1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2222 2222A Unit
Collector–Emitter Voltage VCEO 30 40 Vdc
Collector–Base Voltage VCBO 60 75 Vdc
Emitter–Base Voltage VEBO 5.0 6.0 Vdc
Collector Current — Continuous IC600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222
MMBT2222A V(BR)CEO 30
40 —
—Vdc
Collector–Base Breakdown Voltage (IC = 10
m
Adc, IE = 0) MMBT2222
MMBT2222A V(BR)CBO 60
75 —
—Vdc
Emitter–Base Breakdown Voltage (IE = 10
m
Adc, IC = 0) MMBT2222
MMBT2222A V(BR)EBO 5.0
6.0 —
—Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX — 10 nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222
(VCB = 60 Vdc, IE = 0) MMBT2222A
(VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222
(VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A
ICBO —
—
—
—
0.01
0.01
10
10
µAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO — 100 nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL — 20 nAdc
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2222LT1/D
SEMICONDUCTOR TECHNICAL DATA
12
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
*Motorola Preferred Device
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) MMBT2222A only
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3) MMBT2222
MMBT2222A
hFE 35
50
75
35
100
50
30
40
—
—
—
—
300
—
—
—
—
Collector–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc) MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc) MMBT2222
MMBT2222A
VCE(sat) —
—
—
—
0.4
0.3
1.6
1.0
Vdc
Base–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc) MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc) MMBT2222
MMBT2222A
VBE(sat) —
0.6
—
—
1.3
1.2
2.6
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222
MMBT2222A
fT250
300 —
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222
MMBT2222A
Cibo —
—30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hie 2.0
0.25 8.0
1.25
kΩ
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hre —
—8.0
4.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hfe 50
75 300
375
—
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A
hoe 5.0
25 35
200
m
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A rb, Cc— 150 ps
Noise Figure
(IC = 100
m
Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222A NF — 4.0 dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
(V
CC = 30 Vdc, VBE(off) = –0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td— 10
ns
Rise Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
tr— 25
ns
Storage Time
(V
CC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts— 225
ns
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
tf— 60
ns
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. Turn–On Time Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
–2 V < 2 ns
0
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1 k
Ω
+30 V
200
CS* < 10 pF
+16 V
–14 V
0
< 20 ns
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1 k
+30 V
200
CS* < 10 pF
–4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25
°
C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0 300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
t
′
s = ts – 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150
Ω
500
µ
A, RS = 200
Ω
100
µ
A, RS = 2.0 k
Ω
50
µ
A, RS = 4.0 k
Ω
f = 1.0 kHz
IC = 50
µ
A
100
µ
A
500
µ
A
1.0 mA
4.0
6.0
8.0
10
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.00.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current–Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25
°
C
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
–0.5
0
+0.5
COEFFICIENT (mV/ C)
–1.0
–1.5
–2.5
°
R
q
VC for VCE(sat)
R
q
VB for VBE
0.1 1.0 2.0 5.0 10 20 50
0.2 0.5 100 200 500 1.0 k
1.0 V
–2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
CASE 318–08
SOT–23 (TO–236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
ISSUE AE
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MMBT2222LT1/D
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