MIL-PRF-19500/301F
16 February, 2002
SUPERSEDING
MIL-PRF-19500/301E
4 October 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER
TYPE 2N918 AND 2N918UB
JAN, JANTX, JANTXV AND JANS, JANHC and JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for NPN, silicon, ultra-high frequency transistors.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of
product assurance are provided for unencapsulated devices.
1.2 Physical dimensions. See figure 1 (TO - 72), figure 2 for UB and figure 3 (JANHC and JANKC).
1.3 Maximum ratings.
Types
PT 1/
TA = +25°C
VCBO
VCEO
VEBO
IC
TSTG and TJ
mW
V dc
V dc
V dc
mA dc
°C
2N918
2N918UB
200
200
30
30
15
15
3.0
3.0
50
50
-65 to +200
1
/ Derate linearly, 1.14 mW/°C above TA= 25°C
1.4 Primary electrical characteristics at TA = +25°C.
Limit
|hFE|
VCE = 10 V dc
IC = 4 mA dc
f = 100 MHz
rb' Cc
VCB = 10 V dc
IE = -4.0 mA dc
f = 79.8 MHz
Cobo
VCB = 10 V dc
IE = 0 mA dc
100 kHz f1 MHz
NF
VCE = 6 V dc
IC = 1 mA dc
f = 60 MHz
gs = 2.5 mmho
Gpe
VCB = 12 V dc
IC = 6.0 mA dc
f = 200 MHz
ps
pF
DB
dB
Minimum 6.0 15
Maximum
18.0
25
1.7
6.0
AMSC N/A FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box
3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)
appearing at the end of this document or by letter.
The documentation and process conversion measures necessary to
comply with this document shall be completed by 16 May, 2002.
MIL-PRF-19500/301F
2
1.4 Primary electrical characteristics at TA = +25°C - Continued.
Limit
hFE1
VCE = 10 V dc
IC = 500 µA dc
hFE2
VCE = 1.0 V dc
IC = 3.0 mA dc
hFE3
VCB = 10 V dc
IC = 10 mA dc
Minimum
10
20
20
Maximum 200
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. W hile every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
MIL-PRF-19500/301F
3
Dimensions
Inches Millimeters
Symbol Min Max Min Max
Notes
CD .178 .195 4.52 4.95 5
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.84 5
LC .100 TP 2.54 TP 7,8
LD .016 .021 .406 .533 7,8
LL .500 .750 12.70 19.05 7,8
LU .016 .019 .41 .48
L1 .050 1 .27
L2 .250 6.35
P .100 2.54
Q .040 1.02 5
TL .028 .048 .71 1.22
TW .036 .046 .91 1.17
r .007 .18
α 45° TP
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All four leads.
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
FIGURE 1. Physical dimensions for 2N918, (T0-72).
TO-72
MIL-PRF-19500/301F
4
Dimensions
Symbo
l Inches Millimeters Note
Min Max Min Max
A .046 .056 0.97 1.42
A1 .017 .035 0.43 0.89
B1 .016 .024 0.41 0.61
B2 .016 .024 0.41 0.61
B3 .016 .024 0.41 0.61
D .085 .108 2.41 2.74
D1 .071 .079 1.81 2.01
D2 .035 .039 0.89 0.99
D3 .085 .108 2.41 2.74
E .115 .128 2.82 3.25
E3 .128 3.25
L1 .022 .038 0.56 0.96
L2 .022 .038 0.56 0.96
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions for 2N918UB, surface mount.
UB
MIL-PRF-19500/301F
5
BE
Die size--------- .016 x .016 inches, (0.406 mm X 0.406mm).
Die thickness--- .008 ± .0016 inches, (0.203 mm X 0.406mm).
Base pad-------- .0027 x .0027 inches, (0.069 mm X 0.069 mm).
Emitter pad----- .0027 x .0027 inches, (0.069 mm X 0.069 mm).
Back metal----- Gold, 6500 ± 1950 Ang
Top metal------ Aluminum, 17500 ± 2500 Ang
Back side------ Collector
Glassivation--- SiO2, 7500 ± 1500 Ang
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
MIL-PRF-19500/301F
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3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
gs............ Noise source conductance.
Po............ Oscillator, power output.
RBE.......... External resistance, base to emitter.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and figures 1, 2, and 3 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups in table I herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in ac cordance with
MIL-PRF-19500.
MIL-PRF-19500/301F
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4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The
following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
*3c
Thermal impedance, method 3131 of
MIL-STD-750.
Thermal impedance, method 3131 of
MIL-STD-750.
9
ICBO1 and hFE2
11
ICBO1 and hFE2
ICBO1 = 100 percent of initial value or
5 nA dc, whichever is greater;
hFE2 = ±15 percent.
ICBO1 and hFE2
12
See 4.3.1
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO1 = 100 percent of initial value or
5 nA dc, whichever is greater;
hFE2 = ±15 percent.
Subgroup 2 of table I herein;
ICBO1 = 100 percent of initial value or 5
nA dc, whichever is greater;
hFE2 = ±20 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
2N918, UB.........................VCB = 5 - 15 V dc, PT = 200 mW at TA = room ambient as defined in the general
requirements of paragraph 4.5 in MIL-STD-750.
NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4.3.2. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. Group A inspection shall be performed on each sublot.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and
4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2
herein. Delta measurements shall be in accordance with table II herein.
MIL-PRF-19500/301F
8
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method Conditions
B3 2037 Test condition A. All internal leads for each device shall be pulled
separately.
* B4 1037 VCB = 10 V dc, 2,000 cycles.
* B5 1027 VCB = 10 V dc; 1,000 hours maximum rated power shall be applied and
ambient temperature adjusted to achieve TJ = +150°C minimum.
N = 45, c = 0.
4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV). Separate samples may be used for each step.
In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed
assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the
failed assembly lot shall be scrapped.
Step Method Conditions
1 1027 Steady-state life: test condition B, 340 hours, VCB = 10 V dc; maximum rated power
shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum.
n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0.
2 1027 The steady-state life test of step 1 shall be extended to 1,000 hours for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B, step 2 shall not be required more than once for any single
wafer lot. n = 45, c = 0.
3 1032 High temperature life (non-operating), t = 340 hours; TA = +200°C. n = 22,
c = 0. “
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each
inspection lot. See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX and
JANTXV) may be pulled prior to the application of final lead finish. “
MIL-PRF-19500/301F
9
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with group A, subgroup 2 and table II herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method Conditions
C2 2036 Test condition E., not applicable to UB.
C6 1026 VCB = 10 V dc, 1,000 hours; maximum rated power shall be applied and ambient
temperature adjusted to achieve TJ = +150°C minimum. N = 45 devices, c = 0.
For small lots, n = 12 devices, c = 0.
4.4.3.2. Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E; not applicable for UB devices.
C6 Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. In case
qualification was awarded to a prior revision of the associated specification that did not request the performance of
table III herein must be performed to maintain qualification.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750 except
that the output capacitor shall be omitted.
4.5.2 Disposition of case lead during electrical measurements. Unless otherwise specified all electrical
measurements and operating life test shall be performed with the case lead connected to the emitter.
4.5.3 Noise figure. The noise figure shall be measured using commercially available test equipment and its
associated standard test procedures (see figure 4).
4.5.4 Collector-base time constant. This parameter may be determined by applying an rf signal voltage of 1.0 volt
(rms) across the collector-base terminals, and measuring the ac voltage drop (Veb) with a high-impedance rf
voltmeter across the emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following
computation applies:
rb' Cc: (psec) = 2 x Veb (millivolts)
MIL-PRF-19500/301F
10
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
examination 3/ 2071 n = 45 devices, c = 0
Solderability 3/ 4/
Resistance to solvents
3/ 4/ 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051 Test condition C, 25 cycles.
n = 2 devices, c = 0
Heremetic seal 4/ 1071 n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 4/
Group A, subgroup 2
Bond strength 3/ 4/
2037 Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage, collector
to base
3036
Bias condition D, VCBO= 30V
ICBO2
1
µA dc
Breakdown voltage, collector
to emitter
3011
Bias condition D, IC = 3.0 mA dc
V(BR)CEO
15
V dc
Breakdown voltage, emitter to
base
3061
Bias condition D, VEB= 3V
IEBO2
10
µA dc
Collector to base cutoff
current
3036
Bias condition D, VCB = 25 V dc
ICBO1
10
nA dc
Emitter to base cutoff current
3061
Bias condition D, VEB = 2. 5 V dc
IEBO1
10
nA dc
Forward-current t ransfer ratio
3076
VCE = 10 V dc; IC = 500 µA dc;
hFE1
10
Forward-current t ransfer ratio
3076
VCE = 1.0 V dc; I C = 3.0 mA dc;
hFE2
20
200
Forward-current t ransfer ratio
3076
VCE = 10 V dc; IC = 10 mA dc;
hFE3
20
Collector to emitt er volt age
(saturated)
3071
IC = 10 mA dc; IB = 1.0 mA dc;
VCE(sat)
0.4
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 10 mA dc;
IB = 1.0 mA dc
VBE(sat)
1.0
V dc
See footnotes at end of table.
MIL-PRF-19500/301F
11
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
High temperature
operation
3036
TA = +150°C
Collector to base cutoff
current
Bias condition D, VCB = 25 V dc
ICBO2
1.0
µA dc
Low-temperature
operation
3076
TA = -55°C
VCE = 1.0 V dc; I C = 3.0 mA dc
hFE4
10
Forward-current t ransfer
ratio
3306
VCE = 10 V dc; IC = 4. 0 mA dc; f = 100 MHz
|hFE|
6.0
18
Noise figure
VCE = 6 V dc; IC = 1.0 mA dc; f = 60 MHz; gs
= 2.5 mmho (see 4.5.2, 4.5.3, and figure 4)
NF
6.0
dB
Small-signal power gain
3256
VCB = 12 V dc; IC = 6. 0 mA dc;
f = 200 MHz; (see figure 5)
Gpe
15
dB
Collector-base time
constant
VCB = 10 V dc; IE = -4.0 mA dc;
f = 79.8 MHz (see 4. 5.2 and 4.5.4)
rb' Cc
25
ps
Oscillator power output
VCB = 15 V dc; IC = 8. 0 mA dc; f = 500 MHz
(see figure 6)
Po
30
mW
Collector efficiency
VCB = 15 V dc; IC = 8.0 mA dc; f = 500 MHz
(see figure 6)
η
25
%
Subgroup 5
Not applicable
1/ For sampling plan (unless otherwise specified see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
MIL-PRF-19500/301F
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TABLE II. Groups B and C delta electrical measurements. 1/ 2/ 3/
Step
Inspection
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
1.
Collector-base
cutoff current
3036
Bias condition D; VCB = 25 V dc
ICBO1 3/
100 percent of initial
value or 5 nA dc,
whichever is greater.
2.
Forward-current
transfer ratio
3076
VCE = 1.0 V dc; IC = 3.0 mA dc
hFE2 3/
± 25 percent change
from initial reading
3.
Collector-emitter
voltage (saturated)
3071
IC = 10 mA dc; IB = 1.0 mA dc
VCE(sat) 3/
± 50 mV dc change from
previously measured
value.
1/ The delta electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table II herein, step 3.
b. Subgroup 5, see table II herein, steps 1, 2 and 3.
2/ The delta electrical measurements for table VII of MIL-PRF-19500 are as follows: subgroup 6, see table II herein,
steps 1, 2 and 3 for JANS level.
3/ Devices which exceed the group A limits for this test shall not be acceptable.”
*TABLE III. Group E inspection (all quality levels) – for qualification only.
Inspection
MIL-STD-750 Qualification
Method Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051 Test condition C, 500 cycles.
Hermetric seal
1071
Fine leak
Gross leak
Electrical measurements
See group A, subgroup 2 and table II herein.
Subgroup 2
45 devices
c = 0
Intermitt ent life 1037 Intermittent operation life: VCB = 10 V dc;
6,000 cycles.
Electrical measurements
See group A, subgroup 2 and table II herein.
Subgroup 3, 4, 5, 6, and 7
Not applicable
Subgroup 8
Reverse stability
1033
Condition A 400 V
Condition B < 400 V
45 devices
c = 0
MIL-PRF-19500/301F
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NOTES:
1. The test fixture shall consist of a 60 MHz tuned amplifier and suitable biasing circuits. It should
be constructed utilizing very high-frequency design techniques.
2. The effective source susceptance should be tuned for each device being tested to obtain
minimum noise figure.
3. The HP-343A has a 50-ohm output resistance, therefore a suitable impedance transformer
must be used to obtain an effective source conductance of 2.5 mmho at the transistor with
minimum losses.
FIGURE 4. Block diagram for noise-figure test.
MIL-PRF-19500/301F
14
NEUTRALIZATION PROCEDURE:
a. Connect a 200 MHz signal generator (with a 50 ohm output impedance) to the input terminals of the
amplifier, and connect a 50 ohm rf voltmeter to the output terminals of the amplifier.
b. Apply VEE and VCC to obtain the specified test conditions.
c. Adjust the output of the signal generator to approximately 10 millivolts and tune C1 and C3 for
maximum output.
d. Interchange the connections to the signal generator and rf voltmeter and with sufficient signal
applied at the output terminals, tune L2 for a minimum indication on the rf voltmeter.
e. Repeat this sequence until optimum settings are obtained for all variables.
CIRCUIT-COMPONENT INFORMATION:
C1: 3-12 pF
C2 and C7: 1000 pF
C3: 1.5 - 7.5 pF
C4 and C5: 0.01 µF
C6: 0.05 µF
L1: 3½ T No. 16 AWG 5/16" ID, 7/16" length, Turns ratio 2 to 1
L2: 0.4 - 0.65 µh, Miller No. 4303 (or equal)
L3: 8 T No. 16 AWG, 1/8" ID, 7/8" length, Turns ratio 8 to 1
L4: 200 MHz RFC
R1: 100
R2: 1 k
FIGURE 5. Small-signal power gain.
MIL-PRF-19500/301F
15
OSCILLATOR ADJUSTMENT PROCEDURE:
Measurement of Po shall be made in this circuit or a suitable equivalent. The circuit adjustment procedure is as
follows:
a. Set VCC and VEE to obtain the specified test conditions.
b. Adjust the stub tuner to obtain the maximum output at the specified frequency of oscillation.
c. Check IC and reset if necessary.
d. Read Po.
Note 1. Collector efficiency (η), may be determined as follows:
η in % Po X 100 Where Po is in milliwatts
120
CIRCUIT-COMPONENT INFORMATION:
C1 and C3: 1000 pF
C2: 50 pF
C4: 75 pF
R1: 2.2 k
L1 and L3: 500 mC RFC
L2: 2 turns No. 16 AWG, 3/8" OD, 1¼" length
L4: 9 turns No. 22 AWG, 3/16" OD, ½" length
Double-stub tuner consists of the following commercially available components:
2 GR Type 874 TEE (or equivalent)
1 GR Type 874-D20 Adjustable Stub (or equivalent)
1 GR Type 874-LA Adjustable Line (or equivalent)
1 GR Type 874-WN3 Short-Circuit Termination (or equivalent)
FIGURE 6. Oscillator power output.
MIL-PRF-19500/301F
16
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N918) will be identified on the QPL.
Die ordering information
PIN Manufacturer
34156
2N918
2N918
JANHCA2N918
JANKCA2N918
* 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
MIL-PRF-19500/301F
17
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 11 (Project 5961-2556)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI
Navy - AS, MC, SH
Air Force - 19, 99
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/301F 2. DOCUMENT DATE
16 February 2002
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER TYPE 2N918 and 2N918UB
JAN, JANTX, JANTXV AND JANS, JANHC and JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
b. TELEPHONE
Commercial DSN FAX EMAIL
614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99