PZT2907AT/R - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Jun 02 1999 Apr 14

DISCRETE SEMICONDUCTORS

PZT2907A

PNP switching transistor

handbook, halfpage

M3D087

1999 Apr 14 2

Philips Semiconductors Product speciﬁcation

PNP switching transistor PZT2907A

FEATURES

•High current (max. 600 mA)

•Low voltage (max. 60 V).

APPLICATIONS

•Switching and linear amplification.

DESCRIPTION

PNP switching transistor in a SOT223 plastic package.

NPN complement: PZT2222A.

PINNING

PIN DESCRIPTION

1 base

2, 4 collector

3 emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

123

MAM288

Top view

2, 4

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−60 V

VCEO collector-emitter voltage open base −−60 V

VEBO emitter-base voltage open collector −−5V

Ccollector current (DC) −−600 mA

ICM peak collector current −−800 mA

IBM peak base current −−200 mA

Ptot total power dissipation Tamb ≤25 °C−1.15 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 14 3

Philips Semiconductors Product speciﬁcation

PNP switching transistor PZT2907A

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 106 K/W

Rth j-s thermal resistance from junction to soldering point 25 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =−50 V −−10 nA

IE= 0; VCB =−50 V; Tamb = 150 °C−−10 µA

IEBO emitter cut-off current IC= 0; VEB =−5V −−50 nA

hFE DC current gain IC=−0.1 mA; VCE =−10 V 75 −

IC=−1 mA; VCE =−10 V 100 −

IC=−10 mA; VCE =−10 V 100 −

IC=−150 mA; VCE =−10 V; note 1 100 300

IC=−500 mA; VCE =−10 V; note 1 50 −

VCEsat collector-emitter saturation voltage IC=−150 mA; IB=−15 mA; note 1 −−400 mV

IC=−500 mA; IB=−50 mA; note 1 −−1.6 V

VBEsat base-emitter saturation voltage IC=−150 mA; IB=−15 mA; note 1 −−1.3 V

IC=−500 mA; IB=−50 mA; note 1 −−2.6 V

Cccollector capacitance IE=i

e= 0; VCB =−10 V; f = 1 MHz −8pF

eemitter capacitance IC=i

c= 0; VEB =−2 V; f = 1 MHz −30 pF

fTtransition frequency IC=−50 mA; VCE =−20 V;

f = 100 MHz; note 1 200 −MHz

Switching times (between 10% and 90% levels); (see Fig.2)

ton turn-on time ICon =−150 mA; IBon =−15 mA;

IBoff =15mA −40 ns

tddelay time −12 ns

trrise time −30 ns

toff turn-off time −365 ns

tsstorage time −300 ns

tffall time −65 ns

1999 Apr 14 4

Philips Semiconductors Product speciﬁcation

PNP switching transistor PZT2907A

Fig.2 Test circuit for switching times.

handbook, full pagewidth

DUT

MGD624

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Vi=−9.5 V; T = 500 µs; tp=10µs; tr=t

f≤3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB= 325 Ω; RC= 160 Ω.

VBB = 3.5 V; VCC =−29.5 V.

Oscilloscope input impedance Zi=50Ω.

1999 Apr 14 5

Philips Semiconductors Product speciﬁcation

PNP switching transistor PZT2907A

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 96-11-11

97-02-28

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

1999 Apr 14 6

Philips Semiconductors Product speciﬁcation

PNP switching transistor PZT2907A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Apr 14 7

Philips Semiconductors Product speciﬁcation

PNP switching transistor PZT2907A

NOTES

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 14 Document order number: 9397 750 05637