MJ10015 & MJ10016
T−NPN, Si, Darlington
w/Base−Emitter Speedup Diode
TO−3 Type Package
Description:
The MJ10015 and MJ10016 are Darlington transistors in a TO3 type package designed for high−
voltage, high−speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line operated switch−mode applications.
Applications:
DContinuous Collector Current (IC = 50A)
DSwitching Regulators
DInverters
DSolenoid and Relay Drivers
DMotor Controls
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEV
MJ10015 600V......................................................................
MJ10016 700V......................................................................
Collector−Emitter Voltage, VCEO(SUS)
MJ10015 400V......................................................................
MJ10016 500V......................................................................
Emitter−Base Voltage, VEBO 8.0V........................................................
Collector Current
Continuous, IC50A...............................................................
Peak, ICM 75A...................................................................
Base Current, IB10A...................................................................
Total Power Dissipation, PD
TC = +25C 250W................................................................
TC = +100C 143W...............................................................
Derate Above +25C 1.43W/C........................................................
Operating Junction Temperature Range, Tj−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.7C/W.....................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Off Characteristics
Collector−Emitter Sustaining Voltage
MJ10015 VCEO(SUS) IC = 100mA, IB = 0, VCLAMP = Rated VCEO 400 − − V
MJ10016 500 − − V
Collector Cutoff Current ICEV VCEV = Rated Value, VBE(OFF) = 1.5V − − 0.25 mA
Emitter Cutoff Current IEBO VEB = 2.0V, Ic = 0 − − 350 mA
Rev. 3−16
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
On Characteristics (Note 1)
DC Current Gain hFE Ic = 20A, VCE = 5.0V 25 − −
Ic = 40A, VCE = 5.0V 10 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 20A, IB = 1.0A − − 2.2 V
IC = 50A, IB = 10A − − 5.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 1.0A − − 2.75 V
Diode Forward Voltage VFIF = 20A − − 5.0 V
Dynamic Characteristics
Output Capacitance Cob VCB = 10V, IE = 0, f = 100kHz − − 750 pF
Switching Characteristics
Delay Time tdVCC = 250V, IC = 20A, IB1 = 1.0A,
VBE(off) = 5V, tp = 25s, Duty Cycle 2%
− − 0.3 us
Rise Time tr− − 1.0 us
Storage Time ts− − 2.5 us
Fall Time tf− − 1.0 us
Note 1. Pulse Test: Pulse width = 300s, Duty Cycle 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.060 (1.52).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
B
C
E
50 8
