2N6283 - ON Semiconductor - Datasheet.Technology

Motorola Bipolar Power Transistor Device Data

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 #   !

. . . designed for general–purpose amplifier and low–frequency switching applica-

tions.

•High DC Current Gain @ IC = 10 Adc —

hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284

hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285

VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286

VCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287

•Monolithic Construction with Built–In Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

2N6282

2N6285

ÎÎÎÎ

2N6283

2N6286

ÎÎÎ

2N6284

2N6287

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

160

0.915

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ,Tstg

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.09

ÎÎÎ

C/W

*Indicates JEDEC Registered Data.

25 50 100 125 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

160

140

0 75 150

100

120

175

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N6282/D

 Motorola, Inc. 1995

DARLINGTON

20 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 80, 100 VOLTS

160 WATTS



!"





!"



*Motorola Preferred Device



CASE 1–07

TO–204AA

(TO–3)





     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 0.1 Adc, IB = 0) 2N6282, 2N6285

2N6283, 2N6286

2N6284, 2N6287

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) 2N6282, 2N6285

(VCE = 40 Vdc, IB = 0) 2N6283, 2N6286

(VCE = 50 Vdc, IB = 0) 2N6284, 2N6287

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

0.5

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc)

(IC = 20 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

750

100

ÎÎÎÎ

18,000

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 40 mAdc)

(IC = 20 Adc, IB = 200 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 10 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common Emitter Small–Signal Short–Circuit

Forward Current Transfer Ratio

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

|hfe|

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6282,83,84

2N6285,86,87

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

400

600

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

300

ÎÎÎÎ

—

ÎÎÎ

—

*Indicates JEDEC Registered Data.

(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%

Figure 2. Switching Times Test Circuit

0.2

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

7.0

2.0

1.0

0.7

0.5

0.1 0.3 0.7 3.0 20

0.2

1.0 5.0

0.3

3.0

5.0

0.5 2.0 7.0

VCC

– 30 V

SCOPE

TUT

+ 4.0 V

tr, tf

10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPE e.g.,

1N5825 USED ABOVE IB

[

100 mA

MSD6100 USED BELOW IB

[

100 mA

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

APPROX

+ 8.0 V

APPROX

– 12 V

[

8.0 k

[

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

td @ VBE(off) = 0 V

2N6282/84 (NPN)

2N6285/87 (PNP)

VCC = 30 Vdc

IC/IB = 250

IB1 = IB2

TJ = 25

     

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

JC(t) = r(t) R

JC = 1.09

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.3 3.0 30 300

ACTIVE–REGION SAFE OPERATING AREA

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25

SINGLE PULSE

Figure 5. 2N6282, 2N6285

2.0

0.05 50 100

TJ = 200

0.2

5.0

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.1

2.0 5.0 20

5.0 ms

1.0 ms

0.5 ms

Figure 6. 2N6283, 2N6286

2.0

0.05 50 100

0.2

5.0

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.1

2.0 5.0 2010

Figure 7. 2N6284, 2N6287

2.0

0.05 50 100

0.2

5.0

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.1

2.0 5.0 2010

0.1 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25

SINGLE PULSE

TJ = 200

5.0 ms

1.0 ms

0.5 ms 0.1 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25

SINGLE PULSE

TJ = 200

5.0 ms

1.0 ms

0.5 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor

must not be subjected to greater dissipation than the curves indicate.

The data of Figures 5, 6 and 7 is based on TJ(pk) = 200

C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) < 200

C. TJ(pk) may be calculated from the data in Figure 4. At high case

temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by

second breakdown.

10,000

1.0

Figure 8. Small–Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

100

5000

hFE, SMALL–SIGNAL CURRENT GAIN

200

500

2000

1000

TJ = 25

VCE = 3.0 Vdc

IC = 10 A

1000

0.1

Figure 9. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100 1.0 2.0 5.0 20 10010

C, CAPACITANCE (PF)

500

300

200

Cib

Cob

500.2 0.5

2N6282/84 (NPN)

2N6285/87 (PNP)

TJ = 25

700

2N6282/84 (NPN)

2N6285/87 (PNP)

     

4 Motorola Bipolar Power Transistor Device Data

Figure 10. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 20

500

300

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 3.0 V

200 7.0

NPN

2N6282, 2N6283, 2N6284 PNP

2N6285, 2N6286, 2N6287

20,000

5000

10,000

3000

2000

1000

3.0 5.0 IC, COLLECTOR CURRENT (AMP)

700

500

hFE, DC CURRENT GAIN

TJ = 150

–55

300

30,000

10,000

20,000

5000

3000

1000

7000

700

VCE = 3.0 V

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

7000

2000

Figure 11. Collector Saturation Region

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0

IB, BASE CURRENT (mA)

0.5 1.0 2.0 3.0 5.0 7.0 50

2.6

2.2

1.8

1.4

IC = 5.0 A 10 A 15 A

1.0 0.7 3020 0.5 1.0 2.0 3.0 5.0 7.0 500.7 3020

IC = 5.0 A 10 A 15 A

10 10

TJ = 25

CTJ = 25

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 12. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

TJ = 25

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5 10 0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

VBE @ VCE = 3.0 V

     

Motorola Bipolar Power Transistor Device Data

+5.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 1.0 2.0 3.0 5.0 7.0 20

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+4.0

+3.0

+1.0

–4.0

–1.0

–2.0

–3.0

–5.0

VB for VBE

VC for VCE(sat)

–55

C to + 25

C to 150

C to + 150

0.5 0.7

+5.0

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+4.0

+3.0

+1.0

–4.0

–1.0

–2.0

–3.0

–5.0

VB for VBE

VC for VCE(sat)

NPN

2N6282, 2N6283, 2N6284 PNP

2N6285, 2N6286, 2N6287

*APPLIES FOR IC/IB

≤

hFE @ VCE

3.0 V

250

–55

C to + 25

*APPLIES FOR IC/IB

≤

hFE @ VCE

3.0 V

250

–55

C to + 25

C to 150

C to + 150

–55

C to + 25

10 0.2 0.3 1.0 2.0 3.0 5.0 7.0 200.5 0.7 10

+2.0 +2.0

REVERSE FORWARD

105

Figure 14. Collector Cut–Off Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT ( A)

10–1 –0.2 –0.40+0.2+0.4+0.6

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

103

104

–0.6 –0.8 –1.0 –1.2 –1.4

103

VBE, BASE–EMITTER VOLTAGE (VOLTS)

100

10–1

10–2

, COLLECTOR CURRENT ( A)

10–3

101

102

+0.2 +0.40–0.2–0.4–0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

VCE = 30 V

TJ = 150

100

Figure 15. Darlington Schematic

NPN

2N6282

2N6283

2N6284

PNP

2N6285

2N6286

2N6287

BASE

COLLECTOR

EMITTER

[

8.0 k

[

BASE

COLLECTOR

EMITTER

[

8.0 k

[

     

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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2N6282/D

*2N6282/D*

◊