Dual Schottky Barrier Rectifiers
* Dual rectifier construction, positive center tap
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ta =25°C unless otherwise specified.)
SYMBOL MBRF1535CT MBRF1545CT MBRF1550CT MBRF1560CT
UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 35 45 50 60 V
Maximum Working peak reverse voltage VRMS 35 45 50 60 V
Maximum DC Blocking Voltage VDC 35 45 50 60 V
15 (Tatal Device)
7.5 (Per Leg)
Peak repetitive forward current at TC = 105°C A
(rated VR, 20 KHz sq. wave)
Maximum Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at Tc = 100°C
Maximum Instantaneous Forward Voltage per Leg
at IF = 7.5A, Tc =25 °C VF-0.75 V
IF = 7.5A,Tc = 125°C 0.57 0.65
IF = 15A,Tc = 25°C 0.84 -
IF = 15A, Tc = 125°C 0.72 -
Maximum Reverse Current per Leg Tc = 25°C IR0.1 1.0 mA
at Rated DC Blocking Voltage Tc = 125°C IR(H) 15 50 mA
Maximum Thermal Resistance, Junction to Case RθJC 5.0 °C/W
Operating Junction Temperature Range TJ - 65 to + 150 °C
Storage and Temperature Range TSTG - 65 to + 175 °C
Page 1 of 2 Rev. 02 : March 25, 2005
A
RATING
IFSM 150
Maximum Average Forward Current, Tc = 105°C IF(AV) A
IFRM 15
0.110(2.8)
0.098(2.5)
0.055(1.4)Max.
0.543(13.8)
0.512(13.2)
ITO-220AB
Dimensions in inches and ( millimeters )
0.100(2.55)
0.124(3.16)Max.
0.272(6.9)
0.248(6.3)
0.161(4.1)Max.
0.603(15.5)
0.573(14.8)
0.185(4.70)Max.
0.035(0.9)Max.
0.406(10.3)MAX.
0.134(3.4)DIA.
0.113(3.0)DIA.
0.112(2.85)
0.100(2.55)
0.030(0.76)Max.
2 31
PIN 1 PIN 3
PIN 2