VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Ultralow VF Hyperfast Rectifier
for Discontinuous Mode PFC, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
PRODUCT SUMMARY
Package TO-220AC, TO-220FP
IF(AV) 8 A
VR600 V
VF at IF1.05 V
trr typ. 60 ns
TJ max. 175 °C
Diode variation Single die
TO-220AC TO-220 FULL-PA
K
Anode
13
Cathode
Base
cathode
2
Anode
13
Cathode
VS-8ETL06PbF VS-8ETL06FPPbF
VS-8ETL06-N3 VS-8ETL06FP-N3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage VRRM 600 V
Average rectified forward current IF(AV)
TC = 160 °C 8
A
FULL-PAK TC = 142 °C
Non-repetitive peak surge current IFSM TJ = 25 °C 175
Repetitive peak forward current IFM 16
Operating junction and storage temperatures TJ, TStg - 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 600 - -
V
Forward voltage VF
IF = 8 A - 0.96 1.05
IF = 8 A, TJ = 150 °C - 0.81 0.86
Reverse leakage current IR
VR = VR rated - 0.05 5 μA
TJ = 150 °C, VR = VR rated - 20 100
Junction capacitance CTVR = 600 V - 17 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Revision: 02-Jan-12 2Document Number: 94028
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 100
ns
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 150 250
TJ = 25 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 390 V
- 170 -
TJ = 125 °C - 250 -
Peak recovery current IRRM
TJ = 25 °C - 15 - A
TJ = 125 °C - 20 -
Reverse recovery charge Qrr
TJ = 25 °C - 1.3 - μC
TJ = 125 °C - 2.6 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg - 65 - 175 °C
Thermal resistance,
junction to case RthJC -1.42
°C/W
(FULL-PAK) - 3.4 4.3
Thermal resistance,
junction to ambient per leg RthJA Typical socket mount - - 70
Thermal resistance,
case to heatsink RthCS
Mounting surface, flat, smooth
and greased -0.5-
Weight -2.0- g
-0.07- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AC 8ETL06
Case style TO-220 FULL-PAK 8ETL06FP
1
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
0.4 0.8
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
1.2 1.6 2.0
0.1
0.01
0.1
1
10
100
100 200 400
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
300
0.001
600500
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = 50 °C
TJ = 75 °C
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Revision: 02-Jan-12 3Document Number: 94028
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
100
0 200 400 500 600
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
300100
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
Single pulse
(thermal resistance)
10 100
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Revision: 02-Jan-12 4Document Number: 94028
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Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 10 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
02 6 10 14
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
150
160
48
165
170
175
180
155
Square wave (D = 0.50)
Rated VR applied
See note (1)
DC
12
02 6 10 14
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
80
100
48
120
140
160
180
Square wave (D = 0.50)
Rated VR applied
See note (1)
DC
12
02 6 1012
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
4
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
48
8
12
10
6
2
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
450
0
IF = 16 A
IF = 8 A
VR = 390 V
TJ = 125 °C
TJ = 25 °C
400
300
200
100
50
150
250
350
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
5000
500
IF = 16 A
IF = 8 A
3500
2500
1500
1000
VR = 390 V
TJ = 125 °C
TJ = 25 °C
4500
3000
2000
4000
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
www.vishay.com Vishay Semiconductors
Revision: 02-Jan-12 5Document Number: 94028
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Fig. 11 - Reverse Recovery Parameter Test Circuit
Fig. 12 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Revision: 02-Jan-12 6Document Number: 94028
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8ETL06PbF 50 1000 Antistatic plastic tube
VS-8ETL06-N3 50 1000 Antistatic plastic tube
VS-8ETL06FPPbF 50 1000 Antistatic plastic tube
VS-8ETL06FP-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions TO-220AC www.vishay.com/doc?95221
TO-220FP www.vishay.com/doc?95005
Part marking information
TO-220ACPbF www.vishay.com/doc?95224
TO-220AC-N3 www.vishay.com/doc?95068
TO-220FPPbF www.vishay.com/doc?95009
TO-220FP-N3 www.vishay.com/doc?95440
1- Vishay Semiconductors product
2- Current rating (8 = 8 A)
3- E = Single diode
4- T = TO-220, D2PAK
5- L = Ultralow VF hyperfast recovery
6- Voltage rating (06 = 600 V)
7- None = TO-220AC
FP = TO-220 FULL-PAK
8
Device code
5
132 4 6 7 8
VS- 8 E T L 06 FP PbF
PbF = Lead (Pb)-free and RoHS compliant
- Environmental digit:
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 20-Jul-11 1Document Number: 95005
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DIMENSIONS in millimeters
5° ± 0.5°
3.3
3.1
5° ± 0.5°
0.9
0.7
2.54 TYP.
2.54 TYP.
10.6
10.4
3.7
3.2 7.31
6.91
0.61
0.38
2.85
2.65
2.8
2.6
1.4
1.3
10°
4.8
4.6
16.0
15.8
16.4
15.4
(2 places)
R 0.7
R 0.5
Hole Ø 3.4
3.1
TYP.
1.15
1.05
13.56
13.05
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
