BC859CT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 May 28

2004 Jan 16

DISCRETE SEMICONDUCTORS

BC859; BC860

PNP general purpose transistors

2004 Jan 16 2

NXP Semiconductors Product data sheet

PNP general purpose transistors BC859; BC860

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 45 V).

APPLICATIONS

•Low noise input stages of audio frequency equip ment.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

NPN complements: BC849 and BC850.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE

NUMBER MARKING

CODE(1) TYPE

NUMBER MARKING

CODE(1)

BC859B 4B* BC860B 4F*

BC859C 4C* BC860C 4G*

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM256

Top view

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC859B −plast i c sur face mounted p a ckage; 3 leads SOT23

BC859C

BC860B

BC860C

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NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC859; BC860

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed- circuit board.

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed- circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BC859 − −30 V

BC860 − −50 V

VCEO collector-emitter voltage open base

BC859 − −30 V

BC860 − −45 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −200 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

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NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC859; BC860

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Notes

1. VBEsat decreases by about −1.7 mV/K with increasing temperature.

2. VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −30 V − −1−15 nA

IE = 0; VCB = −30 V; Tj = 150 °C−−−4μA

IEBO emitter cut-off current IC = 0; VEB = −5 V −−−100 nA

hFE DC current gain IC = −2 mA; VCE = −5 V;

see Figs 2 and 3

BC859B; BC860B 220 −475

BC859C; BC860 C 420 −800

VCEsat collector-emitter saturation

voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV

IC = −100 mA; IB = −5 mA − −250 −650 mV

VBEsat base-emitt er saturatio n voltage IC = −10 mA; IB = −0.5 mA; note 1 − −700 −mV

IC = −100 mA; IB = −5 mA; note 1 − −850 −mV

VBE base-emitter vo ltage IC = −2 mA; VCE = −5 V; note 2 −600 −650 −750 mV

IC = −10 mA; VCE = −5 V; note 2 −−−820 mV

Cccollector capacitance IE = Ie = 0; VCB = −10 V; f = 1 MHz −4.5 −pF

Ceemitter cap a citance IC = Ic = 0; VEB = −500 mV; f = 1 MHz −10 −pF

fTtransition freque ncy IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz

Fnoise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ;

f = 30 Hz to 15 kHz

BC859B; BC860B;

BC859C; BC860C −−4dB

noise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

BC859B; BC860B;

BC859C; BC860C −−4dB

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NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC859; BC860

Fig.2 DC current gain; typical values.

handbook, full pagewidth

300

200

100

400 MBH727

−10−2−10−1

hFE

−1IC (mA)

−10 −103

−102

VCE = −5 V

BC859B; BC860B.

Fig.3 DC current gain; typical values.

handbook, full pagewidth

300

200

100

600

500

400

MBH728

−10−2−10−1

hFE

−1IC (mA)

−10 −103

−102

VCE = −5 V

BC859C; BC860C.

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NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC859; BC860

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

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NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC859; BC860

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have ch anged since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

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regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/05/pp8 Date of release: 2004 Jan 16 Document order number: 9397 750 12398