4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M
Rev. 1.0.3
September 2009
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
General Purpose 6-Pin Photodarlington Optocoupler
Features
■
High sensitivity to low input drive current
■
Meets or exceeds all JEDEC Registered
Specifications
■
UL, C-UL approved,
File #E90700, Volume 2
■
IEC 60747-5-2 approved (ordering option V)
Applications
■
Low power logic circuits
■
Telecommunications equipment
■
Portable electronics
■
Solid state relays
■
Interfacing coupling systems of different potentials
and impedances
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
Schematic
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6BASE
N/C
6
1
6
6
1
1
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M
Rev. 1.0.3 2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
Storage Temperature -50 to +150 °C
T
OPR
Operating Temperature -40 to +100 °C
T
SOL
Lead Solder Temperature (Wave) 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 250 mW
Derate above 25°C 3.3 mW/°C
EMITTER
I
F
Continuous Forward Current 80 mA
V
R
Reverse Voltage 3 V
I
F
(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3.0 A
P
D
LED Power Dissipation @ T
A
= 25°C 150 mW
Derate above 25°C 2.0 mW/°C
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage 30 V
BV
CBO
Collector-Base Breakdown Voltage 30 V
BV
ECO
Emitter-Collector Breakdown Voltage 5 V
P
D
Detector Power Dissipation @ T
A
= 25°C 150 mW
Derate above 25°C 2.0 mW/°C
I
C
Continuous Collector Current 150 mA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M
Rev. 1.0.3 3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage* I
F
= 10mA 4NXXM 1.2 1.5 V
H11B1M,
TIL113M
0.8 1.2 1.5
I
R
Reverse Leakage Current* V
R
= 3.0V 4NXXM 0.001 100 µA
V
R
= 6.0V H11B1M,
TIL113M
0.001 10
C Capacitance* V
F
= 0V, f = 1.0MHz All 150 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0 4NXXM,
TIL113M
30 60 V
H11B1M 25 60
BV
CBO
Collector-Base Breakdown Voltage* I
C
= 100µA, I
E
= 0 All 30 100 V
BV
ECO
Emitter-Collector Breakdown Voltage* I
E
= 100µA, I
B
= 0 4NXXM 5.0 10 V
H11B1M,
TIL113M
710
I
CEO
Collector-Emitter Dark Current* V
CE
= 10V, Base Open All 1 100 nA
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
DC CHARACTERISTICS
I
C(CTR)
Collector Output Current*
(1, 2)
I
F
= 10mA, V
CE
= 10V,
I
B
= 0
4N32M,
4N33M
50 (500) mA (%)
4N29M,
4N30M
10 (100)
I
F
= 1mA, V
CE
= 5V H11B1M 5 (500)
I
F
= 10mA, V
CE
= 1V TIL113M 30 (300)
V
CE(SAT)
Saturation Voltage*
(2)
I
F
= 8mA, I
C
= 2.0mA 4NXXM 1.0 V
TIL113M 1.25
I
F
= 1mA, I
C
= 1mA H11B1M 1.0
AC CHARACTERISTICS
t
on
Tu r n-on Time I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
4NXXM,
TIL113M
5.0 µs
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
H11B1M 25
t
off
Tu r n-off Time
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
4N32M,
4N33M,
TIL113M
100 µs
4N29M,
4N30M
40
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
H11B1M 18
BW Bandwidth
(3, 4)
30 kHz
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M
Rev. 1.0.3 4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.) (Continued)
Isolation Characteristics
* Indicates JEDEC registered data.
Notes:
1. The current transfer ratio(I
C
/I
F
) is the ratio of the detector collector current to the LED input current.
2. Pulse test: pulse width = 300µs, duty cycle
≤
2.0% .
3. I
F
adjusted to I
C
= 2.0mA and I
C
= 0.7mA rms.
4. The frequency at which I
C
is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Characteristic Test Conditions Device Min. Typ. Max. Units
V
ISO
Input-Output Isolation Voltage
(5)
f = 60Hz, t = 1 sec. All 7500 V
AC
PEAK
VDC 4N32M* 2500 V
VDC 4N33M* 1500
R
ISO
Isolation Resistance
(5)
V
I-O
= 500VDC All 10
11
Ω
C
ISO
Isolation Capacitance
(5)
V
I-O
= Ø, f = 1MHz All 0.8 pF
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 Vpeak
VIORM Max. Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over Voltage 6000 Vpeak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, VIO = 500V 109 Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3 5
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves
Fig. 2 Normalized CTR vs. Forward Current
I
F
- FORWARD CURRENT (mA)
02468101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0V
TA = 25°CNormalized to
IF = 10 mA
Fig. 3 Normalized CTR vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
IF = 10 mA
IF = 20 mA
Normalized to
IF = 10 mA
TA = 25°C
I
F
- LED FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
Fig. 5 CTR vs. RBE (Saturated)
R
BE
- BASE RESISTANCE (k Ω)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
IF = 10 mA
IF = 5 mA
VCE= 0.3 V
Fig. 4 CTR vs. RBE (Unsaturated)
R
BE
- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE= 5.0 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
I
F
= 5 mA
I
F
= 20 mA
I
F
= 10 mA
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
- COLLECTOR CURRENT (mA)
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
F
= 2.5 mA
T
A
= 25
˚C
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3 6
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves (Continued)
NORMALIZED t
on
- (t
on(R
BE
)
/ t
on(open)
)
Fig. 8 Normalized ton vs. RBE
R
BE
- BASE RESISTANCE (k Ω)
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10 V
IC = 2 mA
RL = 100 Ω
SWITCHING SPEED - (µs)
Fig. 7 Switching Speed vs. Load Resistor
R-LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10 V
IC = 2 mA
RL = 100 Ω
NORMALIZED t
off
- (t
off(R
BE
)
/ t
off(open)
)
10 100 1000 10000 100000
R
BE
- BASE RESISTANCE (k Ω)
Fig. 9 Normalized toff vs. RBE Fig. 10 Dark Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE
(°C)
020406080100
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
V
CE
= 10 V
T
A
= 25°
C
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IF RL
RBE
VCC = 10V
OUTPUT
ton
10%
90%
toff
Figure 11. Switching Time Test Circuit and Waveforms
IC
Adjust IF to produce IC = 2 mA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3 7
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3 8
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Ordering Information
Marking Information
Suffix Example Option
No Suffix 4N32M Standard Through Hole Device (50 units per tube)
S 4N32SM Surface Mount Lead Bend
SR2 4N32SR2M Surface Mount; Tape and Reel (1,000 units per reel)
T 4N32TM 0.4" Lead Spacing
V 4N32VM VDE 0884
TV 4N32TVM VDE 0884, 0.4" Lead Spacing
SV 4N32SVM VDE 0884, Surface Mount
SR2V 4N32SR2VM VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)
4N29
V X YY Q
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3 9
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Tape Dimensions
Note:
All dimensions are in millimeters.
Reflow Soldering Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3 10
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Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I40
First Production
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler