LITE-ON SEMICONDUCTOR TA0640L thru TA3500L Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 30 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @ 10/1000us or 150A @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 SMA SMA A C B MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.003 ounces, 0.093 grams G H F D E DIM. MIN. MAX. A 4.06 4.57 B 2.29 2.92 C 1.27 1.63 D 0.15 0.31 E 4.83 5.59 F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS SYMBOL VALUE UNIT Non-repetitive peak impulse current @ 10/1000us IPP 30 A Non-repetitive peak On-state current @ 8.3ms (one half cycle) ITSM 15 A Junction temperature range TJ -40 to +150 storage temperature range TSTG -55 to +150 SYMBOL VALUE UNIT Junction to leads Rth(J-L) 30 /W Junction to ambient on print circuit (on recommended pad layout) Rth(J-A) 120 /W VBR/TJ 0.1 %/ THERMAL RESISTANCE CHARACTERISTICS Typical positive temperature coefficient for brekdown voltage WAVEFORM STANDARD IPP (A) 2/10 us GR-1089-CORE 200 8/20 us IEC 61000-4-5 150 10/160 us FCC Part 68 100 10/700 us ITU-T K20/21 60 10/560 us FCC Part 68 50 10/1000 us GR-1089-CORE 30 IPP, PEAK PULSE CURRENT (%) MAXIMUM RATED SURGE WAVEFORM 100 Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value Half value 50 0 tr tp TIME REV. 0, 03-Dec-2001, KSWA02 ELECTRICAL CHARACTERISTICS @ TA= 25 unless otherwise specified TA0640L thru TA3500L PARAMETER RATED REPETITIVE OFF-STATE VOLTAGE OFF-STATE LEAKAGE CURRENT @ VDRM BREAKOVER VOLTAGE ON-STATE VOLTAGE @ IT=1.0A SYMBOL VDRM IDRM VBO UNITS Volts uA LIMIT Max TA0640L BREAKOVER CURRENT HOLDING CURRENT VT IBO- IBO+ IH- IH+ Co Volts Volts mA mA mA mA pF Max Max Max Min Max Min Max Typ 58 5 77 3.5 50 800 150 800 100 TA0720L 65 5 88 3.5 50 800 150 800 100 TA0900L 75 5 98 3.5 50 800 150 800 100 TA1100L 90 5 130 3.5 50 800 150 800 60 TA1300L 120 5 160 3.5 50 800 150 800 60 TA1500L 140 5 180 3.5 50 800 150 800 60 TA1800L 160 5 220 3.5 50 800 150 800 60 TA2300L 190 5 265 3.5 50 800 150 800 40 TA2600L 220 5 300 3.5 50 800 150 800 40 TA3100L 275 5 350 3.5 50 800 150 800 40 TA3500L 320 5 400 3.5 50 800 150 800 40 SYMBOL I PARAMETER VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current IPP IBO IH IBR VBO IBO Breakover voltage IDRM V Breakover current VT IH Holding current VT On state voltage IPP Peak pulse current CO Off state capacitance OFF-STATE CAPACITANCE VBR VDRM VBO Note: 1 Note: 2 REV. 0, 03-Dec-2001, KSWA02 NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias. RATING AND CHARACTERISTICS CURVES TA0640L thru TA3500L FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 1.20 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF STATE CURRENT (uA) 100 10 1.0 VDRM=50V 0.1 0.01 0.001 -25 0 25 50 75 100 125 1.15 1.10 VBR (TJ) VBR (TJ=25) 1.05 1.0 0.95 0.90 -50 150 -25 TJ, JUNCTION TEMPERATURE () I(T), ON STATE CURRENT NORMALIZED BREAKOVER VOLTAGE 100 125 150 175 100 VBO (TJ) VBO (TJ=25) 1.0 10 TJ = 25 1 -25 0 25 50 75 100 125 150 1 175 TJ, JUNCTION TEMPERATURE () 2 3 4 5 6 7 8 9 V (T); ON STATE VOLTAGE FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS 1 NORMALIZE CAPACITANCE 2 NORMALIZED HOLDING CURRENT 75 FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE 1.10 0.95 -50 50 25 TJ, JUNCTION TEMPERATURE () FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE 1.05 0 1.5 1 IH (TJ) IH (TJ=25) 0.5 0 CO(VR) Tj =25 f=1MHz VRMS = 1V CO(VR = 1V) 0.1 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE () 100 125 1 10 100 VR, REVERSE VOLTAGE REV. 0, 03-Dec-2001, KSWA02 TYPICAL CIRCUIT APPLICATIONS TA0640L thru TA3500L FUSE RING TELECOM EQUIPMENT TSPD 1 E.G. MODEM TIP RING PTC TSPD 1 TELECOM EQUIPMENT TSPD 2 E.G. ISDN TIP PTC RING PTC TSPD 2 TELECOM EQUIPMENT TSPD 1 TSPD 3 TIP E.G. LINE CARD PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device REV. 0, 03-Dec-2001, KSWA02