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Document Number: 67198
S11-0654-Rev. B, 11-Apr-11
Vishay Siliconix
Si1424EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V
VDS Temperature Coefficient VDS/TJID = 250 µA 18 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ- 2.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1.0 V
Gate-Source Leakage IGSS
VDS = 0 V, VGS = ± 4.5 V ± 1.5
µA
VDS = 0 V, VGS = ± 8 V ± 25
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1
VDS = 20 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS 5 V, VGS = 4.5 V 15 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 5 A 0.027 0.033
VGS = 2.5 V, ID = 1 A 0.031 0.038
VGS = 1.8 V, ID = 1 A 0.035 0.045
VGS = 1.5 V, ID = 0.5 A 0.040 0.070
Forward Transconductanceagfs VDS = 10 V, ID = 3 A 25 S
Dynamicb
Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 7.1 A 11.5 18
nC
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
69
Gate-Source Charge Qgs 0.8
Gate-Drain Charge Qgd 1.6
Gate Resistance Rgf = 1 MHz 0.46 2.3 4.6 k
Tur n - O n D e l ay Time td(on)
VDD = 10 V, RL = 1.8
ID 5.7 A, VGEN = 4.5 V, Rg = 1
0.3 0.45
µs
Rise Time tr0.6 0.9
Turn-Off DelayTime td(off) 3.8 6
Fall Time tf1.7 2.6
Tur n - O n D e l ay T im e t d(on)
VDD = 10 V, RL = 1.8
ID 5.7 A, VGEN = 10 V, Rg = 1
0.15 0.25
Rise Time tr0.3 0.45
Turn-Off DelayTime td(off) 5.6 9
Fall Time tf1.6 2.5
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 2.3 A
Pulse Diode Forward Current ISM 16
Body Diode Voltage VSD IS = 5.7 A, VGS = 0 V 0.85 1.2 V
Body Diode Reverse Recovery Time trr
IF = 5.7 A, dI/dt = 100 A/µs, TJ = 25 °C
15 30 ns
Body Diode Reverse Recovery Charge Qrr 7.5 15 nC
Reverse Recovery Fall Time ta8ns
Reverse Recovery Rise Time tb15