BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES * Silicon epitaxial planar diodes * For general purpose * AEC-Q101 qualified available * Base P/N-E3 - RoHS-compliant, commercial grade DESIGN SUPPORT TOOLS click logo to get started * Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART TYPE DIFFERENTIATION BAV19WS VR = 100 V BAV20WS VR = 150 V BAV21WS VR = 200 V ORDERING CODE BAV19WS-E3-08 or BAV19WS-E3-18 BAV19WS-HE3-08 or BAV19WS-HE3-18 BAV20WS-E3-08 or BAV20WS-E3-18 BAV20WS-HE3-08 or BAV20WS-HE3-18 BAV21WS-E3-08 or BAV21WS-E3-18 BAV21WS-HE3-08 or BAV21WS-HE3-18 TYPE MARKING CIRCUIT CONFIGURATION REMARKS A8 Single Tape and reel A9 Single Tape and reel AA Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Continuous reverse voltage Repetitive peak reverse voltage Forward continuous current (1) Rectified current (average) half wave rectification with resistive load (1) Repetitive peak forward current (1) Surge forward current Power dissipation PART BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS f 50 Hz, = 180 t < 1 s, TJ = 25 C SYMBOL VR VR VR VRRM VRRM VRRM IF VALUE 100 150 200 120 200 250 250 UNIT V V V V V V mA IF(AV) 200 mA IFRM IFSM Ptot 625 1 200 mA A mW VALUE 625 450 150 -65 to +150 -55 to +150 UNIT K/W K/W C C C Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Thermal resistance junction to lead Junction temperature Storage temperature range Operating temperature range TEST CONDITION SYMBOL RthJA RthJL Tj Tstg Top Rev. 2.2, 12-Jul-17 Document Number: 85726 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL IF = 100 mA Forward voltage IF = 200 mA TYP. UNIT 1 V VF 1.25 V IR 100 nA VR = 100 V, TJ = 100 C BAV19WS IR 15 A VR = 150 V BAV20WS IR 100 nA VR = 150 V, TJ = 100 C BAV20WS IR 15 A VR = 200 V BAV21WS IR 100 nA VR = 200 V, TJ = 100 C BAV21WS IR 15 A Dynamic forward resistance IF = 10 mA rf VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr 50 ns Diode capacitance Reverse recovery time MIN. BAV19WS VR = 100 V Reverse leakage current MAX. VF 5 I F - Forward Current (mA) 1000 Tj = 100 C 100 10 25 C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 VF - Forward Voltage (V) 18858 0.2 DC current IF Current (rectif.) I O 0.1 0 18859 60 90 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (C) 120 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature rf - Dynamic Forward Resistance () I O , I F - Admissible Forward Current (A) 0.3 30 250 18864 Fig. 1 - Forward Current vs. Forward Voltage 0 Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 10 1 1 150 Tamb - Ambient Temperature (C) Fig. 2 - Admissible Forward Current vs. Ambient Temperature 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 2.2, 12-Jul-17 Document Number: 85726 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors 100 10 Reverse Voltage BAV19WS VR = 100 V BAV20WS VR = 150 V BAV21WS VR = 200 V 1 0.1 0 40 80 120 160 Tj - Junction Temperature (C) 18862_3 2.0 1.8 CD - Diode Capacitance (pF) IR(Tj)/IR (25 C) - Leakage Current 1000 T j = 25 C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 200 1 Fig. 5 - Leakage Current vs. Junction Temperature 10 100 VR - Reverse Voltage (V) 18863 Fig. 6 - Capacitance vs. Reverse Voltage 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0 - 8 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 2.2, 12-Jul-17 Document Number: 85726 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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