SEMICONDUCTOR BC846/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B L L FEATURES D *High Voltage : BC846 VCEO=65V. 2 H A 3 G *For Complementary With PNP Type BC856/857/858. 1 Q P RATING BC846 Collector-Base Voltage UNIT N 80 VCBO BC847 50 BC848 30 BC846 65 J SYMBOL P K CHARACTERISTIC C MAXIMUM RATING (Ta=25) V DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR Collector-Emitter VCEO BC847 Voltage Emitter-Base Voltage 45 BC848 30 BC846 6 VEBO BC847 6 BC848 V SOT-23 V 5 DC IC 100 PULSE ICP 200 Base Current IB 20 mA Emitter Current IE -100 mA PC * 350 mW Tj 150 Tstg -55150 Collector Current mA Marking Lot No. Type Name Collector Power Dissipation Junction Temperature Storage Temperature Range PC* : Package Mounted On 99.5% Alumina 10x8x0.6mm. MARK SPEC TYPE BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C MARK 1A 1B 1E 1F 1G 1J 1K 1L 2009. 6. 22 Revision No : 4 1/3 BC846/7/8 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=30V, IE=0 BC846 DC Current Gain (Note) BC847 hFE VCE=5V, IC=2mA BC848 MIN. TYP. MAX. UNIT - - 15 nA 110 - 450 110 - 800 110 - 800 VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6 VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 - VBE(sat) 2 IC=100mA, IB=5mA - 0.9 - VBE(ON1) VCE=5V, IC=2mA 0.58 - 0.7 V VBE(ON2) VCE=5V, IC=10mA - - 0.75 V VCE=5V, IC=10mA, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF - 1.0 10 dB Collector-Emitter Saturation Voltage V Base-Emitter Saturation Voltage V Base-Emitter Voltage fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF VCE=6V, IC=0.1mA Rg=10k, f=1kHz NOTE : According to the value of hFE the BC846, BC847, BC848 are classified as follows. CLASSIFICATION hFE 2009. 6. 22 A B C BC846 110220 200450 - BC847 110220 200450 420800 BC848 110220 200450 420800 Revision No : 4 2/3 BC846/7/8 C - V CE I C - V BE 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I I B =400A I B =350A I B =300A 80 I B =250A 60 I B =200A I B =150A 40 I B =100A 20 I B =50A 0 100 VCE =5V 50 30 10 5 3 1 0.5 0.3 0.1 0 4 8 12 16 20 0.2 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C VBE(sat) , V CE(sat) - I 1k C 10 I C /I B =20 V CE =5V 500 SATURATION VOLTAGE V BE(sat) , V CE(sat) (V) DC CURRENT GAIN h FE 0.4 300 100 50 30 10 3 1 V BE(sat) 0.3 0.1 V CE(sat) 0.03 0.01 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) C ob - V CB CAPACITANCE C ob (pF) 20 f=1MHz I E =0 10 5 3 1 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CB (V) 2009. 6. 22 Revision No : 4 3/3