VHF 55 VHO 55 VKO 55 VKF 55 Single Phase Rectifier Bridge IdAV = 53 A VRRM = 800-1600 V Preliminary data VRSM VDSM VRRM VDRM V V 800 1200 1400 1600 800 1200 1400 1600 Type xxx 55-08io7 xxx 55-12io7 xxx 55-14io7 xxx 55-16io7 xxx = type VHF 55 VHO 55 VKF 55 Symbol Test Conditions IdAV IdAVM IFRMS, ITRMS TK = 85C, module module per leg IFSM, ITSM TVJ = 45C; VR = 0 V I2t (di/dt)cr (dv/dt)cr VKO 55 Maximum Ratings 53 53 41 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A TVJ = 45C VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2s A2s TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A2s A2s 150 A/s 500 A/s 1000 V/s TVJ = 125C repetitive, IT = 50 A f = 50 Hz, tP = 200 s VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/2 * IdAV diG/dt = 0.3 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 2500 3000 V~ V~ tp = 30 s tp = 500 s tp = 10 ms PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * Small and light weight Dimensions in mm (1 mm = 0.0394") VRGM PGM Features * Package with copper base plate * Isolation voltage 3000 V~ * Planar passivated chips * Low forward voltage drop * 1/4" fast-on power terminals 5 15 % 44 15 % 110 Nm lb.in. g Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 20070731a 1-2 VHF 55 VHO 55 VKO 55 VKF 55 Symbol Test Conditions ID, IR TVJ = TVJM; VR = VRRM; VD = VDRM 5 VT IT 1.64 V VT0 rT For power-loss calculations only 0.85 11 V m VGT VD = 6 V; IGT VD = 6 V; 1.5 1.6 100 200 V V mA mA VGD IGD TVJ = TVJM; 0.2 5 V mA IL TVJ = 25C; tP = 10 s IG = 0.45 A; diG/dt = 0.45 A/s 450 mA IH TVJ = 25C; VD = 6 V; RGK = 200 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/s 2 s tq TVJ = TVJM; IT = 20 A, tP = 200 s; di/dt = -10 A/s typ. VR = 100 V; dv/dt = 15 V/s; VD = 2/3 VDRM 250 s RthJC per thyristor / Diode; DC per module per thyristor / Diode; DC per module 0.9 0.18 1.1 0.22 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Max. allowable acceleration 16.1 7.1 50 mm mm m/s2 RthJK dS dA a Characteristic Values = 80 A; TVJ = 25C TVJ = TVJ = TVJ = TVJ = 25C -40C 25C -40C VD = 2/3 VDRM IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved mA 20070731a 2-2