TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/537
Devices
Qualified Level
2N6674 2N6675 2N6689 2N6690
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6674
2N6689 2N6675
2N6690 Unit
Collector-Emitter Voltage VCEO 300 400 Vdc
Collector-Base Voltage VCBO 450 650 Vdc
Collector-Base Voltage VCEX 450 650 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 5.0 Adc
Collector Current IC 15 Adc
2N6674
2N6675 2N6689
2N6690
Total Power Dissipation @ TA = +250C
@ TC = +250C(1) PT 6.0(2)
175 3.0(3)
175 W
W
Operating & Storage Temperature Range Top; Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 1.0 0C/W
1) Derate linearly 1.0 W/0C for TC > 250C
2) Derate linearly 34.2 mW/0C for TA > 250C
3) Derate linearly 17.1 mW/0C for TA > 250C
2N6674, 2N6675
TO-3 (TO-204AA)*
2N6689, 2N6690
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N6674, 2N6689
2N6675, 2N6690
V(BR)CEO
300
400
Vdc
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = -1.5 Vdc 2N6674, 2N6689
VCE = 650 Vdc, VBE = -1.5 Vdc 2N6675, 2N6690
ICEX
0.1
0.1
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
VEB = 7.0 Vdc IEBO
2.0 mAdc
Collector-Base Cutoff Current
VCB = 450 Vdc 2N6674, 2N6689
VCB = 650 Vdc 2N6675, 2N6690 ICBO
1.0
1.0 mAdc
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 3.0 Vdc
IC = 10 Adc; VCE = 2.0 Vdc hFE
15
8
40
20
Collector-Emitter Saturation Voltage
IC = 10 Adc; IB = 2 Adc
IC = 15 Adc; IB = 5 Adc VCE(sat)
1.0
5.0 Vdc
Base-Emitter Saturation Voltage
IC = 10 Adc; IB = 2 Adc VBE(sat) 1.5 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 5 MHz hfe 3.0 10
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 150 500 pF
SWITCHING CHARACTERISTICS
Delay Time td 0.1 µs
Rise Time tr 0.6 µs
Storage Time ts 2.5 µs
Fall Time tf 0.5 µs
Cross-Over Time
See Figure 3 of MIL-PRF-19500/537
tc 0.5 µs
SAFE OPERATING AREA
DC Tests (continuous dc)
TC = +250C, power application time = 1.0 s; 1 Cycle, (See Figure 4 of MIL-PRF-19500/537)
Test 1
VCE = 11.7 Vdc, IC = 15 Adc All Types
Test 2
VCE = 30 Vdc, IC = 5.9 Adc 2N6674, 2N6675
Test 3
VCE = 100 Vdc, IC = 0.25 Adc All Types
Test 4
VCE = 25 Vdc, IC = 7.0 Adc 2N6689, 2N6690
Test 5
VCE = 300 Vdc, IC = 20 mAdc 2N6674, 2N6689
VCE = 400 Vdc, IC = 10 mAdc 2N6675, 2N6690
Clamped Switching
TA = 250C; VCC = 15 Vdc; Load condition B; RBB1 = 5 Ω; RBB2 = 1.5 Ω;
VBB2 = 5 Vdc; L = 50 µH; R of inductor = .05Ω; RL = R of inductor. (See Figure 6 of MIL-PRF-19500/537)
Clamp Voltage = 350; IC = 10 Adc 2N6674, 2N6689
Clamp Voltage = 450; IC = 10 Adc 2N6675, 2N6690
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
