267 32.6 1.0 2d 1.0 14.0 43.0 SMBJ2d4, Lz Bz 267 29.5 1.0 ed 1.0 164 38.9 SMBIZ6 MD co 28.9 36.3 1.0 26 1.0 129 46.6 SMBIZ64, ME CE 28.9 319 1.0 26 1.0 14.3 421 SMBJIZ8 MIF CF 344 38.0 1.0 28 14 120 6O.0 SMBIZBA, MS cs 341 add 1.0 28 1.0 132 454 SMBJI0 MMH GH 33.3 407 1.0 30 1.0 11.2 63.5 SMBIIO4, hk CK 33.3 36.8 10 30 1.0 lad 464 Notes: 1. Vier measured after | applied for 300us square wave pulse or equivalent 2. Surge currentwaveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having V,,,,0F10 Valts and less, the |, limit is doubled 4, Allterms and symbols are consistentwith ANSWIEEE 082.35 5. For the bidirectional SMBJ65.0C.4, the maximum Vier is 7.25.SMBJ5.0 thru 188CA Electrical Characteristics Ratings at 26C ambient temperature unless otherwise specified. V=3.5'V at | =504 (uni-directional only} Maximum Maximum Maximum ; ; Breakdown voltage reverse peak pulse | clamping Device marking ee ' Test Stand-off eakage surge yoltage Gode {vols} current voltage at ,,, current at Isa atl, Vos Le Vent , Device type UNI BI Min. Max. (may {Volts} {uA} (Ay {Volts} SMBI33 MIL CL 367 44.9 4.0 33 1.0 10.2 69.0 SMBII34, hill ch 36.7 40.6 1.0 33 1.0 11.3 63.3 SMBI36 hit CN 40.0 46.9 1.0 36 1.0 9.3 64.3 SMBIS64 MIP CP 400 442 1.0 36 1.0 10.3 68.1 SMBId0 Mita ca ddd 64.3 1.0 40 1.0 a4 714 SMBI4 04, MR CR 444 494 1.0 40 1.0 a3 64.6 SMBId3 Mas cs 47.8 fed 1.0 43 1.0 7.8 FOF SMBI4 34 MT CT 47.8 62.8 7.0 43 1.0 4.6 6o4 SMBIG5 Mi cu 60.0 61.1 1.0 46 1.0 7.6 60.3 SMBIA54, he Cy 40.0 66.3 1.0 46 1.0 a3 fet SMBId8 fy cw 63.3 66.1 1.0 48 1.0 7.0 86.5 SMBJI434, fuse Cx 63.3 68.9 4.0 48 1.0 7.8 via4 SMIBJ51 Min cr 67 64.3 4.0 61 1.0 6.6 S14 SMBJ51A iz Cz fe? 627 4.0 61 1.0 7.3 g24 SMBI54 No Do 60,0 73.3 1.0 54 1.0 6.2 $6.3 SMBJI544, NE DE 0.0 66.3 1.0 od 1.0 6.9 ay. SMBJ58 HF DF G44 yar 4.0 68 1.0 6.8 103 SMBJ5B4, NS DG 84.4 712 4.0 68 1.0 a4 99.6 SMBIEO NH DH aay 81.5 1.0 aa 1.0 6.6 107 SMBIGOA NE DE ae? Fa7 4.0 a0 1.0 a2 96.6 SMBI64 AL DL Fld 86.9 1.0 Gd 1.0 6.3 114 SMBIG4A, Mn DM FAs 7a 1.0 ad 1.9 6.8 103 SMBIFO HN DN 77.8 96.4 1.0 7a 1.0 48 126 SMBIF OA, NP DP 778 86.0 1.0 7O 1.0 6.3 ek3 SMBIT5 Na ba 83.3 {02 1.0 76 1.0 4.6 134 SMBIF 5A NR DR 43.3 g24 4.0 Fis] 1.0 6.0 121 SMBITS NS DS 86.7 106 1.0 78 1.0 4.3 139 SMB? aa, NT DT aay 96.8 1.0 7a 1.9 4.8 126 SMBI85 HU BU Sd 4 115 1.0 a6 1.0 4.0 161 SMBJIB5A, hy by G44 104 4.0 86 1.0 44 13F SMBISO Nv bw 100 122 1.0 go 1.0 3.8 160 SMBISOA Be DE 100 411 1.0 go 1.0 44 146 SMBI1 00 NY DY 111 136 1.0 100 1.0 3.4 179 SMBI1 O04, Mz DZ 111 129 1.0 yoo 1.9 a? 162 SMBII10 Po FD 122 149 1.0 110 1.0 3.1 196 SMBIT1 OA PE FE 122 136 1.0 410 1.0 a4 VF SMBI1 20 Pr FF 133 183 4.0 120 1.0 2.8 214 SMBIT 20.4, PS AS 133 147 4.0 120 1.0 3.1 193 SMBJI1 30 PH FH 144 176 1.0 139 1.0 2.6 231 SMBI1 30.4, PR FR 144 169 1.0 130 1.9 2.9 209 SMBI1 50 PL FL 1467 204 1.0 160 1.0 a2 268 SMBI1 50.4, PR FIM 1467 186 1.0 160 1.0 2.6 243 SMB 80 PR FR 178 218 1.0 160 1.0 21 27 SMB 60,4, PP FP 1738 197 1.0 160 1.0 2.3 259 SMBIT70 Po FQ 199 231 1.0 179 1.0 2.0 304 SMBI1 704, PR FR 189 209 1.0 179 1.0 2.2 275 SMBI1 88 PS FS 20g 255 1.0 188 1.9 Va add SMBI1 88.4, PT FT 208 231 1.0 188 1.0 2.0 328 Notes: 1. View measured after | applied tor 300us square wave pulse or equivalent 2 Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bidirectional types having V,,, of 10 Volts and less, the |, limit is doubled 4. Allternms and symbols are consistent with ANSVIEEE C236RATINGS AND CHARACTERISTIC CURVES SMBJ5.0 thru 188CA (T, = 25C unless otherwise notech Prey Peak Pulse Power (kW) lppa Peak Pulse Current, % lasm Transient Thermal Impedance (jC/W) Fig. 1 Peak Pulse Power Rating Curve 100 10 | O1ps 1,.0us acer rome! 0.2% 0.2" (0.5 x 0.5mm) Pad Areas 10ps ty Pulse Width (sec.) 100us: 1.0m. 10ms Fig. 3- Pulse Waveform 150 L tr = 10usec. | T T T Ty= 25C Pulse Width (td) is defined as the point 100 Peak Value Le IPP where the peak current decays to 50% of IPP IPPM Hall Value IPP 2 10/1000usec. Waveform as defined by F.E.A. a = 10 1.0 01 0,001 1.0 2.0 3.0 4.9 t Time (ms) Fig. 5 Typical Transient Thermal Impedance 0.01 o1 1 10 100: 7000 tg Pulse Duration (sec) Fig. 2 -Pulse Derating Curve 100: 8 om Derating in Percentage, % Peak Pulse Power (Per) or Current (IPP) Ri 0 oO 26 50 75 100 125 1500 175) 200 Ta Ambient Temperature (C) Fig. 4 Typical Junction Capacitance = Measured at _ Zero Blas LL & g 1,000 3 o & ae Va, Measured at 8 100 Stand-Otf 4 Voltage, Vat 4 Uni-Directional Ty = 26C --=- Bi-Directional 1 = 1,0MHz Vsig = 50mVp-p 10 1 10 100 200 Vm Reverse Stand-Off Voltage (V) Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current = 200 = 8.3ms Single Half Sine-Wave = (JEDEC Method} E Unidirectional Only 3 100 Z 3 a | = = = a 10 100 Number of Cycles at 6OHz