PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. High isolation voltage 5300 VAC RMS1 minute 7500 VAC PEAK1 minute @ High BV ceo minimum 70 volts @ Current transfer ratio in selected groups: MOC8111: 20% min. MOC8112: 50% min. MOC8113: 100% min. = Maximum switching time in saturation specified a Underwriters Laboratory (UL) recognized File #E90700 040 DIMENSIONS IN mm PACKAGE CODE K ST1603A Power supply regulators Digital logic inputs Microprocessor inputs anooe(i] )Base Appliance sensor systems Industrial controls cat {2| /s}cou 2 b B Equivalent Circuit /4] EMIT. C2079A TOTAL PACKAGE INPUT DIODE Storage temperature .............. 56C to 150C} =9>ForwardDC current ..................0000, 90 mA Operating temperature ............ 58C to 100C = Reverse voltage ........ 6. cece 6V Lead temperature Peak forward current (soldering, 10 sec) ....... 0... ee eee 260C (1 us pulse, 300 pps) .................0085 3.0A Total package power dissipation @ 25C Power dissipation 25C ambient ........... 135 mW (LED plus detector) ...............002.. 260 mW __sODerate linearly from 25C ............... 1.8mWw/C Derate linearly from 25C ....2. 0. eee 3.5 mW/C OUTPUT TRANSISTOR Power dissipation @ 25C ................ 200 mW Derate linearly from 25C .............. 2.67 MW/CDPTOELECTAONICS SYMBOL PHOTOTRANSISTOR OPTOCOUPLERS Oe TEST CONDITIONS ian CHARACTERISTIC INPUT DIODE Forward voltage Ve 1.3 1.50 Vv |-=60 mA Forward voltage temp. AV, coefficient AT, -18 mv/C Reverse voltage Ve 6.0 15 Vv Ip=10 pA Junction capacitance C, 50 pF V.=0V, f=1 MHz 65 pF Ve=1 V, f=1 MHz Reverse leakage current la 35 10 uA Va=3.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVeeo 70 Vv |=1.0 mA, |;-=0 Emitter to collector BVeco 7 Vv p= 100zA, |-=0 Leakage current Collector to emitter leeo 5 50 nA Voce=10 V, 1. =0 Capacitance Collector to emitter 8 pF Vee=0, f=1 MHz TRANSFER CHARACTERISTICS MAX. UNITS TEST CONDITIONS DC CHARACTERISTICS SYMBOL MIN. TYP. Current Transfer Ratio, collector to emitter CTR % lF=10 MA; Voe=5 V MOC8111 20 MOC8112 50 MOC8113 100 Saturation voltage Veeisan 0.27 40 Vv -=10 mA; |,=2.5 mA "AC CHARACTERISTICS as SYMBOL MIN. MAX. UNITS TEST CONDITIONS SWITCHING TIMES Non-saturated L=100 0; k=2 mA; Turn-on time ton 6.0 10 vs Veo=10V Turn-off time tor 5.5 10 ps See Fig. 10.OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS AC CHARACTERISTICS i. = . TEST CONDITIONS SATURATED SWITCHING TIMES Turn-on time mn MOC8111 3.0 5.5 BS -=20 mA, Vce=0.4 V MOC8112, MOC8113 4.2 8.0 BS |-=10 MA, Vce=0.4 V Rise-time t MOC8111 2.0 4.0 ys l-=20 mA, Vac=0.4 V MOC8112, MOC8113 3.0 6.0 BS =10 MA, Vae=0.4 V Turn-off time tort MOC8111 18 34 uS l-=20 mA, Voe=0.4 V MOC81 12, MOC8113 23 39 BS l-=10 MA, Vce=0.4 V Fall-time t MOC8111 1 20 1) 1-=20 mA, Vce=0.4 V MOC8112, MOC8113 14 24 Bs [-=10 MA, Voe=0.4 V CHARACTERISTICS SYMBOL . . . TEST CONDITIONS Isolation voltage Viso lo<1 pA, 1 minute ho1 pA, 1 minute Isolation resistance Vi0=500 VDC lsolation capacitance . f=1 MHz ~ 14 + K Lo 1.25 13 ! es Je wee = 0.3V > _ =| 3 ce = 5.0V uw T= -58C 7 LT Fle 1.0 Pt cea a = yebt ott a) Ok >! | ea 2 m ud g 11 OT = +25 a Lat 0.75 f; tad | kK a oO o S 1.0 Lal. 2 0.50 - a T= | 1 uu a lr a $ 09 | t , _| z x a . 2 0.25 2 2 5 0.8 ) ! 2 0102 05 1 2 5 10 20 50 100 0 FORWARD CURRENT Ir (mA) 0 5 10 15 20 C1686 IF (mA) C1679 Fig. 1. Forward Voltage vs. Fig. 2. Normalized CTR vs, Current Forward CurrentOPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS AC CHARACTERISTICS i. = . TEST CONDITIONS SATURATED SWITCHING TIMES Turn-on time mn MOC8111 3.0 5.5 BS -=20 mA, Vce=0.4 V MOC8112, MOC8113 4.2 8.0 BS |-=10 MA, Vce=0.4 V Rise-time t MOC8111 2.0 4.0 ys l-=20 mA, Vac=0.4 V MOC8112, MOC8113 3.0 6.0 BS =10 MA, Vae=0.4 V Turn-off time tort MOC8111 18 34 uS l-=20 mA, Voe=0.4 V MOC81 12, MOC8113 23 39 BS l-=10 MA, Vce=0.4 V Fall-time t MOC8111 1 20 1) 1-=20 mA, Vce=0.4 V MOC8112, MOC8113 14 24 Bs [-=10 MA, Voe=0.4 V CHARACTERISTICS SYMBOL . . . TEST CONDITIONS Isolation voltage Viso lo<1 pA, 1 minute ho1 pA, 1 minute Isolation resistance Vi0=500 VDC lsolation capacitance . f=1 MHz ~ 14 + K Lo 1.25 13 ! es Je wee = 0.3V > _ =| 3 ce = 5.0V uw T= -58C 7 LT Fle 1.0 Pt cea a = yebt ott a) Ok >! | ea 2 m ud g 11 OT = +25 a Lat 0.75 f; tad | kK a oO o S 1.0 Lal. 2 0.50 - a T= | 1 uu a lr a $ 09 | t , _| z x a . 2 0.25 2 2 5 0.8 ) ! 2 0102 05 1 2 5 10 20 50 100 0 FORWARD CURRENT Ir (mA) 0 5 10 15 20 C1686 IF (mA) C1679 Fig. 1. Forward Voltage vs. Fig. 2. Normalized CTR vs, Current Forward CurrentOPTOELECTRONICS NORMALIZED SWITCHING TIME PHOTOTRANSISTOR OPTOCOUPLERS o oa tic lig = ama o a ton, tof} T Voce = 10V Rt = 1000 (See Fig, 10) OUTPUT 10 15 - Ic (mA) C1296A Fig. 5. Switching Time Fig. 6. Switching Time vs. IC Test Circuit PULSE WIDTH = 100 zs DUTY CYCLE = 10% aD | I ! OUTPUT | I I | | 1 | i i dot { P| ton rm torr p< C1294 Fig. 7. Switching Time Waveforms