BAV19WS-HE3-18 - Vishay Semiconductors

BAV19WS, BAV20WS, BAV21WS

www.vishay.com Vishay Semiconductors

Rev. 2.2, 12-Jul-17 1Document Number: 85726

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Switching Diodes, High Voltage

DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes / options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diodes

• For general purpose

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101

qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

(1) Valid provided that leads are kept at ambient temperature

Available

Models

PARTS TABLE

PART TYPE

DIFFERENTIATION ORDERING CODE TYPE MARKING CIRCUIT

CONFIGURATION REMARKS

BAV19WS VR = 100 V BAV19WS-E3-08 or BAV19WS-E3-18

BAV19WS-HE3-08 or BAV19WS-HE3-18 A8 Single Tape and reel

BAV20WS VR = 150 V BAV20WS-E3-08 or BAV20WS-E3-18

BAV20WS-HE3-08 or BAV20WS-HE3-18 A9 Single Tape and reel

BAV21WS VR = 200 V BAV21WS-E3-08 or BAV21WS-E3-18

BAV21WS-HE3-08 or BAV21WS-HE3-18 AA Single Tape and reel

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Continuous reverse voltage

BAV19WS VR100 V

BAV20WS VR150 V

BAV21WS VR200 V

Repetitive peak reverse voltage

BAV19WS VRRM 120 V

BAV20WS VRRM 200 V

BAV21WS VRRM 250 V

Forward continuous current (1) IF250 mA

Rectified current (average) half wave

rectification with resistive load (1) IF(AV) 200 mA

Repetitive peak forward current (1) f ≥ 50 Hz, θ = 180° IFRM 625 mA

Surge forward current t < 1 s, TJ = 25 °C IFSM 1A

Power dissipation Ptot 200 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air RthJA 625 K/W

Thermal resistance junction to lead RthJL 450 K/W

Junction temperature Tj150 °C

Storage temperature range Tstg -65 to +150 °C

Operating temperature range Top -55 to +150 °C

BAV19WS, BAV20WS, BAV21WS

www.vishay.com Vishay Semiconductors

Rev. 2.2, 12-Jul-17 2Document Number: 85726

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Admissible Forward Current vs. Ambient Temperature

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Dynamic Forward Resistance vs. Forward Current

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 100 mA VF1V

IF = 200 mA VF1.25 V

Reverse leakage current

VR = 100 V BAV19WS IR100 nA

VR = 100 V, TJ = 100 °C BAV19WS IR15 μA

VR = 150 V BAV20WS IR100 nA

VR = 150 V, TJ = 100 °C BAV20WS IR15 μA

VR = 200 V BAV21WS IR100 nA

VR = 200 V, TJ = 100 °C BAV21WS IR15 μA

Dynamic forward resistance IF = 10 mA rf5Ω

Diode capacitance VR = 0, f = 1 MHz CD1.5 pF

Reverse recovery time IF = 30 mA, IR = 30 mA,

iR = 3 mA, RL = 100 Ωtrr 50 ns

18858

1000

100

0.1

0.01

I - Forward Current (mA)

0 0.4 0.6 0.8 10.2

- Forward Voltage (V)

Tj = 100 °C

25 °C

0.1

0.2

0.3

0 30 60 90 120 150

18859

amb

- Ambient Temperature (°C)

I , I - Admissible Forward Current (A)

ICurrent (rectif.) O

DC current IF

200

18864

Tamb - Ambient Temperature (°C)

250

200

150

100

20 40 60 80 100 120 140 160 1800

P - Admissible Power Dissipation (mW)

tot

r - Dynamic Forward Resistance

f(Ω)

100

1 10010

18861 IF- Forward Current (mA)

BAV19WS, BAV20WS, BAV21WS

www.vishay.com Vishay Semiconductors

Rev. 2.2, 12-Jul-17 3Document Number: 85726

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-323

0.1

18862_3

100

1000

0 40 80 120 160 200

)/I

(25 °C) - Leakage Current

- Junction Temperature (°C)

Reverse Voltage

BAV19WS V

= 100 V

BAV20WS V

= 150 V

BAV21WS V

= 200 V

18863

1100.1

0.8

0.6

0.4

1.4

1.2

1.0

0.2

100

C - Diode Capacitance (pF)

VR- Reverse Voltage (V)

2.0

1.8

1.6

=25

°CTj

Rev. 6 - Date: 23.Sept.2016

17443

Document no.: S8-V-3910.02-001 (4)

Created - Date: 24.August.2004

Footprint recommendation:

0.6 [0.024]

1.1 [0.043]

1.5 [0.059]

2.50 [0.098]

2.85 [0.112]

1.60 [0.063]

1.95 [0.077]

0° - 8°

0.25 [0.010]

0.40 [0.016]

Cathode bar

0.20 [0.008]

0.40 [0.016]

0.8 [0.031]

0.2 [0.008]

1.15 [0.045]

0.10 [0.004]

0.1 [0.004] max.

0.15 [0.006]

1.6 [0.063]

0.8 [0.031] 0.8 [0.031]

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Revision: 08-Feb-17 1Document Number: 91000

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BAV19WS-V-GS08 BAV19WS-V-GS18 BAV20WS-V-GS08 BAV20WS-V-GS18 BAV21WS-V-GS08 BAV21WS-V-

GS18 BAV21WS-E3-08 BAV21WS-HE3-18 BAV20WS-HE3-08 BAV21WS-G3-18 BAV19WS-G3-08 BAV19WS-E3-

18 BAV20WS-E3-08 BAV21WS-G3-08 BAV21WS-HE3-08 BAV20WS-HE3-18 BAV20WS-G3-18 BAV19WS-G3-18

BAV19WS-HE3-18 BAV19WS-E3-08 BAV21WS-E3-18 BAV19WS-HE3-08 BAV20WS-E3-18 BAV20WS-G3-08