2009. 6. 22 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC846/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
·High Voltage : BC846 VCEO=65V.
·For Complementary With PNP Type BC856/857/858.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
TYPE BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C
MARK 1A 1B 1E 1F 1G 1J 1K 1L
MARK SPEC
Type Name
Marking
Lot No.
PC* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC846
VCBO
80
VBC847 50
BC848 30
Collector-Emitter
Voltage
BC846
VCEO
65
VBC847 45
BC848 30
Emitter-Base Voltage
BC846
VEBO
6
VBC847 6
BC848 5
Collector Current
DC IC100
mA
PULSE ICP 200
Base Current IB20 mA
Emitter Current IE-100 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
2009. 6. 22 2/3
BC846/7/8
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25℃)
NOTE : According to the value of hFE the BC846, BC847, BC848 are classified as follows.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
DC Current Gain (Note)
BC846
hFE VCE=5V, IC=2mA
110 - 450
BC847 110 - 800
BC848 110 - 800
Collector-Emitter Saturation Voltage
VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25
V
VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6
Base-Emitter Saturation Voltage
VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 -
V
VBE(sat) 2 IC=100mA, IB=5mA - 0.9 -
Base-Emitter Voltage
VBE(ON1) VCE=5V, IC=2mA 0.58 - 0.7 V
VBE(ON2) VCE=5V, IC=10mA - - 0.75 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA
Rg=10kΩ, f=1kHz - 1.0 10 dB
CLASSIFICATION A B C
hFE
BC846 110～220 200～450 -
BC847 110～220 200～450 420～800
BC848 110～220 200～450 420～800
2009. 6. 22 3/3
BC846/7/8
Revision No : 4
C
COLLECTOR CURRENT I (mA)
0
COLLECTOR CURRENT I (mA)
C
0.1
0.2
BASE-EMITTER VOLTAGE V (V)
BE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V I - V
COLLECTOR-BASE VOLTAGE V (V)
CAPACITANCE C (pF)
ob
10
1
13
20
CB
10 30
C - V
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
13
FE
10 30
C
h - I
4 8 12 16 20
20
40
60
80
100
I =400µA
B
I =350µA
B
I =50µA
B
I =100µA
B
I =150µA
B
I =200µA
B
I =250µA
B
I =300µA
B
CBE
0.4 0.6 0.8 1.0
0.3
0.5
1
3
5
10
30
50
100
V =5V
CE
FE C
100 300 1k
10
30
50
100
300
500
1k
SATURATION VOLTAGE
10
COLLECTOR CURRENT I (mA)
1
0.01
0.03
0.1
330030 100
C
1
K
BE(sat)
0.3
1
V , V - I
BE(sat) CCE(sat)
V , V (V)
CE(sat)
3
10 I /I =20
CB
VBE(sat)
VCE(sat)
ob CB
100
3
5
f=1MHz
I =0
E
V =5V
CE
