MMBT3906-HF (PNP)
RoHS Device
General Purpose Transistor
Page 1
REV:B
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Parameter Conditions Min
Max
Unit
Electrical Characteristics (at TA=25°C unless otherwise noted)
Typ
VCEO
Emitter-Base voltage
Collector-Emitter voltage
Collector-Base voltage
Collector current-Continuous
Symbol
Parameter Min
Max
Unit
V
V
V
-5
-40
-40
IC-0.2 A
0.3 W
PC
Collector dissipatioin
+150 °C
TSTG , TJ
Storage temperature and junction temperature -55
Collector-Base breakdown voltage
-0.1
IC =-100μA , IE=0
Features
-Epitaxial planar die construction
-As complementary type, the NPN
transistor MMBT3906-HF is recommended
Dimensions in inches and (millimeter)
SOT-23
1
Base
2
Emitter
Collector
3
VCBO
VEBO
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Transition frequency
Delay time
Storage time
Rise time
Fall time
IC =-1mA , IB=0
IE =-100μA , IC=0
VCB=-40V , IE=0
VCE=-40V , IB=0
VEB=-5V , IC=0
VCE=-1V , IC=-10mA
VCE=-1V , IC=-50mA
IC=-50mA , IB=-5mA
IC=-50mA , IB=-5mA
VCE=-20V , IC=-10mA
f=100MHZ
VCC=-3.0V , VBE=-0.5V
IC=-10mA , IB1=-1.0mA
VCC=-3.0Vdc , IC=-10mA
IB1=IB2=-1.0mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
-40
-40
-5
-0.1
-0.1
300
100
60
-0.3
-0.95
250
35
35
225
75
V
V
V
µA
µA
µA
V
V
Mhz
nS
nS
nS
nS
QW-JTR01
0.071 (1.80)
1 2
3
0.119 (3.00)
0.110 (2.80)
0.100 (2.55)
0.089 (2.25)
0.020 (0.50)
0.012 (0.30)
0.056 (1.40)
0.047 (1.20)
0.041 (1.05)
0.035 (0.90)
0.079 (2.00)
0.004 (0.10) max
0.006 (0.15)
0.003 (0.08)
0.020 (0.50)
0.012 (0.30)
Halogen Free
Page 2
REV:B
QW-JTR01
RATING AND CHARACTERISTIC CURVES (MMBT3906-HF)
Page 2
Fig. 5- IC — VBE
Base - Emmiter Voltage , VBE (V)
Ta=100°C
Collector Current , Ic (mA)
DC Current Gain, hFE
-0.1 -1 -10 -100
0
100
200
300
-200
Collector Current , Ic (mA)
1-10 -100
-30
100
-10
Fig. 3- VCEsat — IC
500
100
Fig. 4- VBEsat — IC
Collector Current, Ic (mA)
1 10
-0.4
200
-0.8
-1.2
-0.0
Fig.1- Static Characteristic
COLLECTOR CURRENT, IC
(mA)
Collector-Emitter Voltage, VCE (V)
-500uA
-450uA
IB=-50uA
COMMON
EMITTER
Ta=25 ℃
-0
-20
-40
-60
-80
-90
-0 -4 -8 -12 -16 -18
-100uA
-150uA
-200uA
-250uA
-300uA
-350uA
-400uA
-450uA
-500uA
Ta=25°C
COMMON EMITTER
VCE=-1V
Fig.2- hFE— IC
300
-30
ß=10
-20
Reverse Voltage , V (V)
-0.1 -1 -10
1
Capacitance, c (pF)
Fig. 6- Cob/ — VCBCib /VEB
9
-3
F=1MHz
Ta=25°C
IE=0 / Ic=0
Cob
Cib
-0.0 -0.2 -0.6 -100
-0.4 -0.8
-0.3
-0.1
-1
-3
-10
-30
-100
Ta=100°C
Ta=25°C
Collector Current, Ic (mA) Collector-Emtter Saturation Voltage
, (mV)
VCEsat
BASE-Emitter Saturation Voltage,
, (V)
VBEsat
General Purpose Transistor
Page 3
QW-BTR02
Fig. 7- fT — IC
Transition Frequency , fT (MHZ)
Collector current, Ic (mA)
-1 -10
-50
200
600
Fig.8- PC — Ta
Ambient Temperature , Ta (°C)
Collector Power Dissipation, Pc (mW)
0 25 50 75 100 125 150
0
50
100
150
200
250
300
400
-3
VCE=-20V
Ta=25°C
-30
RATING AND CHARACTERISTIC CURVES (MMBT3906-HF)
General Purpose Transistor
REV:B
Comchip Technology CO., LTD.
Page 4
QW-JTR01
B C dD D2D1
SOT-23
SYMBOL
A
(mm)
(inch) 2.142 ± 0.016
4.00 ± 0.10
1.50 + 0.10 54.40 ± 0.40 13.00 ± 0.20
4.00 ± 0.10 2.00 ± 0.10
178 ± 1.00
0.059 0.004+7.008 ± 0.039 0.512 ± 0.008
SYMBOL
(mm)
(inch) 0. ± 0.004157 0.157 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.05
0.138 ± 0.002
SOT-23
3.15 ± 0.10
0.124 ± 0.004
2.77 ± 0.10
0.109 ± 0.004
1.22 ± 0.10
0.048 ± 0.004
9.50 ± 1.00
0.374 ± 0.039
8.00 0.30 /+–0.10
0.315 0.012 /+–0.004
General Purpose Transistor
REV:B
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Index hole
d
E
F
B W
P
P0
P1
A
Comchip Technology CO., LTD.
Page 5
QW-JTR01
Suggested PAD Layout
Part Number
MMBT3906-HF
Marking Code
2A
Marking Code
Standard Packaging
Case Type
Qty per Reel
(Pcs)
3000
SOT-23
Reel Size
(inch)
7
A
C
B
SIZE
(inch)
0.031
(mm)
0.80
1.90
2.02
0.075
0.080
SOT-23
2.82 0.111
A
B
C
D
D
2A
3
1 2
Marking
Code
X
Code Year(Even)-Month
XXX1-01
XXX1-02
XXX1-03
XXX1-04
XXX1-05
XXX1-06
XXX1-07
XXX1-08
XXX1-09
XXX1-010
XXX1-011
XXX1-012
XXX2-01
XXX2-02
XXX2-03
XXX2-04
XXX2-05
XXX2-06
XXX2-07
XXX2-08
XXX2-09
XXX2-010
XXX2-011
XXX2-012
Code
J
O
L
C
K
B
P
D
M
E
G
F
W
N
Y
T
R
H
A
I
U
X
Z
S
Code: Per A.D.
General Purpose Transistor
REV:B
Year(Even)-Month
