TA0640L thru TA3500L
FEATURES
Oxide Gla ss Passi vate d Junct io n
Bidirectional protection in a s ingle device
Surge capabilities up to 30A @ 10/1000us or 150A
@ 8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded pl astic
Polarity : Denotes none cathode band
Weig ht : 0.003 ounces, 0. 093 grams
SURFA CE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM -
58 to 320
Volts
IPP -
30
Amperes
MAXIMUM RATINGS
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
THERM AL RESISTANCE
℃
/W
UNIT
SYMBOL
%/
℃
Juncti on to leads
CHARACTERISTICS
Typical positiv e temperature coefficient for brekdown voltage
Rth
(J-L)
△
V
BR
/
△
T
J
0.1
VALUE
30
120
Junction to ambient on print circuit (on recommended pad layout)
Rth
(J-A)
℃
/W
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Par t 68
ITU-T K20/21
FCC Par t 68
GR-1089-CORE
I
PP
(A)
200
150
100
60
50
30
I
PP
, PEAK PULSE CURRENT (%)
100
50
0tr tp
TIME
Half value
Peak value (Ipp)
tr= ri se ti m e to p ea k val ue
tp= Decay time to half v a lue
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
℃
Non-repetitive peak impulse current @ 10/1000us
CHARACTERISTICS
storage tem perature range
I
PP
I
TSM
T
STG
A
A
-55 to +150
VALUE
30
15
Non-repetitive peak On-state current @ 8. 3ms (one half cycle)
Juncti on temperatur e range
T
J
-40 to +150
℃
REV. 0, 03-Dec-2001, KSWA02
SMA
All Dimensions i n millim ete r
SMA
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
2.92 2.29
1.27 1.63
0.31 0.15
4.83 5.59
0.05 0.20
2.01 2.62
0.76 1.52
HE
B
A
C
F
GD
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Holding current Note: 1
I
H
V
T
I
PP
C
O
On state voltage
Peak pulse current
Off state capacitance Note: 2
Breakover current V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
V
I
NOTES: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the T
SPD
Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
RMS
signal; VR=2V
DC
bias.
TA0640L
TA0720L
75
58
65
TA0900L
TA1100L
TA1300L
TA1500L
TA1800L
TA2300L
TA2600L
TA3100L
TA3500L
140
90
120
220
160
190
275
320
5
5
5
5
5
5
5
5
5
5
5
98
77
88
180
130
160
300
220
265
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
150
150
150
150
150
150
150
150
150
150
150
100
100
100
60
60
60
40
60
40
40
40
50
50
50
50
50
50
50
50
50
50
50
Max
PARAMETER
SYMBOL
UNITS
LIMIT
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ V
DRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ I
T
=1.0A
HOLDING
CURRENT OFF-STATE
CAPACITANCE
Max Max Max Min Max Min Typ
V
DRM
I
DRM
V
BO
V
T
I
BO
-I
BO+
I
H-
Co
Volts uA Volts Volts mA mA mA pF
ELECTRIC A L CHARA CT ERIST ICS @ TA= 25
℃
℃℃
℃
unless otherwise specified
TA064 0L thru TA3 500L
BREAKOVER
CURRENT
800
800
800
800
800
800
800
800
800
800
800
Max
I
H+
mA
800
800
800
800
800
800
800
800
800
800
800
REV. 0, 03-Dec-2001, KSWA02
FI G .1 - OFF STATE CU RRENT vs J UNCT I ON T EM PERATU RE
I(
DRM)
, OFF STATE CURRENT (uA)
T
J
, JUNCTION TEMPERATURE (
℃
)
VDRM=50V
100
10
1.0
0.1
0.001
0.01
-25 025 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMALIZED B R EAKDOWN VOLTAGE
1.20
1.10
1.05
1.0
0.90
0.95
1.15
VBR (TJ)
VBR (TJ=25
℃
)
100 175
FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE
vs JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMA LIZED BREA KOVE R VO LTAGE
1.10
1.05
1.0
0.95 100 175
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE
vs JUNCTION TEMPERATURE
V (T); ON STATE VOLTAGE
I
(T)
, ON ST ATE CURRENT
FIG. 4 - ON STATE CURRENT vs ON STATE VOLT AGE
T
J
, JUNCTION TEMPERATURE (
℃
)
NORMALIZED HOLDING CURRENT
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT
vs JUNCTION TEMP ERATURE
VR, REVERSE VOLTAGE
NORMALIZE CAPACITANCE
FIG. 6 - RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAG E BIAS
RATING AND CHARACT ERISTICS CURVES
TA064 0L thru TA3 500L
-50 -25 0 25 50 75 100 125
0
0.5
1
1.5
2
1 10 100
0.1
1
Tj =25
℃
f=1MHz
VRMS = 1V
CO(VR)
CO(VR = 1V )
IH (TJ)
IH (TJ=25
℃
)
VBO (TJ)
VBO (TJ=25
℃
)
123456789
1
10
100
T
J
= 25
℃
RE V . 0 , 03 -Dec -200 1, KSWA02
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
TELECOM
EQUIPMENT
E.G. MODEM
FUSE
TSPD 1
RING
TIP
TELECOM
EQUIPMENT
E.G. LINE
CARD
RING
TIP
TSPD 2
TSPD 3
PTC
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 1
RING
TIP
TSPD 2
PTC
PTC
TYPICAL CIRCUIT APPLICATIONS
TA064 0L thru TA3 500L
REV. 0, 0 3 -Dec -2001, K SWA0 2
