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1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015 Product data sheet
Table 1. Product overview
Type number Package Package
configuration Configuration
NXP JEITA JEDEC
BAV756S SOT363 SC-88 -very small quadruple common
anode/common cathode
BAW56 SOT23 -TO-236AB small dual common anode
BAW56M SOT883 SC-101 -leadless ultra
small dual common anode
BAW56S SOT363 SC-88 -very small quadruple common
anode/common anode
BAW56T SOT416 SC-75 -ultra small dual common anode
BAW56W SOT323 SC-70 -very small dual common anode
High switching speed: trr 4 ns Low capacitance: Cd 2 pF
Low leakage current Reverse voltage: VR 90 V
Small SMD plastic packages AEC-Q101 qualified
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IRreverse current VR = 80 V - - 0.5 A
VRreverse voltage - - 90 V
trr reverse recovery time [1] - - 4 ns
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 2 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
BAV756S
1anode (diode 1)
2cathode (diode 2)
3common anode (diode 2 and
diode 3)
4cathode (diode 3)
5anode (diode 4)
6common cathode (diode 1
and diode 4)
BAW56; BAW5 6T; BAW56W
1cathode (diode 1)
2cathode (diode 2)
3common anode
BAW56M
1cathode (diode 1)
2cathode (diode 2)
3common anode
BAW56S
1cathode (diode 1)
2cathode (diode 2)
3common anode (diode 3 and
diode 4)
4cathode (diode 3)
5cathode (diode 4)
6common anode (diode 1 and
diode 2)
132
4
56
006aab103
13
6
2
54
006aaa144
12
3
006aab099
12
3
3
1
2
Transparent
top view
006aab099
12
3
132
4
56
006aab102
13
6
2
54
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Product data sheet Rev. 6 — 18 March 2015 3 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Tabl e 4. Ordering i nformation
Type number Package
Name Description Version
BAV756S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56 -plastic surface-mounted package; 3 leads SOT23
BAW56M SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm SOT883
BAW56S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56T SC-75 plastic surface-mounted package; 3 leads SOT416
BAW56W SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codes
Type number Marking code[1]
BAV756S A7*
BAW56 A1*
BAW56M S5
BAW56S A1*
BAW56T A1
BAW56W A1*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage -90 V
VRreverse voltage -90 V
IFforward current
BAV756S Ts = 60 C - 250 mA
BAW56 Tamb 25 C - 215 mA
BAW56M Tamb 25 C - 150 mA
BAW56S Ts = 60 C - 250 mA
BAW56T Ts = 90 C - 150 mA
BAW56W Tamb 25 C - 150 mA
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 4 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
[1] Tj = 25 C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded.
6. Thermal characteristics
IFRM repetitive peak forward
current -500 mA
IFSM non-repetitive peak forward
current square wave [1]
tp = 1 s - 4 A
tp = 1 ms - 1 A
tp = 1 s - 0.5 A
Ptot total power dissipation [2]
BAV756S Ts = 60 C - 350 mW
BAW56 Tamb 25 C - 250 mW
BAW56M Tamb 25 C[3] -250 mW
BAW56S Ts = 60 C - 350 mW
BAW56T Ts = 90 C[4] -170 mW
BAW56W Tamb 25 C - 200 mW
Per device
IFforward current
BAV756S Ts = 60 C - 100 mA
BAW56 Tamb 25 C - 125 mA
BAW56M Tamb 25 C - 75 mA
BAW56S Ts = 60 C - 100 mA
BAW56T Ts = 90 C - 75 mA
BAW56W Tamb 25 C - 130 mA
Tjjunction temperature -150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
Rth(j-a) thermal resistance from
junction to ambient in free air [1]
BAW56 --500 K/W
BAW56M [2] --500 K/W
BAW56W --625 K/W
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 5 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
[1] Pulse test: tp 300 s; 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
Rth(j-sp) thermal resistance from
junction to solder point
BAV756S --255 K/W
BAW56 --360 K/W
BAW56S --255 K/W
BAW56T --350 K/W
BAW56W --300 K/W
Table 7. Thermal characteris tics …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Characteristics
Tamb = 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage [1]
IF = 1 mA --715 mV
IF = 10 mA --855 mV
IF = 50 mA - - 1 V
IF = 150 mA --1.25 V
IRreverse current VR = 25 V - - 30 nA
VR = 80 V - - 0.5 A
VR = 25 V; Tj = 150 C--30 A
VR = 80 V; Tj = 150 C--150 A
Cddiode capacitance VR = 0 V; f = 1 MHz --2pF
trr reverse recovery time [2] --4ns
VFR forward recovery voltage [3] --1.75 V
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 6 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Based on square wave currents.
Tj = 25 C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. No n-repetitive peak forwa rd current as a
function of pulse duration; maximum values
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
f = 1 MHz; Tamb = 25 C
Fig 3. Reverse current as a function of reverse
voltage; typical values Fig 4. Dio de ca pacitance as a function of reverse
voltage; typical values
006aab109
VF (V)
0.2 1.41.00.6
1
10
102
103
IF
(mA)
10−1
(1) (2) (3) (4)
mbg704
10
1
102
IFSM
(A)
10−1
tp (μs)
110
4
103
10 102
006aab110
10−2
10−4
10−3
10
1
10−1
102
IR
(μA)
10−5
VR (V)
0 1008040 6020
(1)
(2)
(3)
(4)
025
VR (V)
2.5
0
0.5
mbh191
1.0
1.5
2.0
5
Cd
(pF)
10 15 20
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 7 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Re verse recovery time test circuit and wav eforms
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005
Fig 6. F orward recovery voltage test circuit and waveforms
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga882
VFR
t
output signal
V
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 8 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
9. Package outline
Fig 7. Package outline BAW56 (SOT23/TO-236AB) Fig 8. Package outlin e BAW56M (SOT883/SC-101)
Fig 9. Package outline BAV756S and
BAW56S (SOT363/SC-88) F ig 10. Package outline BAW56T (SOT416/SC-75)
Fig 11. Package outline BAW56W (SOT323/SC-70)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
03-04-03Dimensions in mm
0.62
0.55
0.55
0.47 0.50
0.46
0.65
0.20
0.12
3
21
0.30
0.22
0.30
0.22
1.02
0.95
0.35
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
14-10-03Dimensions in mm
04-11-04Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45 0.9
0.7
0.25
0.10
1
0.30
0.15
12
30.45
0.15
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0 1.35
1.15
1.3
0.4
0.3 0.25
0.10
12
3
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 9 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
11. Soldering
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3 000 10 000
BAV756S SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm t ape and reel; T2 [3] -125 -165
BAW56 SOT23 4 mm pitch, 8 mm tape and reel -215 -235
BAW56M SOT883 2 mm pitch, 8 mm tape and reel --315
BAW56S SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm t ape and reel; T2 [3] -125 -165
BAW56T SOT416 4 mm pitch, 8 mm tape and reel -115 -135
BAW56W SOT323 4 mm pitch, 8 mm tape and reel -115 -135
Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 10 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
Fig 13. Wave soldering footprint BA W56 (SOT23/TO-236AB)
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101)
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot883_fr
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2×)
0.4
(2×)
0.25
(2×)
R0.05 (12×)
0.7
Dimensions in mm
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 11 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88)
Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88)
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 6 — 18 March 2015 12 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75)
Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70)
Fig 19. Wave soldering footprint BA W56W (SOT323/SC-70)
solder resist occupied area
solder lands solder pasteDimensions in mm
msa438
2.0
0.6
(3x)
0.7
1.5
1
2
3
1.1
2.2
0.5
(3x)
0.85
0.6
1.9
msa429
0.852.35
0.55
(3×)
1.3250.75
2.40
2.65
1.30
3
2
1
0.60
(3×)
0.50
(3×)1.90
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
msa419
4.00
4.60
2.103.65
1.15
2.70
3
2
1
0.90
(2×)
preferred transport direction during soldering
solder lands
solder resist
occupied area
Dimensions in mm
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Product data sheet Rev. 6 — 18 March 2015 13 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID Release date Data she et status Change notice Supersedes
BAV756S_BAW56_SER
v.6 20150318 Product data sheet -BAV756S_BAW56_SER_
5
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
BAV756S_BAW56_SER_5 20071126 Product data sheet -BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
BAV756S_2 19971021 Product specification -BAV756S_1
BAW56_4 20030325 Product speci fication -BAW56_3
BAW56S_2 19971021 Product speci fication -BAW56S_1
BAW56T_2 19971219 Prod uct specification - -
BAW56W_4 19990511 Product specification -BAW56W_3
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Product data sheet Rev. 6 — 18 March 2015 14 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict wit h the short data sheet, the
full data sheet shall pre va il.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an information
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In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, lif e-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and t her efo re su ch inclu si on a nd/or use is at the cu stome r's own
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semicondu ctors products , and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for t he customer’s applications and
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
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agreement shall apply. NXP Semiconductors hereby expressly object s to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
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Product data sheet Rev. 6 — 18 March 2015 15 of 16
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to : salesaddresses@nxp.com
NXP Semiconductors BAV756S; BAW56 series
High-speed switching diodes
© NXP Semiconductors N.V. 2 015. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 March 2015
Document identifier: BAV7 56 S_B AW 56 _SE R
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
13 Legal information . . . . . . . . . . . . . . . . . . . . . . . 14
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
14 Contact information. . . . . . . . . . . . . . . . . . . . . 15
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16