TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
Publication Order Number:
TIP31C/D
© 2000 Semiconductor Components Industries, LLC.
November-2017,Rev. 2
TIP31A / TIP31C
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP32 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditi ons an d s tres si ng the parts to the se lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP31A TIP31A TO-220 3L (Single Gauge) Bulk
TIP31C TIP31C TO-220 3L (Single Gauge) Bulk
TIP31CTU TIP31C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP31A 60 V
TIP31C 100
VCEO Collector-Emitter Voltage TIP31A 60 V
TIP31C 100
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 3 A
ICP Collector Current (Pulse) 5 A
IBBase Current 1 A
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
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Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Valu es are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 40
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1) TIP31A IC = 30 mA, IB = 0 60 V
TIP31C 100
ICEO Collector Cut-Off Current TIP31A VCE = 30 V, IB = 00.3
mA
TIP31C VCE = 60 V, IB = 00.3
ICES Collector Cut-Off Current TIP31A VCE = 60 V, VEB = 0 200 μA
TIP31C VCE = 100 V, VEB = 0 200
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 1 mA
hFE DC Current Gain(1) VCE = 4 V, IC = 1 A 25
VCE = 4 V, IC = 3 A 10 50
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 3 A, IB = 375 mA 1.2 V
VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 3 A 1.8 V
fT Current Gain Bandwidth Product VCE = 10 V, IC = 500 mA,
f = 1 MHz 3.0 MHz
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
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Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
10 100
0.1
1
10
100μs
TIP31C VCEO MAX.
TIP31B VCEO MAX.
TIP31A VCEO MA X.
TIP31 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
45
50
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
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4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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