BC636-16-T/R - NXP - Datasheet.Technology

DATA SH EET

Product speciﬁcation

Supersedes data of 2001 Oct 10 2004 Oct 11

DISCRETE SEMICONDUCTORS

BC636; BC638; BC640

PNP medium power transistors

ook, halfpage

M3D186

2004 Oct 11 2

Philips Semiconductors Product speciﬁcation

PNP medium power transistors BC636; BC638; BC640

FEATURES

•High current (max. 1 A)

•Low voltage (max. 80 V).

APPLICATIONS

•Audio and video amplifiers.

DESCRIPTION

PNP medium power transistor in a TO-92; SOT54 plastic

package. NPN complements: BC635, BC637 and BC639.

PINNING

PIN DESCRIPTION

1 base

2 collector

3 emitter

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

handbook, halfpage

MAM285

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC636 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54

BC638

BC640

2004 Oct 11 3

Philips Semiconductors Product speciﬁcation

PNP medium power transistors BC636; BC638; BC640

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC636 −−45 V

BC638 −−60 V

BC640 −−100 V

VCEO collector-emitter voltage open base

BC636 −−45 V

BC638 −−60 V

BC640 −−80 V

VEBO emitter-base voltage open collector −−5V

ICcollector current (DC) −−1A

ICM peak collector current −−1.5 A

IBM peak base current −−200 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −0.83 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 150 K/W

2004 Oct 11 4

Philips Semiconductors Product speciﬁcation

PNP medium power transistors BC636; BC638; BC640

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current VCB =−30 V; IE=0 A −−100 nA

VCB =−30 V; IE= 0 A; Tj= 150 °C−−10 µA

IEBO emitter-base cut-off current VEB =−5 V; IC=0 A −−100 nA

hFE DC current gain VCE =−2 V; see Fig.2

IC=−5mA 63 −

IC=−150 mA 63 250

IC=−500 mA 40 −

DC current gain VCE =−2 V; IC=−150 mA; see Fig.2

BC636-10 63 160

BC636-16; BC638-16; BC640-16 100 250

VCEsat collector-emitter saturation voltage IC=−500 mA; IB=−50 mA −−0.5 V

VBE base-emitter voltage VCE =−2 V; IC=−500 mA −−1V

fTtransition frequency VCE =−5V;I

C=−50 mA; f = 100 MHz 100 −MHz

DC current gain ratio of the

complementary pairs VCE=2V;IC= 150 mA −1.6

hFE1

hFE2

-----------

Fig.2 DC current gain; typical values.

handbook, full pagewidth

160

120

MBH730

−10−1

hFE

−1IC (mA)

−10 −103−104

−102

VCE = −2 V

2004 Oct 11 5

Philips Semiconductors Product speciﬁcation

PNP medium power transistors BC636; BC638; BC640

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 97-02-28

04-06-28

A L

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

2004 Oct 11 6

Philips Semiconductors Product speciﬁcation

PNP medium power transistors BC636; BC638; BC640

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no license or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a world wide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands R75/05/pp7 Date of release: 2004 Oct 11 Document order number: 9397 750 13575