2014-04-041
BFP196W
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
Power amplifier for DECT and PCN systems
fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP196W RIs 1 = E 2 = C 3 = E 4 = B - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC150 mA
Base current IB15
Total power dissipation1)
TS 69°C
Ptot 700 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature TSt
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 115 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP196W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 12 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 50 mA, VCE = 8 V, pulse measured
hFE 70 100 140 -
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BFP196W
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 70 mA, VCE = 8 V, f = 500 MHz
fT5 7.5 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.86 1.3 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.4 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 3.9 -
Minimum noise figure
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
NFmin
-
-
1.3
2.3
-
-
dB
Power gain, maximum available1)
IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
19
12.5
-
-
Transducer gain
IC = 50 mA, VCE = 8 V, ZS = ZL = 50,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
13
7
-
-
dB
Third order intercept point at output2)
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 0.9 GHz
IP3- 32 - dBm
1dB Compression point at output
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 0.9 GHz
P-1dB - 19 -
1Gma = |S21 / S12| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.2 MHz to 12 GHz
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BFP196W
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
100
200
300
400
500
600
mW
800
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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BFP196W
Package SOT343
2014-04-046
BFP196W
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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